electrical bias 中文意思是什麼

electrical bias 解釋
電偏置
  • electrical : adj. 1. 電力的，電動的，發電的；電氣科學的。2. 令人激動的，緊張的，驚人的。adv. -ly ,-ness n.
  • bias : n 1 成見，先入之見，偏執，偏見 （opp Impartiality ）; 傾向，嗜好；癖 （towards）。2 （衣服等上面...
  1. Simox soi wafers produced by ion implant processes were used in this experiment. the results for simox soi samples we got here revealed that all the three structures are valuable for soi electrical characterization and sis structure has irrefragable advantage over the other two structures. the soi transistors have been the key devices for achieving the low voltage operation and low power consumption, because of the small junction capacitance, the small s - factor, and the small substrate bias effect

    這三種模型分別是：第一，將傳統的mos電容結構應用到soi材料上來進行c - v ， i - v測試，分析計算soi材料的重要電學性能參數；第二種，針對soi材料的特殊結構，為了適應生產線上對無損soi園片進行電學性能測試的要求，應用mosos結構來對soi材料進行電學性能表徵。
  2. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  3. Two kinds of nonlinear conduction behavior for polymer based conducting composites can be : one is the irreversibly electrical nonlinearity taking place in extreme conditions owing to application of high voltage or current ; the other one is reversibly electrical nonlinearity occurring in moderate conditions due to application of small bias or current

    摘要導電填料復合材料的非線性導電行為可分為兩大類，即在高壓或強電流作用下發生不可逆非線性導電行為，以及在低壓或弱電流作用下的宏觀可逆非線性導電行為。
  4. An hfo2 layer with less than 3. 5nm eot was obtained and show good electrical properties. the gate leakage current at a gate voltage bias of iv is less than 10 - 7 a / cm2

    研究顯示，濺射氛圍中增加氧分壓和在氧氣氛退火有助於減小hfo _ 2柵介質的漏電流。
  5. In this thesis two reverse - bias electrical stress methods were used to investigate the reliability of the devices. one is a typical of oc stress method with collector open and reverse - bias emitter - base junction. another one, a new technique, is fc stress method with forward - bias collector - base junction and reverse - bias emitter - base junction

    本論文採用兩種反偏電應力方法考察器件的可靠性，一種為傳統的oc應力（集電極開路，發射結反向偏置）方法，另一種為新的方法fc應力（集電結正向偏置，發射結反向偏置）方法。
  6. In charter iii, the author designed a set of direct current bias and a schematics for measuring signal, by which the character of conduction of the laser plasma in electrical field caused by bias was studied

    第三章中本文作者自己設計了一套直流偏壓裝置及信號測量裝置及方案，從激光等離子體在偏壓電場作用下的導通特性測量，研究了偏壓對激光等離子體空間膨脹過程的影響機理。
  7. A new method of accurate electrical characterization of semiconductor diodes at forward bias

    一種精確檢測半導體二極體正向電特性的新方法
  8. Applying the opposite voltage bias to widen the tunneling gap and raise the electrical resistance would reopen the switch

    施加反向電壓以增大穿隧間隙，提高電阻，可以重新將開關斷開。
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