electrochemical etching 中文意思是什麼

electrochemical etching 解釋
電化浸蝕
  • electrochemical : action
  • etching : n. 1. 蝕刻法；蝕刻（銅）版畫；蝕鏤術。2. 蝕刻畫，蝕刻版，蝕刻版印刷品。
  1. The silicon plates are formed reverse four wimble array in koh solution by wet - etching technology. then the electrochemical etching experiments are done in three poles electrobath. and some technology questions such as heat oxygenation, light etching, wet etching and electrochemical etching have been analyzed. at the same time sample appearances are analyzed by scanning electron microscope. according to current burst model theory, the electrochemical deep holes etching mechanism are analyzed

    在三極電解槽中，進行了電化學深刻蝕的探索性實驗。對氧化、光刻、濕法刻蝕和電化學刻蝕中的工藝問題進行了初步的理論和實驗研究，同時，採用sem對實驗樣品進行了形貌分析，並採用電流突破模型對電化學深孔刻蝕機理進行了理論分析。
  2. Circulating device is needed in electrochemical etching course. the consequences are benefit to silicon electrochemical micromachining technology and the technology will be hopeful to become an new technology about silicon deep - holes etching technology

    其結果對進一步開展這方面的研究工作具有指導意義，在進一步深入開展研究電化學體硅微加工技術時，可有望成為實現硅深孔列陣加工的新技術。
  3. In the third chapter porous silicon was prepared by pulsed and dc electrochemical etching methods under the equivalent etching condition

    第三章研究了用脈沖電化學腐蝕制備均勻發光多孔硅。
  4. A large number of attempt and painstaking experiment have been done in this paper according to existing project. we also do lots of chemical and electrochemical etching research in material of lab6, and find out three kind of methods to produce the field emitting cold cathode including reactive ion etching ( rie ) with oxygen, wet process etching and electrochemical etching. through produce some field emitting cold cathode single tip including lab6 field emitting cold cathode, molybdenum field emitting cold cathode, tungsten field emitting cold cathode, tungsten rhenium field emitting cold cathode, molybdenum covered with lab6 film field emitting cold cathode

    而且，目前可借鑒的參考文獻較少，圍繞著前人做過的方案，本文做了大量工作，在已有文獻介紹的基礎上，結合原有的理論和實踐基礎，摸索出了包括高溫氧作用反應離子（ rie ）刻蝕法、濕法腐蝕法和電化學腐蝕法在內的三種制備工藝，運用電化學腐蝕工藝成功制備了單尖的六硼化鑭場發射冷陰極尖錐、鉬場發射冷陰極尖錐、鎢場發射冷陰極尖錐、鎢錸合金場發射冷陰極尖錐以及有六硼化鑭薄膜覆蓋的鉬場發射冷陰極尖錐。
  5. Aluminum products with shing uniform surface was prepared by electrochemical graining process, including alkaline cleaning, 1 % naoh etching, electrochemical roughing in hcl, naoh treating and anodizing in 5 % h2so4 etc

    摘要研究了鋁材無掛灰電化學砂化處理工藝。以鹽酸作為電解液的主成分，控制合適的電流密度和電解時間等工藝參數，通過6步處理，得到砂化均勻、粗糙度適中及光亮的砂面。
  6. Electrical appliance industry : the production of electrochemical capacitor ( erosion of aluminum film ) ; transportation of electrolyte in the production of dry cells and storage cells ; etching of circuit boards ; transportation of high purity chemical liquids in the production of semiconductors

    金屬工業：氧化鋁膜處理設備；線材拉伸、鋼鐵軋制中除油及酸洗；車輛噴漆前除油及酸洗處理；氧化鈦、稀土元素的生產等。
  7. ( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels

    胡勁松河北師死大學碩士學位論文（ 3 ）利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜，並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料，考察了這種納米級硅陽極的儲鉀性能和充放電過程，分析了材料結構對其儲理行為的影響；另一方面，利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素，考察了鉀點綴對多孔硅自身結構，及至性質所帶來的影響，提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。
  8. The sem and the pl observation showed that the surface of porous silicon prepared by pulsed etching was more uniform and the si particles were smaller. the intensity of pl formed by pulsed etching method was enhanced and the peak had blue shift comparing that formed by dc electrochemical etching method. at the same time, it was observed that the smaller the dimension of the porous silicon, the broader energy gap of the porous silicon

    採用脈沖和直流電化學腐蝕兩種方法制備多孔硅，對這兩種方法制備的多孔硅樣品進行掃描電鏡和熒光光譜的測量，發現脈沖腐蝕制備的多孔硅樣品比直流腐蝕制備的多孔硅樣品表面均勻、顆粒尺寸小、發光強度大，而且發光峰位有明顯的藍移現象。
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