electron beam process 中文意思是什麼

electron beam process 解釋
電子束熔煉法
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • beam : n 1 梁，棟梁，桁條；（船的）橫梁。2 船幅；（動物、人的）體幅。3 （秤）桿，杠桿，（織機的）卷軸，...
  • process : n 1 進行，經過；過程，歷程；作用。 2 處置，方法，步驟；加工處理，工藝程序，工序；製作法。3 【攝影...
  1. Aiming at the process questions of electron beam welding of aluminous sheet

    本項目研究的系統與工藝已獲得國家實用新型專利。
  2. Process specification for electron beam welding

    電子束焊接工藝規范
  3. In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient

    本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。
  4. In this paper, radiation curing and photo curing are compared. the fundamental process of electron beam ( eb ) curing is elaborated, and the features of eb cured composites are discussed. furthermore, the development of eb cured composites technology is summarized, which includes the selection of the resins suitable for eb curing, photoinitiators, active diluents and the curing mechanism. finally, a kind of low - energy eb curing technology is introduced and some innovative resins are exploited

    對輻射固化與光固化進行了比較，闡述了電子束輻射固化的基本過程，並對電子束固化復合材料的技術特點進行了概述.此外，還詳細總結了電子束固化復合材料技術的發展狀況，包括可電子束固化的樹脂體系，輻敏劑以及活性稀釋劑的選擇和應用，固化機理的研究.最後，還對復合材料的低能電子束固化技術以及新型樹脂體系的探索進行了總結
  5. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  6. This thesis will introduce a new terahertz source which based on vacuum electronics, transmission characteristics of the high frequency system and the process of interaction between electron beam and the high frequency traveling - wave have been researched, which offers basic technology for further deep development of terahertz source technology basd on vacuum electronics in our country

    本文將介紹一種基於真空電子學的新型太赫茲輻射源器件，對其線路特性進行研究以及高頻系統中注波互作用過程進行數值模擬計算，為國內真空電子學太赫茲源的研究奠定了一定的技術基礎。
  7. Electron beam process and laser beam process for material treatment ; terms for processes and equipment

    材料處理用電子束工藝及激光工藝.工藝和設備的術語
  8. Problems of track planning and process planning for electron beam welding are studied deeply and systematically in this paper

    本論文以汽車鋁合金薄板零件的電子束焊裝過程的軌跡規劃與工藝規劃為主要研究內容，對其進行了較為深入系統的研究。
  9. The application and features of vaccum strip coating processes such a thermal jet evaporation, magnetron sputtering, electron - beam evaporation and plasma enhanced eb evaporation process were reviewed

    摘要介紹了新一代連續帶鋼鍍膜技術真空鍍膜的工藝特點及應用現狀。
  10. The researches of vacuum electron beam self - material brazing specimen find that element interdiffusions are strongly occurred in interface and some new phases are precipitated during welding. the interdiffusion process is likely approached to nb atoms diffusing into stainless steel side according to the analysis of the morphology and eds of the interdiffused layer

    Tem分析發現， 1300退火形中國原子能科學研究院碩士學位論文成的擴散層中有大量的針狀析出相產生，經sadp測定為乙一（ nb ， ni ）相，而基體相為（ ni ， cr ， nb ， c ） fe一。
  11. On a video display unit, the process of changing the direction of the electron beam and thus its position on a display surface

    在視頻顯示設備上，改變電子束的方向並且從而改變了它在顯示屏幕上的位置的過程。
  12. The 30mev linac can be used as energy recovery accelerator with photo - cathode rf - gun injector. and multi - cavities photo - cathode injector can not only improve the quality of output electron beam, but also decrease the effect of phase question in the energy recovery process

    當注入器束流電子能量接近10mev后，第一加速段與束線中產生的減速相位與加速相位的差是小的，對能量回收效率的影響可以忽略。
  13. In this paper, an ingot of niobium - niobium silicide based in - situ composites ( rmics ) was prepared by arc melting process, and nb - nb3si / nb5si3 in - situ composites with a uniformly orientated microstructure were produced in a high temperature gradient directional solidification apparatus named electron beam floating zone melting ( ebfzm ). the relationships between the processing parameters and the characteristics of the solidified microstructure have been investigated. the influence of the microstructure on the mechanical properties has been revealed and the rupture mechanism at room temperature has been discussed

    本文採用真空電弧自耗熔煉法制備了鈮?硅基rmics材料的母合金錠，並採用電子束區熔（ ebfzm ）高溫度梯度定向凝固裝置制備了定向效果良好的nb - nb _ 3si nb _ 5si _ 3共晶自生復合材料，並對其定向凝固工藝參數和組織之間的對應規律、組織特性進行了研究，探討了凝固組織對室溫力學性能的影響及其斷裂機制。
  14. The experimental results show that the quality of zno films prepared by electron beam evaporation can be greatly improved by means of two - step annealing of metallic zn films in oxygen ambient, and it is feasible to fabricate high quality mgxzn1 - xo alloy films with mgo buffer layers by using thermal evaporation technique following by two - step annealing process. this method gives a new path to prepare mgxzn1 - xo alloy films

    實驗結果表明利用電子束蒸發技術制備的zno薄膜材料，在經過氧氣氣氛下的二次退火處理后，能夠表現出較好的發光和結構特性；以mgo薄膜作為緩沖層制備出了高質量的mgzno合金薄膜材料，這為開展mgzno合金薄膜材料的研究開辟了新的途徑。
  15. The synthesis of a single - crystal, ultra - long, uniform lead oxide nanowires were observed in a high vacuum chamber with the electron beam bombard in the tb doped pt thin films derived from sol - gel process

    在高真空環境中用高能量電子束對pt t薄膜進行蒸發這種全新的方法，制備出直徑在6 60nxn之間、長徑比高達100的筆直pbo單晶納米線。
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