electron holes 中文意思是什麼
electron holes
解釋
電子空穴-
The silicon plates are formed reverse four wimble array in koh solution by wet - etching technology. then the electrochemical etching experiments are done in three poles electrobath. and some technology questions such as heat oxygenation, light etching, wet etching and electrochemical etching have been analyzed. at the same time sample appearances are analyzed by scanning electron microscope. according to current burst model theory, the electrochemical deep holes etching mechanism are analyzed
在三極電解槽中，進行了電化學深刻蝕的探索性實驗。對氧化、光刻、濕法刻蝕和電化學刻蝕中的工藝問題進行了初步的理論和實驗研究，同時，採用sem對實驗樣品進行了形貌分析，並採用電流突破模型對電化學深孔刻蝕機理進行了理論分析。 -
Analysis results of histogram statistics and section electron microscopic scan technique, are that fracture feature of the cracks of the hbbb is similar and the crack is multi - source strain fatigue one. internal defects of the cast, such as impurities, gas holes, etc, are the main causes for early cracks. the contrast analysis of static strength, model and transient respond on three structures with fem proves that geometrical stress concentration in partial area has influence on early crack, also
利用直方圖等統計方法和電鏡掃描技術對該抱軸箱體裂紋分析的結果是：抱軸箱體的裂紋斷口特徵相近，裂紋性質屬于多源性低周疲勞裂紋，鑄件中的夾雜、氣孔等內部缺陷是導致過早裂損的主要原因；利用有限元法對該抱軸箱體三種結構的靜強度、模態和動態響應對比分析，證實了局部幾何性應力集中對過早裂損也有一定影響。 -
The electron gun and coil inside the display will produce temperature, therefore are ventilate holes to dispel the heat on left and right sides and the above of the chassis. please try to prevent the dust from invading. too many dusts will cover electronic part and influence the heat dissipation, which will reduce the life - time of the spare parts
顯示器因電子槍及線圈連續運作而會產生溫度，所以在機殼的左右及上面都會有透氣孔散熱，應盡量避免灰塵侵入，因為過多的灰塵覆蓋在電子零件上，會影響散熱效果，降低零組件的壽命。 -
According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily
本文針對光催化技術應用中存在的tio _ 2光催化量子效率低，吸收利用太陽能光譜范圍有限，催化劑回收困難等問題，通過窄禁帶半導體cds （ e = 2 . 5ev ）的復合，對納米tio _ 2進行了改性研究，一方面，由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍，另一方面，由於能帶的交疊，提高了光生電子和空穴的分離效率，從而提高了薄膜的光催化降解效率。 -
Passivation on the surface of nanocrystalline zno was responsible for an energy potential high enough to prevent surface states trapping the electrons or holes photogenerated, it should block the pathway to form the luminescence centers as the vo * * and [ vo *, electron ] or [ vo * *, two electrons ] complex. a new visible luminescence mechanism was presented
納米氧化鋅（ zno ）表面的鈍化實際上是在氧化鋅（ zno ）的核和表面之間形成了大的勢壘阻止表面缺陷捕獲光生電子或光生空穴形成發光中心vo * *和[ vo * ， electron ]或[ vo * * ， twoelectrons ]復合體，同時，提出了一種新的可見發光機制，很好地解釋了實驗中觀察到的現象。
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