electron irradiation 中文意思是什麼

electron irradiation 解釋
電子輻射
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • irradiation : n. 1. 照耀；發光。2. 闡明，啟發。3. 【物理學】光滲，照光，輻照。4. 【醫學】照射。5. 擴散。
  1. Dosimetry in electron and bremsstrahlung irradiation facilities for food processing, practice for

    食品加工用電子和韌致輻射輻照裝置中劑量測定的實施規程
  2. Practice for dosimetry in electron and bremsstrahlung irradiation facilities for food processing

    食品加工用電子輻射和韌性輻射設備的輻射劑量測定的實施規程
  3. Fundamental of laser 40ar / 39ar dating method : our laboratory has successfully set up the laser microprobe 40ar / 39ar geological dating method. our works include adjustment of the high - gain electron multiplier in mass spectrometer and correction of mass discrimination, adjustment of the laser, test for absorption ability of minerals to laser, designing and manufacturing high - vacuum sample chamber, sample preparation and irradiation, research on the variability of j values on the surface of rock chips, measuring atmospheric argon, determination and correction of blanks and ages, etc. the laser microprobe technique is particularly effective for some geological samples. it can be used, for example, for research of distribution of the components in extremely small samples that are very difficult to be separated and purified and those which contain excess argon

    本文首先從常規~ （ 40 ） ar ~ （ 39 ） ar階段升溫定年實驗室的改進入手，進而建立了激光~ （ 40 ） ar ~ （ 39 ） ar定年實驗室，利用這兩種先進同位素地質定年方法，結合其他手段，對青藏高原腹地和北緣的阿爾金斷裂系多期地質事件進行了詳細的同位素年代學研究：一、參照國際先進實驗室的流程，對我們的常規~ （ 40 ） ar ~ （ 39 ） ar階段升溫實驗室在樣品的預處理、樣品的照射條件和系統空白測量及校正等方面進行了改進，使之產出的同位素年代數據更可靠並為國際同行所承認。
  4. Physical design of irradiation box on a 300kv electron accelerator

    電子簾加速器輻照箱屏蔽物理設計
  5. The total number of defects induced by electron irradiation in 4h - sic is calculated theoretically. the deep level defect of eh6 / eh7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps

    在輻照的位移效應方面：從理論上對電子輻照在4h - sic中引入的缺陷數量和各種缺陷能級進行了計算和分析，其中只有eh6 / eh7缺陷能級在sic中起著有效的復合中心的作用。
  6. In order to reduce and compensate charge phenomena at the surface of non - conductive oxide materials under the electron irradiation, oxygen environmental scanning electron microscopy ( sem ) is offered in this thesis

    本論文提出氧環境掃描電子顯微分析方法，以減輕和補償非導電氧化物類樣品在電子束輻照作用下的表面充電現象。
  7. Calculation of protection dose at the labyrinthine outlet of electron beam irradiation apparatus

    電子束輻照裝置迷路出口處的防護劑量計算
  8. It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate

    模擬結果表明：退火過程所加柵偏壓的大小以及隧道電子效應與建立的界面態所佔比例的不同影響器件的恢復率。
  9. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  10. Two restore components were observed, corresponding to two defects, the internal and the surface. the studies on electron spin resonance ( epr ) spectra indicate that optical irradiation eliminated the dangling y - o bonds in the surface

    首次對y _ 2o _ 3納米晶電子順磁共振譜進行了研究，結果表明光輻照引起熒光增強原因與光輻照對釔的懸空鍵的消除有關。
  11. The agreement is also within the uncertainty when being compared with the alanine and cta film dosimeters made by jaeri. in addition, this dosimetry system is used to measure field and depth - dose distribution curves for 12mev electron beams, which shows it ' s suitability and practicability for electron beam irradiation

    另外，還利用該劑量體系對12mev電子束輻照場的分佈及深度劑量分佈進行了實際測量，得到了與cta和fwt60等薄膜劑量計相一致的結果，這也進一步說明該劑量體系在電子束輻照上的適用性和實用性。
  12. 3. polycrystalline lif thin films were grown by thermal evaporation on amorphous substrates. properties of broad band photo - luminescence at room temperature of active channel ( f2 and fa + ) produced by electron beam irradiation were studied

    首次用熱蒸發法在玻璃襯底上制備了多晶lif薄膜平面波導，研究了由電子束照射產生的有源（ f _ 2和f _ 3 ~ +色心）溝道的室溫寬帶光致發光特性。
  13. In this paper, such three points are studied as : a ) the angular distributions of the hot electrons emission under laser irradiation at different incidence angles and at different polarization direction, the angular distribution of the hot electrons in the different energy range, and the effects of laser prepulse on the angular distributions of the hot electrons emission ; b ) the energy distribution of the hot electrons at different directions, from the metallic targets and the dielectric targets, in the different energy range of the hot electrons, and the effects of the atomic number z on the energy distribution of hot electron generated by the metallic targets ; and c ) the energetic proton emission resulting from the interaction of the us - ui laser pulse with plasma

    本論文進行了三個方面的研究：第一，超熱電子角分佈的研究，包括不同激光入射角下超熱電子的角分佈；激光不同偏振態下超熱電子的角分佈；激光預脈沖對超熱電子角分佈的影響；不同能段的超熱電子的角分佈。第二，超熱電子能量分佈的研究，包括不同方位超熱電子的能量分佈，金屬與非金屬靶材的超熱電子的能量分佈，金屬原子序數z對超熱電子能量分佈的影響以及不同能段超熱電子的能量分佈。第三，研究了超短超強激光與固體靶相互作用所產四川大學博士學位論文生的高能質子發射和能譜。
  14. Design study on an electron linac for irradiation processing with a high capture efficiency

    高俘獲效率電子輻照加速器的設計研究
  15. It was first discovered that open - circuit voltage decay in multicrystalline silicon solar cells is smaller than that of in monocrystalline silicon solar cells through electron irradiation, which is explained from electron irradiation mechanism and the structure of multicrystalline silicon solar cells and also has not been reported

    通過對晶體硅太陽電池電子輻照，首次發現多晶硅太陽電池的開路電壓衰減小於單晶硅太陽電池，從輻照機理和多晶硅太陽電池的結構解釋了該現象。本研究未見報道。
  16. It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery

    假設隧道電子從硅進入氧化層和界面態的建立是輻射效應的恢復機理。
  17. 4 ) the results of epicuticular observed with the scanning electron microscope ( sem, kyky - 2800, china ) shows that the wax distribution could be changed by he - ne laser irradiation

    （ 4 ）採用掃描電鏡對小麥葉表面結構觀察的結果表明， he - ne激光能使uv - b輻射后小麥葉表面蠟質的分佈等級降低。
  18. Effects of electron irradiation energy on optical properties of kapton al thermal control coatings

    熱控塗層光學性能的影響
  19. Development of an auxiliary device for total electron irradiation

    全身電子線照射輔助配套裝置設計與製作
  20. Analyzes the mode of total electron irradiation and develops an auxiliary device of total electron irradiation, which can measure and count all parameter. its result is close to that of remedial kiosk. the device for total electron irradiation is practical and reasonable

    通過對全身電子線照射方式的分析，設計並自製簡易全身電子線照射輔助配套裝置，測量和計算各種參數，與全身照射治療亭治療結果近似，我們研製的全身電子線照輔助配套射裝置設計製作合理，經濟實用。
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