electron microscope technique 中文意思是什麼

electron microscope technique 解釋
電子顯微技術
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • microscope : n 顯微鏡。 a binocular microscope 雙目顯微鏡。 an electron microscope 電子顯微鏡。 a field ion em...
  • technique : n. 1. （專門）技術；（藝術上的）技巧，技能。2. 手法〈如畫法，演奏法等〉。3. 方法。
  1. All samples of the tumor tissues were observed by electron microscope. the t lymphocyte subsets and b lymphocytes were detected and counted with monoclonal antibody technique before and after the cryotherapy. results : the cured percentage of internal hemorrhoid, mixed hemorrhoid and chronic fissura ani reached 83. 5 %, 66. 8 % and 62. 4 % respectively. the clearance rate of the verruca acuminata was 100 %

    方法：取自西京醫院15年間冷凍治療肛腸區良性病變7018例，惡性病變636例，冷凍前後經電鏡觀察癌細胞變化及應用單克隆技術檢測患者t細胞亞群、 b細胞水平。
  2. The properties of thin films have been investigated with modern analysis technique, such as afm ( atom force microscopy ), sem ( scanning electron microscope ), xrd ( x - ray diffraction ) and rocking curve ( - scan ). and the properties of ybco thin film and its substrate and deposition temperature have been analysed, comparing with lao substrate ' s crystallization quality, ybco thin film properties, such as morphology and degree of grain alignment, was concluded to correlate with the crystal orientation uniform of lao substrate as revealed by xrd

    本文結合afm 、 sem研究ybco薄膜的表面形貌， xrd 、 fwhm分析薄膜的結晶情況，並結合成膜溫度和基片的質量進行一系列結構與性能的對比研究，發現laalo3 （ lao ）基片的質量對ybco薄膜的結構完整性有很大影響，不僅影響了薄膜的c軸取向性，而且影響了ybco的超導性能。
  3. A kind of novel composite photocatalysts containing tio2 and tourmaline particles, such as tourmaline / tio2 composite photocatalysts and tourmaline / [ tio2, sio2 ] composite photocalysts, were fabricated mainly by the sol - gel technique, whose microstructure, photocatalystic activities and spontaneous polarization were investigated by the scanning electron microscope ( sem ), uv - visible spectro - photometer, etc. the novel porous composite films of tourmaline / tio2 were prepared from alkoxide solutions on the surface of copper by sol - gel method

    本工作利用電氣石礦物材料的天然電極性、輻射紅外線性能和tio _ 2的光催化性能，研製以電氣石為載體， tio _ 2薄膜和[ tio _ 2 ， sio _ 2 ]復合薄膜為催化劑的新型復合催化材料。研究材料的制備技術、結構、性能及電氣石表面tio _ 2晶體生長機理、電氣石增強tio _ 2光催化效率機理。
  4. An optimized cvi - pip process has been achieved, by which the c / sic composites with 2. 1 ig / cm3 high density and uniformity are fabricated in 200 hours. the microstructure and composition of pyrolytic carbon interphase and cvi - pip silicon carbide matrix in the c / sic composites are investigated with the help of polarization microscope, scanning electron microscope, and x - ray diffraction technique, etc. the structure characteristic of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and effects of cvi - pip process on it are summarized and discussed. by growth course and feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix analyzed, a whole - course densification mechanism of lamellar - growth - pattern is proposed to explain the densification phenomenon, which makes a systematic understanding on the feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and the multiple stitching interface binding

    根據熱解碳中間相、 cvi - pip系sic基體相的組織構成與外貌特徵，通過對熱解碳中間相、 cvi - pip系sic基體相的生長過程和生長特徵進行分析，提出了基於層生長模式的緻密化過程理論，解釋了熱解碳中間相、 cvi - pip系sic基體相以及釘扎誘導結構多重界面的形成： （ 1 ）在1150下， cvi - sic亞基體相遵從「過飽和?凝聚?融合」機理沉積，以8f型? sic為主，同時還會有少量4h型? sic ，無游離si和游離c存在； （ 2 ） pip - sic亞基體相由非晶態sic以及彌散分佈的- sic微晶、 si - o - c和游離c組成； （ 3 ）熱解碳中間相與碳纖維增強相之間、 cvi - sic亞基體相之間形成滲透釘扎結構過渡界面， pip - sic亞基體相與摘要cvi一sic亞基體相之間形成誘導結構過渡界面。
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