electron secondary 中文意思是什麼

electron secondary 解釋
二次電子
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子(學)說。
  • secondary : adj 1 第二(位)的,第二次的;中級的 (opp primary)。2 副(的);從屬的;附屬的;輔助的;補充的...
  1. The performance of the static inverter has become more and more important since it is a basilic part of secondary power source in airplane which ensures the electron devices to work normally

    作為飛機二次電源重要組成部分之一的靜止變流器,是保證用電設備正常工作的基礎,其性能的重要性也越來越突出。
  2. The secondary backscattered electron current is used to modulate the intensity of an electron beam in a cathode ray tube(crt).

    二次電子或背散射電子的電流被用來調制陰極射線管(CRT)中電子束的強度。
  3. When primary electrons hit the surface of the chunnel, secondary electrons are generated, which make the electron distribution at the exit hole of the chunnel more uniform

    當初始電子碰撞絕緣壁時,會產生二次電子,而二次電子能改善電子在通道出口處的電子能量分佈的均勻性。
  4. Channel type secondary - electron multiplier

    形二次電子?倍管
  5. This project which is based on the demand of increasing the electron tube ’ s qualities totally and reducing the manufacture cost has done a large amount of investigative work as follows to improve and perfect the technologies for the important part of electron tube manufacture ? the grid surface processing : on the surface processing of the molybdenum grid, the primary purpose is to reduce thermionic emission and secondary electronic emission of the grid. by the constantly experiment and grabbling the different technology routes, we have successfully developed these new technologies on the tac and zrc electrophoresis and electroplating platinum black of the grid, and made its surface cladding quality very stable and reliable

    本課題是基於整體提高電子管的質量和降低生產成本的要求,對電子管生產中的重要部分? ?柵極的表面處理技術進行改進和完善,主要在以下方面進行了深入研究:在鉬柵極表面處理方面,主要為實現降低柵極的熱電子發射和二次電子發射,通過不同工藝路線的不斷試驗和摸索,成功開發出柵極電泳tac 、 zrc和電鍍鉑黑的新工藝,使柵極的塗覆質量穩定可靠。
  6. The fabrication parameters were preliminarily optimized. the morphology and composition of the samples of the diamond film for different b / c ratios was investigated by scanning electron micrograph ( sem ) and raman scattering spectroscopy ( raman ). the content of different levels of b dopant in the diamond film was tested by secondary ion mass spectrometry ( sims )

    闡述了摻硼金剛石膜的制備工藝,研究了摻硼金剛石膜成核和生長的影響因素,初步優化了沉積摻硼金剛石膜工藝參數,同時對摻硼金剛石膜進行了掃描分析、拉曼分析、二次離子質譜分析和電阻率測試。
  7. Ion bombardment secondary electron image

    離子轟擊二次電子象
  8. Secondary electron detector

    二次電子探測器
  9. The secondary electron effect is incorporated into the simulation, which are divided into true secondary and reflected primary electrons

    分析了次級電子發射的特性,在模擬中將次級電子近似分為真實次級電子和反射的原電子分別處理。
  10. In chapter 2, the principles of mdc for twts, refocusing and the influence of the secondary electrons are analyzed. the electron energy entering the collector is analyzed

    第二章從分析互作用后電子能量分佈入手,分析多級降壓收集極的工作原理、再聚焦原理和次級電子的影響。
  11. The qualification of multipactor and the characteristic of the angle and velocity of secondary electron were study. bring forward a improved model of multipactor and solve it by a random sample made by monte carlo, as a result, a critical curve of multipactor was gained

    提出了一個改進型的次級電子倍增研究模型,利用蒙特卡羅法生成的隨機樣本來求解這個模型,得到了工作在2 . 85ghz的介質片的次級電子倍增敏感度曲線。
  12. The theory of seea is based on the insulator ' s surface emitted secondary electrons when bombarded by electron, includes the process of electron - simulated desorption ( esd ), the process of desorption gas ionization and the process of the ion influencing the flashover

    Seea理論以絕緣子表面在電子轟擊下發射二次電子為基礎,包含了電子誘發脫附( esd ) ,和脫附氣體離子化並對閃絡過程產生影響等過程,對表面閃絡現象進行了解釋。
  13. In this paper based on the theory of the low energy electrons, the movement of the irons in the counter is analyzed. the theories of sputtering and secondary electron emission are discussed respectively. the irons " action and effect on the counter are putted forward

    本文從低能電子發射機理入手,分析了計數管內部離子運動情況,討論了離子濺射和二次電子發射,提出了離子與計數管內壁相互作用及其對計數管的影響,給出了計數管內壁表面處理模擬圖。
  14. The numerical computing methods of the equations involving the static electric - magnetic field, electronic motion in the static electric - magnetic field, and so on are detailed. the methods of the boundary disposal are introduced. the phenomenon of secondary electron emission has also been studied

    介紹了數值計算方法,包括靜電磁場的數值計算、在靜電靜磁場中電子運動軌跡的數值計算、空間電荷密度的數值計算和空間電位分佈的數值計算;介紹了邊界處理方法。
  15. Multiplication effect of the secondary emission microwave electron gun

    二次發射微波電子槍的倍增特性
  16. An electrode used in certain electron tubes to provide secondary emission

    中間極,二次發射電極一種用於一定電子管作第二次發射電極
  17. The dust charging associated with the electron beams including the secondary emission of dust can dominate the dust surface potential in the close cathode region. in this case, dust of the same size can levitate at two different positions in the cathode

    另外還發現:在考慮極板有強電子束發射和塵埃粒子本身的二次電子發射時,同一大小的塵埃粒子能夠懸浮在鞘層中兩個不同的位置。
  18. Several analysis methods such as casting slice, scanning electron microscope, porosity and permeability data, mercury injection data and density of fissures are used to study the reservoir properties of volcanic rocks in huang - yu - re area, the east sag of liaohe basin. volcanic rocks in this area are mainly composed of basalt, diabase, tuff and trachyte. the dominating type of volcanic reservoir space includes secondary solution pores and structural fissures

    通過火山巖的常規物性分析壓汞分析和裂縫密度分析,結合鑄體薄片和掃描電鏡,研究了遼河油田黃于熱地區的火山巖儲層物性特徵,認為該區火山巖儲層巖石類型主要有玄武巖輝綠巖凝灰巖和粗面巖,主要儲集空間類型為次生的構造裂縫和溶蝕孔縫。
  19. A new model for the growth stage of surface flashover has been developed according to the experimental results, which is based on the solid band theory. it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization, the other is the micro - discharge caused by the trap centers of insulator. the trap cente

    電子倍增的過程與材料的表面態直接相關,材料微觀結構的變化和材料的表面處理都能夠導致材料表面態的變化,引起材料的表面二次電子發射系數以及材料中陷階密度和分佈的改變,從而影響了電子倍增的過程,並進一步改變或影響了沿面閃絡的發展過程。
  20. The selections of electron microscope magnifying multiple and measuring size in fatigue fracture fractal measure are studied in this paper, and the improved treatment of secondary electron lines scanning fractal dimension, is applied successfully to the measuring of ti alloy welded joint fracture fractal dimension and the valuable selective range of fractal dimension measuring parameter is got, which is very important to further research

    本文應用數據處理技術研究了疲勞斷口分維數測量中電鏡放大倍數及測量碼尺的選擇問題,改進了二次電子線掃描分維數處理方法,並成功地應用於鈦合金焊接接頭斷口分維數的測量,得到了有價值的分維數測量參數的選擇范圍,對進一步的研究具有重要意義。
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