electron tunneling 中文意思是什麼
electron tunneling
解釋
電子穿隧-
It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate
模擬結果表明：退火過程所加柵偏壓的大小以及隧道電子效應與建立的界面態所佔比例的不同影響器件的恢復率。 -
Hot electron tunneling mechanism of current collapse in gan hfet
溝道熱電子隧穿電流崩塌模型 -
The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique
利用襯底熱電子注入技術，正電荷輔助隧穿電流可被大大的減弱。 -
The effects of the operation temperatures, gate voltages, drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail. coulomb blockade and single electron tunneling are observed in the devices. 3
詳細地分析了工作溫度、柵極電壓、漏源電壓和磁場對其特性的影響，觀測到明顯的庫侖阻塞效應和單電子隧穿效應，器件的工作溫度可達到77k以上。 -
The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the fn tunneling can be explained in terms of the average electron energy in the oxide
通過計算注入到氧化層中的電子能量和硅襯底的電場的關系表明，熱電子注入和fn隧穿的不同可以用氧化層中電子的平均能量來解釋。 -
A novel flash memory, which uses the source induced band - to - band tunneling hot electron ( sibe ) injection to perform programming, and a pmos selected divided bit - line nor ( pnor ) array architecture are originally introduced in this dissertation
本論文首次提出了一種採用源極誘導帶帶隧穿熱電子注入（ sourceinducedband - to - bandtunnelinghotelectroninjection ）進行編程操作的新型快閃存儲器技術和一種pmos選擇分裂位線nor （ pmosselecteddividedbit - linenor ）快閃存貯陣列結構。 -
We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures
對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明，在相當寬廣的非共振電子入射能區，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構，共振減弱；對于電子隧穿不同磁壘磁阱構成的雙磁壘結構，無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振，這時的電子可實現理想的共振隧穿.研究同時表明，磁量子結構中存在著顯著的量子尺寸效應和負微分電導 -
It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery
假設隧道電子從硅進入氧化層和界面態的建立是輻射效應的恢復機理。 -
Transmission coefficient of electron tunneling through rectangular barrier has been calculated based on the exact solution of the one - dimensional time - independent schr ? dinger equation with the transfer matrix method ; furthermore, the dependence of the transmission coefficient on the effective masses and parameters of rectangular barrier also has been studied
摘要利用傳遞矩陣方法精確計算了一維定態薛定諤方程，求解出電子穿過矩形勢壘的透射系數，進一步研究了該透射系數與有效質量和矩形勢壘參數的關系。 -
The samples were characterized by x - ray diffraction ( xrd ), optical spectroscopy, transmission electron microscopy ( tem ) and scanning tunneling microscopy ( stm ). as a result, a self - assembled monolayer ( sam ) of msa on the surface of fee au particles was directly observed in atomic level
在此基礎上，對金納米粒子和其自組織結晶體進行了一系列的x射線衍射儀（ xrd ） 、透射式電子顯微鏡（ tem ） 、光吸收譜和掃描隧道顯微鏡（ stm ）的檢測和分析。
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