electron-beam annealing 中文意思是什麼
electron-beam annealing
解釋
電子束退火-
The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )
本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0 -
In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient
本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。 -
Tungsten oxide and nickel oxide films were prepared by electron beam evaporation method, and the effect of annealing techniques of the electrochromic properties of these films was discussed
本論文利用電子束蒸發方法制備氧化鎢、氧化鎳薄膜的基礎上，研究了熱處理工藝對于薄膜電致變色性能的影響。 -
The experimental results show that the quality of zno films prepared by electron beam evaporation can be greatly improved by means of two - step annealing of metallic zn films in oxygen ambient, and it is feasible to fabricate high quality mgxzn1 - xo alloy films with mgo buffer layers by using thermal evaporation technique following by two - step annealing process. this method gives a new path to prepare mgxzn1 - xo alloy films
實驗結果表明利用電子束蒸發技術制備的zno薄膜材料，在經過氧氣氣氛下的二次退火處理后，能夠表現出較好的發光和結構特性；以mgo薄膜作為緩沖層制備出了高質量的mgzno合金薄膜材料，這為開展mgzno合金薄膜材料的研究開辟了新的途徑。 -
The best annealing condition of the zno films grown by electron beam evaporation technique was achieved
採用電子束蒸發的方法在si襯底上生長zno薄膜，通過退火實驗，得到了最佳的退火條件。
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