electron-diffraction 中文意思是什麼
electron-diffraction
解釋
電子衍射- electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
- diffraction : 分解
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Experimental basis of quantum physics : photoelectric effect, compton scattering, photons, franck - hertz experiment, the bohr atom, electron diffraction, de broglie waves, and wave - particle duality of matter and light
量子物理的實驗基礎：光電效應，康普頓散射，光子，法蘭克-赫茲實驗，波爾原子模型，電子衍射，德布羅意波以及物質與光的波粒二項性。 -
Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or
此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。 -
For xrd, ellipsometry examinations, single - side - polished si ( lll ) wafers were used as substrates and for resistance measurement, glass was used and for infrared examination, double - side - polished si ( lll ) wafers were used and for ultraviolet - visible spectrophotometry, double - side - polished quartz wafers were used and for tem micrograph and electron diffraction pattern observation, cu nets deposited by formvar film were used. the cu - mgf2 cermet films were from 50 to 600nm thick
用於xrd分析、橢偏測量的單拋si （ 111 ）晶片和電阻測試的載玻片上淀積膜厚約為600nm ；用於ir測試的雙拋si （ 111 ）晶片和uv測試的石英玻璃片上淀積膜厚約為250nm ；用於透射電鏡分析的樣品則淀積在400目銅網上的支撐formvar膜上，膜厚約為50 100nm 。 -
The orientation relationships between cu and mgo are determined by means of electron diffraction patterns. the interface structures are analyzed according to high - resolution images of tem, csl and 0 - lattice theories and verified by simulation computation method
通過電子衍射圖確定了cu與mgo之間的各種取向關系；根據高分辨像對界面結構進行了研究；通過計算模擬驗證了重位點陣和o -點陣理論。 -
The explosive welding specimen were also annealed in vacuum at various elevated temperature from 1000 to 1300. optic microscope, sem, tem and eds ( electron diffraction scattering ) techniques are applied to observe the microstructure and the element profiles of the welding interface and the interdiffused layer, reveal the interdiffused performance of alloy elements at elevated temperature, and analyze the structure and composition of the precipitated phases. moreover, the tensile strength of welding line with the two different techniques and various welding parameters were carried out
採用金相、掃描電鏡、透射電鏡、能譜等多種實驗手段對焊接結合層的微觀組織結構、高溫下nb - 1zr與不銹鋼合金元素的互擴散行為，形成的互擴散層的成分、金相組織和擴散層中的析出相的相組成和相結構等，都進行了較為詳細的分析，並且對在不同工藝、不同焊接參數下焊接的nb - 1zr合金和不銹鋼的焊縫做了強度實驗研究。 -
Reflection high energy electron diffraction method
反射高能電子繞射法 -
The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )
本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0 -
Based on laser molecular beam epitaxy, the strain behavior and the corresponding control technology in oxides heteroepitaxial system, especially in ferroelectric thin films with perovskite structure, was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ). some original and meaningful results were obtained. following aspects were included in this dissertation : the structure of thin films is analyzed by rheed
本論文基於激光分子束外延的基本原理，以高能電子反射為主要監測工具，對氧化物薄膜特別是鐵電氧化物薄膜異質外延過程中應變行為及其控制方法進行了系統的研究，並取得了一系列有意義的結果，主要包括以下內容:利用反射高能電子衍射（ rheed ）的信息對薄膜結構進行分析。 -
Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol
Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明，所得cdse納米線為六方晶型，晶體的（ 001 ）晶面沿平行於基底的方向擇優生長，且隨沉積溫度的降低，這種擇優生長的趨勢越來越強；納米線晶體在生長時，由於受aao模板孔徑的限制，形成c軸方向拉長的晶粒，其長徑比達5 1以上；晶體的大小和完善程度隨沉積溫度的降低而增大， 185沉積得到多晶六方cdse納米線，而140沉積時可得到六方cdse單晶納米線。 -
No5 ： image processing based on the combination of high - resolution electron microscopy and electron diffraction ( invited paper ), f. h. li, microscopy research and technique, 40 ( 1998 ) 86 - 100
場發射高分辨電子顯微鏡在揭示原子解析度晶體缺陷上的應用（特邀論文） ，李方華，科儀新知， 21 （ 1999 ） 8 - 15 -
Selected area electron diffraction image
選區電子衍射象 -
Method of selected area electron diffraction for transmission electron microscopes
透射電子顯微鏡選區電子衍射分析方法 -
Saed ( selected area electron diffraction ), hrem ( high resolution electron microscopy ) and eds ( energy dispersive spectrum ) experiments confirmed that both the porous layer and lamellar layer are composed of nano - crystalline ha ( hydroxyapatite )
實驗中採用了選區電子衍射、高分辨觀察和x - ray能譜等實驗手段，分析了羥基磷灰石各層的形態、成分與微結構。 -
More recent studies show nanowires products with narrow dismeter distribution around 5 - 10mn and lengths ranging from several hundred nanometers to several micrometers can be obtained if the mixture solution of naoh and koh was replaced by koh solution. the nanowires were analyzed by a range of methods including powder x - ray diffraction ( xrd ), high resolution electron microscopy ( hrem ), selected area electron diffraction ( saed ), electron energy loss spectroscopy ( eels ), xrd and hrem image simulations. the structure of nanowires is determinded to be of the type of k2ti6oi3
利用x射線衍射（ xri ） ） 、高分辨電子顯微鏡（ hrtem ） 、選區電子衍射（ saed ） 、電子能量損失譜（ eels ）以及x射線衍射和高分辨像模擬等分析測試手段，初步分析了這種納米線的生長機理，探討了她的結構和光學性能，實驗結果顯示這種納米線具有kzti6o ; 3的結構，紫外一可見光吸收光譜顯示， kzti6ol3納米線禁帶寬度約為3 . 45ev 。 -
The transmission electron microscopy ( tem ) images show that ceo2 nanowires are about 60 nm in diameter, which correspond to the pore sizes of the membranes used. the selected - area electron diffraction ( saed ) pattern indicates that the nanowires selected are single crystals
從透射電鏡（幾瑪圖像可以得知ceo :納米線直徑大約60nln ，與所用膜的孔徑相符，電鏡選區衍射（ saed ）顯示所選的ceo :納米線為單晶結構。 -
Electron diffraction image
電子衍射象 -
To carry out this analysis it is necessary for the experimentalist to have a working knowledge of the background theory of both image contrast and electron diffraction, since these fields form the basis for the interpretation of electron micrographs
要進行這種分析，試驗者必須同時擁有圖象對比和電子衍射的理論背景下的工作經驗，因為這些領域形成了電子毀損的解釋基礎。 -
Low energy electron diffraction method
低能電子繞射法 -
The synthesis process of single - wall carbon nanotubes ( swnts ) by catalytically chemical vapor deposition ( ccvd ) was investigated and the product was characterized with transmission electron microscopy ( tem ), electron diffraction ( ed ), electron dispersive spectra ( eds ) and raman scattering spectra etc. pyrolysis of methane over solid catalysts prepared with impregnation, ion - adsorption precipitation, and sol - gel technique can all lead to the growth of swnts
本文研究了單壁納米碳管的化學氣相沉積法（ cvd ）制備工藝，並運用透射電子顯微鏡（ tem ） 、 x - ray能譜（ eds ）與喇曼（ raman ）光譜等分析手段，對產物及催化劑進行了表徵。採用浸漬法、吸附沉澱法與溶膠凝膠法等制備了催化劑，併合成了單壁納米碳管。 -
Nanostructured bi2s3, cds and zns semi conductors with different sizes and morphologies were synthesized using hydrothermal, solvothermal and liquid - phase method at low temperature through changing reaction conditions. the products were characterized by x - ray diffraction ( xrd ), transmission electron microscopy ( tem ), selected area electron diffraction ( saed )
本文利用水熱、溶劑熱等液相法，在低溫下通過改變反應條件制備了不同尺寸和形貌的bi _ 2s _ 3 、 cds和zns納米結構半導體材料，利用xrd 、 tem 、 saed等測試手段對每一種材料進行了表徵和分析。
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