ellipsometry 中文意思是什麼

ellipsometry 解釋
橢率測量術
  1. Study on heterodyne transmission ellipsometry and nonlinearity error

    透射式外差橢偏測量及非線性誤差分析
  2. For xrd, ellipsometry examinations, single - side - polished si ( lll ) wafers were used as substrates and for resistance measurement, glass was used and for infrared examination, double - side - polished si ( lll ) wafers were used and for ultraviolet - visible spectrophotometry, double - side - polished quartz wafers were used and for tem micrograph and electron diffraction pattern observation, cu nets deposited by formvar film were used. the cu - mgf2 cermet films were from 50 to 600nm thick

    用於xrd分析、橢偏測量的單拋si （ 111 ）晶片和電阻測試的載玻片上淀積膜厚約為600nm ；用於ir測試的雙拋si （ 111 ）晶片和uv測試的石英玻璃片上淀積膜厚約為250nm ；用於透射電鏡分析的樣品則淀積在400目銅網上的支撐formvar膜上，膜厚約為50 100nm 。
  3. Measurement of the electric - optic index of thin films by using modulated ellipsometry

    利用調制式橢偏儀測量薄膜電光系數
  4. The composition, structure, and properties of the as prepared composite films have been characterized in detail by uv - vis, ftir, and x - ray photoelectron spectra, ellipsometry, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, fluorescence spectroscopy, and standard four - probe technique

    採用uv - vis光譜、 ftir光譜、 x -射線光電子能譜、橢圓光度法、掃描電子顯微鏡、原子力顯微鏡、透射電子顯微鏡、熒光光譜和標準四探針技術對所制備的納米復合膜進行了組成、結構和性能表徵。
  5. Biology, etc. owing to many merits has not yet been used to measure parameters of gratings. the paper researches on the subject in view of current lack of it. the main tasks of the paper include : analyzing ellipsometric characteristics of gratings in detail with vector diffraction theory and ellipsometrics ; devising a reflective quarter wave plate at normal incidence according to some ellipsometric characteristics ; making use of normal simplex algorithm during ellipsometric inversion of gratings parameters, inversing ellipsometric parameters with gaussian noise of different standard deviations to simulate actually measured values with examples of isotropic metallic and anisotropic step gratings and testing that ellipsometry about gratings parameters is feasible with the range of certain precision ; discussing choice of incidence angle at length

    本論文的主要工作包括：結合光柵的矢量衍射理論和薄膜的橢偏理論，詳細分析了光柵的橢偏特性；並且根據一些橢偏特性設計出一款正入射反射型單波長1 4波片；在光柵參數的橢偏反演中，引入正單純形法作為反演演算法，分別以各向同性的正弦形金屬光柵和各向異性的階梯型光柵為例，在標準橢偏值的基礎上加入不同偏差的高斯噪聲來模擬實際的橢偏測量值進行反演，在一定精度范圍內得出滿意的光柵參數，說明光柵參數的橢偏測量是可行的；還就入射角的選取問題進行了一定的探討。
  6. The deposited cu - mgf2 cermet films were analyzed by xrd, ed, tem, ir, uv, ellipsometry and temperature - varied four - wire technique

    用ir 、 uv及橢圓偏振光譜技術測量分析樣品從紅外-近紫外波段的透射、吸收及反射光譜特性。
  7. Azimuth, in ellipsometry - the angle measured between the plane of incidence and the major axis of the ellipse

    橢圓方位角-測量入射面和主晶軸之間的角度。
  8. The present article has two goals : first, the determination of the dependence of the complex refractive index of sige alloys on the ge concentration, and second, the demonstration of the application of in situ ellipsometry during rie for depth profiling of the ge content

    本文有兩個目標：第一，決定鍺硅合金的復數折射率與鍺濃度的關系，第二，驗證得到鍺濃度的縱向分佈的rie同步橢偏測量的應用。
  9. The structure properties of a - sinx : h are characterized and analyzed by using ellipsometry, fourier transform infrared ( ftir ) spectroscopy and x - ray photoelectron spectroscopy ( xps ), all the results suggest that the films with the structure of silicon dots / clusters embedding in silicon nitride matrix can be obtained by controlling the hwp - cvd conditions properly

    利用橢偏儀，傅立葉紅外吸收譜（ ftir ） ， x射線光電子能譜（ xps ）等技術對a - sin _ x ： h的結構特性進行了表徵與分析，結果表明，採用hwp - cvd技術合理控制實驗條件，可得到鑲嵌在sin _ x中的納米si結構薄膜。
  10. The chemical composition, micro - structure and optical properties and its application of tio2 thin films deposited on k9 glass by using reactive electron - beam evaporation ( reb ) are studied through sem, tem, xps, xrd, spectroscopic ellipsometry ( se ) and uv - vis spectrophotometer in the dissertation, and the progresses of nucleation and growth of thin film are discussed from the point of view of dynamics and thermodynamics so that a structure model of tio _ ( 2 ) thin film is brought forward

    本文採用sem 、 tem 、 xps 、 xrd 、橢圓偏振儀（ se ） 、 uv - vis分光光度計等分析手段系統地研究了電子束反應蒸發方法在k9玻璃上制備tio _ 2薄膜的成分、結構和光學性能以及tio _ 2薄膜在光學多層膜中應用，並開發了膜系設計軟體。文中還從動力學和熱力學角度分析了tio _ 2超薄膜的形核生長過程，得出了tio _ 2薄膜的組織結構模型。
  11. Since ellipsometry is not sensitive to emission or absorption of light by the plasma, it is one of the few surface techniques that is compatible with a plasma environment

    因為橢偏儀對等離子的光的發射和吸收不敏感，它是少數幾種與等離子環境相兼容的表面技術之一。
  12. Spectroscopic ellipsometry of sic si heterostructures formed by c implantation into crystalline silicon

    異質結構的橢偏光譜
  13. Ellipsometry that is applied to lots of fields such as physics. chemistry. hylology

    鑒于當前對該課題研究的不足，本論文對該課題進行了研究。
  14. Vfsa application in ellipsometry data computing and the improvement tactics of the algorithm

    非常快速模擬退火演算法在橢偏數據處理中的應用及其改進策略研究
  15. To this end, we have performed in situ ellipsometry measurements while etching through homogeneous, comparatively thick sige films of a known ge content

    為此，我們實施了對于刻蝕均勻的比較厚的已知鍺濃度的鍺硅薄膜的同步橢偏測量。
  16. In this study, on the base of the present status and future development of semiconductor materials for solar cells, we have carried out the work to compose film structures of si - based materials by theoretical analysis and experimental methods, which have potential application in modules of solar cells. the processing, features of microstructure and optical properties of the designed si - based thin films have been studied in detail by employing methods of xrd, sem, afm, tem, raman, ftir, uv - vis, pl, and ellipsometry spectroscopy ( se )

    本文在全面總結目前太陽電池材料的研究現狀和其未來發展趨勢的基礎上，系統地從理論和實驗兩方面對應用在太陽電池板上的si基薄膜材料的結構進行了設計，用超高真空磁控濺射儀研究了其制備工藝，用了xrd 、 sem 、 afm 、 tem 、 raman 、 ftir 、 uv - vis 、 pl和橢圓偏光儀（ se ）等分析手段研究了薄膜的相結構、微觀組織特徵和其所具有的光性能。
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