emission band 中文意思是什麼
emission band
解釋
發射帶-
The distance between the acoustic-emission source and the receiving transducer, and the background noise level are primary factors in selecting a particular frequency band.
聲發射源與接收訊號傳感器間的距離以及環境噪聲的電平是選擇頻帶的主要依據。 -
Spontaneous emission can be totally suppressed or strongly enhanced depending on the relative position of the resonant frequency from the edge of the photonic band gap and the photonic mode density. several novel phenomena can be obtained. the spontaneous emission displays an oscillatory behavior, classical light localization, photon - atom bound state, nonzero steady - state population and anomalously large vacuum rabi splitting. and localized mode associated with a defect site in an otherwise perfect photonic crystals, acts as a high - q micro - cavity
通過原子上能級與光子頻率帶隙邊緣的相對位置或者光子態密度，可以抑制或增強原子的自發輻射。分析並得到了一些奇異的現象，如自發輻射的諧振子行為、光的局域、單光子?原子局域態、上能級中存在非零穩態原子布居數、類似於真空中的拉比頻率分裂等。 -
A new model for the growth stage of surface flashover has been developed according to the experimental results, which is based on the solid band theory. it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization, the other is the micro - discharge caused by the trap centers of insulator. the trap cente
電子倍增的過程與材料的表面態直接相關，材料微觀結構的變化和材料的表面處理都能夠導致材料表面態的變化，引起材料的表面二次電子發射系數以及材料中陷階密度和分佈的改變，從而影響了電子倍增的過程，並進一步改變或影響了沿面閃絡的發展過程。 -
Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance
室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。 -
With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature
含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。 -
When x is above 1. 3 %, the emission spectra are strongly broadened and do not show any well - defined features, and their peak positions shift to lower energies correspondingly with increasing x. the large band - gap bowing of gap1 - xnx alloy is induced by the impurity band formation due to the intercenter interaction
對中心發光的nn3束縛激子的零聲子線及其聲子伴線，並得到了nn3的所有聲子伴線（ l0 、 la 、 ta ）的s因子在約20k卜50k范圍內與溫度的關系。 -
The quenching centers aroused by mn2 + introduction merely quench the orange emission of colloidal zns : mn2 + nanocrystals. the quenching process of this kind of quenching centers, which reduce the energy of 4t1 level rather than that of conduction band, is different from that of the quenching centers eliminated by zn2 + introduction. the quenching data is analyzed considering the distribution of mn2 + additives adsorbed at the surface of colloidal nanoparticles
Mn ~ （ 2 + ）表面修飾引起的表面猝滅中心只對橙光發射有猝滅作用，這些猝滅中心和外加zn ~ （ 2 + ）消除的表面猝滅中心猝滅行為不同，它們只減少來自內部mn ~ （ 2 + ）雜質~ 4t _ 1能級上的，而不是zns基質導帶上的能量。 -
Excited with 228nm, the emission bands centered at about 365nm and 460nm originate from the electron transitions of 1d2 - 1s0 and 3d - 1s0 in ag + respectively, and the emission band at 400nm results from the surface plasma resonance of the silver nanoparticles, which aggregated near the surface of the films
在228nm光激發下，復合膜中ag ~ +的電子的~ 1d _ 2 ~ 1s _ 0躍遷和~ 3d ~ 1s _ 0躍遷分別在365和460nm附近發光，聚集在復合膜表面的納米銀粒子的表面等離激元共振導致了400nm附近的發光。 -
This indicated an absence of deep trapping centers. this peak was still observed at room temperature, temperature. the presence of this intrinsic near - band - gap emission line in the pl spectrum even at room temperature is a further indication for the high quality of the epitaxial layer
Znse薄膜樣品在77k時，光致發光譜中只觀測到了近帶邊的發射，而且這一發光一直持續到室溫，說明在si襯底上lp - mocvd外延生長的znse薄膜具有較高的質量。 -
P - n, n - dimethlaminobenzates ( ( ch3 ) 2nc6h4coor ) have typical ict characteristics. the ct emission and the fluorescence intensity ratio of ct band to normal band ( ict / ile ) were different in organic solvent and in the aqueous solvent with ctab micelle when the length of r group was increasing
N ， n -二氨基苯甲酸酯系列具有典型的雙熒光，從甲酯到辛酯隨著酯烷基鏈的增長，它們在有機溶劑和膠束水溶液中的熒光峰位置以及雙重熒光強度之間的比值不同。 -
Zinc oxide as a wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature
寬禁帶zno半導體為直接帶隙材料，具有六方結構，較高的激子束縛能（ 60mev ） ，室溫下帶隙寬度為3 . 3ev 。 -
With increasing the inputting rf power further, the intensity of visible band emission increase, on the contrary, the intensity of uv band decreas. the surface also becomes rough as further increasing rf power
然而隨著射頻功率的進一步增加，薄膜的結晶質量降低，紫外發光變弱，深缺陷發光增強，薄膜的表面平整度變差。 -
The size of the zno nanocrystal grain was so little that the quantum confinement effect should be considered. that makes the band gap wide. atom transfer rate is affected by the substrate temperature, and the average size of the zno nano crystal grain increases with the increasing substrate temperature resulting in the red shift of pl emission position and the narrowness of pl fwhm
低溫生長的氧化鋅晶粒小，考慮到量子限制效應，禁帶寬較大；襯底溫度影響吸附原子遷移能力，隨著溫度升高，晶粒的尺寸增大，分佈變的均勻，因而發光峰位隨著襯底溫度的升高而紅移，發光的半高寬變小。 -
As organic fluorescent materials have a broad emission band and poor luminance purity of the luminance color, the color reproduction of image of oled is poor compared with that of other display devices such as crt, lcd etc. the most popular method to improve the chromaticity of a system is the application of appropriate filter
改善色純度常用的方法就是選通濾光，本文第四章介紹了編寫軟體模擬濾光片的作用，對oled色純度進行優化的工作，以達到了改善器件的光學性能的目的，得出了一些有意義的結論。 -
Compared to gan, which is one of the most successful wide - band semiconductor materials at present, zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature than gan ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy ( ~ 60mev for zno, 25mev for gan ), which promises strong photoluminescence from bound excitonic emissions at room temperature ; meanwhile, homogeneous bulk zno is available
和gan相比， zno薄膜具有生長溫度低，激子復合能高（ zno ： 60mev ， gan ： 21 25mev ） ，受激輻射閾值較低，能量轉換效率很高等優點。有可能實現室溫下較強的紫外受激發射，制備出性能較好的探測器、發光二極體和激光二極體等光電子器件。 -
In the photoluminescence ( pl ) spectra, a new emission band due to the exciton - exciton collision process ( p band ) is observed under low excitation intensity at room temperature. and some fine structures origination from the cavity modes of the fabry - p rot etalon could also be seen clearly
在單根zno微柱（直徑有25 m ）的p帶發光峰上還可以觀察到明顯的f - p腔模式分佈，通過計算得到其腔長為21 m ，同微米柱的尺寸相當。 -
The transmission spectra and reflectance spectra of the pc shift systematically with the spheres size, providing evidence of photonic crystal effects. photoluminescence measurements show efficient emission of the zno photonic crystals in the uv as well as a defect emission band at longer wavelength
利用透射光譜及反射光譜研究了影響zno光子晶體的光子禁帶的工藝參數;利用x射線衍射儀分析了zno光子晶體的結晶和取向性能;利用熒光分光光度計，研究了不同前處理溫度下的zno光子晶體的光致發光譜。 -
The properties of spontaneous emission depend not only on the relative position of the resonant frequency from the edge of the photonic band gap and the photonic mode density but also on the relative distance of the atomic space position from the sidebrand. and we study other property of spontaneous emission
其性質除了依賴于原子上能級與光子頻率帶隙邊緣的相對位置或光子態密度，還依賴于原子的空間位置與側支距離。並對原子的自發輻射的其它特性進行了分析。 -
It is interesting to find that the green - emission band in solvent solution has been quenched, meanwhile, the blue - emission band appeared at the present of b - cd, suggesting that molecular materials have sensitive to the micro - circumstance and have potential application for fluorescence probe
這種由極性環境到非極性環境引起的發射光峰位明顯變化特性，即對微環境的敏感性，具有作為熒光探針的潛在性能。 -
The result shows that the emission of the former is far weaker than that of the latter. in addition, a emission band centered at 520nm was observed in all the annealed nanoparticles while it did not appear all the time in the commercial bulk powders
經過退火處理后，納米晶樣品發射光譜中出現了中心位於520nm的發射帶，而這一發射帶在經過相同退火處理得到的商用熒光粉樣品中始終沒有出現，我們探討了其起源。
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