emission current 中文意思是什麼
emission current
解釋
發射電流-
The types of the detection equipments and apparatus are over 100, such as x - ray detector, r - ray detector, digital ultrasonic flaw detector, eddy current flaw detector, eddy current flaw detector, magnetic memory metal diagnostic instrument, acoustic emission testing an analyzing system, three - dimensional ultrasonic testing system, microcomuterhydraulic pressureniversal testing machine, metalloscope, portable direct - read spectrograph, have achieved the national advanced technology
擁有各種檢測設備100多套，如射線探傷機、數字式超聲波探傷儀、渦流探傷儀、磁記憶金屬診斷儀、聲發射檢測及分析系統、三維超聲波檢測系統、便攜式直讀光譜儀、微機式液壓萬能試驗機、金相顯微鏡等，達到國內先進水平。 -
For micro - cavity semiconductor laser, station model is proposed in this paper and its steady - state and instantaneous characteristics when the coupling efficiency of spontaneous emission into a lasing mode is equal to 1 are analysised. for current noise, sp noise, noise, p noise, as well as current modulation, sp modulation, modulation and p modulation, using small - signal approximation, we derive the laser ' s corresponding transfer functions. and we calculate their signal - to - noise ratio ( snr ) gain in various parameters through frequency domain analysis in the premiss of large input snr
本文對于微腔半導體激光器，提出站模型，能夠較直觀簡潔地分析微腔半導體激光器的穩態和瞬態特性，利用此模型對具有重要實用價值的= 1的微腔半導體激光器進行了討論；對于電流i噪聲、自發發射壽命_ （ sp ）噪聲、自發發射因子噪聲、光子壽命_ p噪聲，以及電流調制、 _ （ sp ）調制、調制、 _ p調制，在小信號近似下，得到了相應的激光器的傳遞函數；在大信噪比的前提下，對激光器進行了頻域分析，分別計算了它們在不同參數下的信噪比增益，分析了其抗噪聲性能。 -
Standard test method for elements in water by direct - current argon plasma atomic emission spectroscopy
用直流氬等離子體原子發射光譜法測定水中元素的標準試驗方法 -
Test method for barium in brines, seawater, and brackish water by direct - current argon plasma atomic emission spectroscopy
用直流氬等離子發射光譜測量法測量鹽水海水和有鹽味的水中鋇的方法 -
Therefore it is the sticking point for solving the problem about separating the duty to find methods by which the customer emission level can be accessed ( the voltage that a customer ' s harmonic current begets at the point of common coupling ) more accurately
由於劃分的依據主要由用戶與電力系統雙方發射的諧波電流在公共聯接點引起的電壓降的比例決定，因此，尋求對用戶諧波發射水平（用戶諧波電流在公共聯接點所引起的電壓降）的準確估計方法，成為了解決責任劃分問題的關鍵。 -
Finally, the method of estimating power customer emission level based on binary linear regression is put forward, which make it a condition that harmonic emission is steady at the point of common coupling. combined with power system thevenin equivalent and customer norton equivalent, according to the principle of least squares method, the voltage that a customer ' s harmonic current begets at the point of common coupling can be estimated in the light of the plural correlation of network parameters
最後，提出了基於二元線性回歸的用戶諧波發射水平估計方法，該方法在假設公共聯接點諧波發射穩定的情況下，結合系統側戴維南等值與用戶側諾頓等值的電路圖，按照最小二乘法原理，利用電網各參數的復數關系推導關于系統側諧波阻抗的二元線性回歸方程，並根據諧波阻抗的估計值求取用戶諧波電流在公共聯四川大學碩士學位論文（ 2003 ）接點產生的電壓降。 -
However, both of them have disadvantages. mo tip feas is fabricated by evaporating tip cathodes on base, so it has bad coherence with the base. on the other hand, the characteristics of silicon result in the bad heat stability, bad emission reliability, and low current density
然而，這兩種陰極存在各自的缺點，如鉬尖錐是蒸鍍在基底上的，所以與基底的附著力不強;而硅的特性又決定了其熱穩定性差，發射的可靠性低，發射電流有限。 -
Transient electromagnetic methods ( tem ) can be called as time domain electromagnetic methods. the exploration equipments of tem include two units : transmitter and receiver. emission current falls down from i to 0 suddenly when step current passes through the transmitter loop
瞬變電磁探測需要發射的電流激勵信號要足夠強、功率足夠大，發射電流波形的關斷時間要求比較苛刻，而且發射部分還需提供實時監測發射電流、關斷時間，記錄電流下降沿等功能。 -
Experimental investigation of a high emission and intense current electron - beam diode
高發射電流密度二極體實驗研究 -
At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。 -
Measurements of the electrical properties of transmitting tubes - measuring methods of grid thermo - emission current
發射管電性能測試方法柵極熱放射電流的測試方法 -
Static - electric field of spindt cathode was analyzed and then field emission current was simulated. the method could direct the fabrication of spindt cathode. how the aspect ration and site density of cnts effect the field enhancement factor were also analyzed
對碳納米管的頂端電場進行了計算，分析了其長徑比和生長密度對電場增強因子的影響，進而可以對場發射實驗進行指導。 -
Standard test method for chemical analysis of refined gold by direct current plasma emission spectrometry
用直流等離子發射光譜法進行精煉金化學分析的標準試驗方法 -
Due to their high aspect ratios and small tip radii of curvature, carbon nanotubes possess marvelous electron field emission properties, viz. low turn - on voltage ( e0 ) and large emission current density ( je ), and have good potential for using as materials in electron emitters of flat panel display
由於奈米碳管具有極高的縱橫比與極小的尖端曲率半徑，因此奈米碳管有著超乎常態的電子場發射特性，低的場發射起始電壓與大的場發射電流密度，使其為電子場發射平面顯示器的良好材料。 -
By changing the negative bias current density, gaseous ratio and total pressure, nanocrystalline diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied. the diamond film presents very low compressive stress and excellent field emission character
採用離子輔助轟擊法，以ch _ 4 、 h _ 2為源氣，襯底溫度為700 900 ，通過改變襯底負偏壓、 h _ 2和ch _ 4氣體比例以及工作氣壓，制備出納米金剛石薄膜，並對工藝參數對金剛石薄膜沉積的影響進行了研究。 -
Films of the cnx nanotube were produced by thermal decomposition on fe - coated si substrates, and their low field emission properties have been investigated. a high - emission current density of 1. 28ma / cm2 for an applied field of 2. 54v / u m was achieved, implying cnx nanotubes have better electron field emitter properties than the films of carbon tubes and bcn tubes do under same experiment conditions
860熱解乙二胺，在沉積有鐵催化劑的矽片上生長出cn _ x納米管薄膜，並進行了低場致電子發射特性測試，外加電場2 . 54v / m時，發射電流達到1 . 28ma / cm ~ 2 ，比相同實驗條件下制備出的碳管、硼碳氮管薄膜的場致電子發射性能優越。 -
Measurements of electrical properties of electronic tubes ; methods of measurement of emission current from hot cathodes for high - vacuum electronic tubes and valves
電子管電氣性能測試.第14部分:高真空電子管加熱陰極 -
Measurements of the electrical properties of electronic tubes. part 13 : methods of measurement of emission current from hot cathodes for high - vacuum electronic tubes and valves
電子管電性能的測量.第13部分:高真空電子管熱陰極發射電流的測量方法 -
The structure of field emission triode is first simulated by magic. the tip height, tip position, tip curvature, gate aperture, and gate voltage are changed, to observe the emission current and the electron congregation
本課題首先採用magic軟體對三極體結構的尖錐場發射陰極進行了模擬計算，分別改變尖錐高度，錐尖位置，尖錐曲率半徑，柵極孔徑及柵極電壓，觀察陽極收集電流及電子束的會聚情況。 -
Measurements of the electrical properties of transmitting tubes - measuring methods of cathode emission current
發射管電性能測試方法陰極發射電流的測試方法
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