energy band structure 中文意思是什麼
energy band structure
解釋
能帶結構-
With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission
通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。 -
Consequently, the energy band structure and the densities of state were researched. secondly, vas - cdgeas2 and ge / as - cdgeas2 were upbuilded
用紅外光譜儀在中紅外區做吸收檢測，結果顯示晶體在中紅外區的吸收較低。 -
Analysis on photocatalytic activity and surface energy band structure of ag, nd tio2 nanometer materials
2納米材料光催化活性及其表面能帶結構分析 -
Lastly, we discuss the energy - band structure of ultracold atoms in optical lattice by means of green function method and in addition, procure the superfluid - mott phase transition condition in mean - field approximation which is in agreement with the result in the literature
最後利用格林函數方法討論了光格子中超冷原子的能帶結構，根據mott相存在能隙的判據我們在平均場近似下重新得到superfluid - mott相變條件，該結論與相關文獻一致。 -
Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ), which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices. as to the doped devices, measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2
研究結果表明， dl - a型雙層結構器件ito / npb / alq / mg : ag的各項性能指標明顯優于單層器件ito / alq / mg : ag ，因為前者有更好的載流子遷移率匹配以及能帶匹配，因此平衡了復合的載流子數目，並且能將復合區有效控制在發光層內部，有效避免了表面的大量缺陷以及電極猝滅效應，提高了載流子的復合效率，從而提高了器件的發光性能。 -
Today, liquid crystal, a new functional material, has been applied more and more widely. on the side of display, owing to stable frarne, absolute environmental protecting, save electric energy and no tire for user, liquid crystal display keeps ahead among the range of display. with the developing of the technology of liquid crystsl, lcd will must substitute for crt and become the chief in market. in additin, liquid crystsl light filers which have been used in optic communicatins and light information handling, emply th e technical of combining the birefringence of liquid crystsl and fabry - petrot - type cavity. they manifest a series of merit, such as narrow band wide, deterioration low, wide tuning domain, simple structure and low cost, so liquid crystal light filter draw attention of many country
現在，液晶作為一種新型功能材料越來越得到廣泛的應用，在電子顯示裝置中，液晶顯示器以其畫面平穩、真正安全環保、省電和使用者不易疲勞等優點領先於顯示器的行列中。隨著液晶技術的發展，液晶顯示器將取代crt顯示器逐步成為未來市場的主流。此外，應用於光通信和光信息處理中的電調諧液晶濾光片，採用液晶材料的雙折射和電光效應與傳統f - p腔相結合，表現出窄帶寬、低損耗、調諧范圍寬、驅動電壓低、結構簡單、低成本等一系列優點，而日益受到各國研究部門的關注。 -
After geometry optimization, their energy band structure, densities of states were calculated and analysised. we also calculated the model of doping cr, which can change the energy band structure of cdgeas2, the result is valuable for decreasing optical absorption. through the energy analysised, it was suggested that a germanium - on - arsenic anti - site defect was the most possible defect which may be associated with the 5. 5 micron absorption, the result of analysis are agreement with the research of epr, so the calculates are accurate
運用密度泛函理論計算，建立純砷化鍺鎘晶體的結構模型並對之進行結構優化，使理論模型更加接近真實結構，從而研究純砷化鍺鎘晶體的能帶結構和態密度、光學性質;分別建立砷空位模型（ vas - cdgeas2 ） ，鍺占砷位模型（ ge / as - cdgeas2 ） ，分別計算它們的能帶結構、態密度、光學性質。 -
By sufficiently making use of the knowledge of the semiconductor, we have analyzed the transference and scatterance of the carriers as well as their emergence and being captured by disfigurement in crystal lattice from angles of crystal micro mechanism, the structure of the energy band and the crystal potential field
本文充分利用半導體的能帶理論，從薄膜晶體結構、能帶結構和晶體勢場的角度，分析載流子的遷移、散射以及載流子的產生和晶體結構缺陷對載流子的捕獲。 -
Topics covered include : crystal lattices, electronic energy band structures, phonon dispersion relatons, effective mass theorem, semiclassical equations of motion, and impurity states in semiconductors, band structure and transport properties of selected semiconductors, and connection of quantum theory of solids with quasifermi levels and boltzmann transport used in device modeling
被覆蓋的論題包括：晶格、電子能帶結構、聲子色散關系、有效質量理論、半經典運動方程和半導體中的非純態、選擇性半導體的帶結構和輸運性質固體量子理論與準費米能級以及用於器件建模的玻爾茲曼輸運理論之間的聯系。 -
Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo, tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo. as we know, band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices
利用mg _ xzn _ （ 1 - x ） o薄膜，可以在保持zno六方纖鋅礦（ wurtzite ）結構的同時有效調節調節薄膜的禁帶寬度，制備出基於氧化鋅的量子阱、超晶格及相關的光電器件，如基於氧化鋅的紫外光探測器、紫外發光二極體和紫外激光二極體等光電子器件。 -
Uv - vis and pl spectra were used to study the energy band structure and the holding states of light - induced - electrons of tio _ ( 2 ) powder and films prepared by magnetron sputtering. the energy band structure and light - induce - electrons holding states were studied by pl spectra, conduction band and impurity energy levels were emerged together and formed a new continuum band
導帶和雜質帶連到一起形成了連續帶?雜質能帶，光生電子並不是位於導帶之上，武漢理工大學碩士學位論文而是占據了2 . 5一3 . sev的連續帶上，主要集中於2 . 65一3 . oev之間。 -
Moreover, we obtain the energy band structure, and the band width of the low - lying energy spectrum of the becs due to the quantum tunneling between degenerate ground states. thus we are able to investigate the coherent properties of the bose - josephson oscillations
此外，我們獲得了由於量子隧穿導致的簡並基態能級劈裂，計算了低能能譜的帶寬，在此基礎上討論了玻色?約瑟夫森振蕩的相干特性。 -
There is also energy band structure for photons in photonic crystal, which is similar as that for electrons in natural crystal ( electronic crysta1 ). localized state will ap - pear if there is an impurity or defect
光子晶體中的光子與一般晶體（電子晶體）中的電子相似，都有能帶結構，都會因為有雜質和缺陷態的存在而存在局域態。 -
Discussion of roles of bonding, structure ( crystalline, defect, energy band, and microstructure ), and composition in influencing and controlling physical properties
探討各物質合成、結構（結晶、缺陷、能量束和微結構）及成分對物理性質的掌握和影響。
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