epitaxial 中文意思是什麼
epitaxial
解釋
晶膜-
A thin epitaxial layer ( 10gm ) ldmos device used n - burry layer structure was proposed in the paper during the high - voltage device design, which is helpful to improve the drive circu it ? technology
在高壓器件研究中，提出了一種外延層厚度為10 m採用n埋層結構薄外延高壓ldmos器件，對進一步改進驅動電路的工藝有著積極的意義。 -
Considering the shortcoming of thick epitaxial layer technology, author proposed a thin epitaxial layer ldmos used n - burry layer. through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage
針對目前厚外延工藝的缺點，提出的薄外延ldmos採用n埋層，通過優化n埋層長度、注入劑量可提高器件耐壓。 -
Z. zhang and w. geng, " direct observation of misfit dislocations at the interface between a decagonal quasicrystal and its epitaxial crystalline layers ", phil. mag. lett., 65 ( 1992 ) 211 - 218
「十面體準晶與其表面晶體之間界面失配位錯的直接觀察」 ， ， （英國） -
Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
砷化鎵外延層厚度紅外干涉測量方法 -
Liquid goldbright gold liquid phase epitaxial growth system
液相磊晶生長系統 -
Generic specification for horizontal liquid phase epitaxial system
臥式液相外延系統通用規范 -
Epitaxial - growth mesa transistor
晶膜生長臺面晶體管 -
Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed
對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。 -
In this thesis, mainly by fmr, combined with moke and magnetic measurement, systematical studies have been made on the magnetic properties, especially magnetic anisotropy in epitaxial single crystalline fe ultathin films on gaas and inas substrates in polycrystalline thin films and in polycrystalline nife and nifeco patterned films of micron and submicron rectangular elements arrays
本論文以鐵磁共振為主要研究手段，輔助以磁性和磁光測量，對外延于gaas及inas上的不同厚度的單晶fe超薄膜、不同厚度的nife多晶薄膜和電子束光刻的多晶nife和nifeco單層利三明治結構的微米及亞微米矩形單元陣列圖形薄膜的磁性，特別是磁各向異性進行了較為系統的研究。 -
Dislocation reduction in gan on sapphire by epitaxial lateral overgrowth
中的位錯降低 -
The effect of the traps in the epitaxial layer is analyzed using the medici simulator and shockley - read ? hall model, which indicates the ppc is independent of the traps in the epitaxial layer
利用medici模擬軟體和shockley - read - hall模型研究了體內陷阱對ppc效應的影響，結果表明體內陷阱與ppc效應無關系。 -
C - plane sapphire substrate for opto - electronic applications as nitride based led is one of the latest additions to our sapphire product line. over the years, sapphire has proven to be a reliable base substrate to grow gallium nitride epitaxial film for high brightness led
C -軸切型的藍寶石是近年來應用在生長氮化鎵藍光led重要的基材。兆晶科技新近增加此產品以因應光電業者殷切的需求。 -
The epitaxial growths of ingaas / gaas / algaas fundamental material and the fabrication of 45 - deflector are extensively studied in our work. some measuring methods are used to evaluate the growth quality of our grown structure by pl, cv, x - ray double crystal diffraction, sem etc. property analysis are provided for it
利用高能電子衍射、電化學c - v 、掃描電鏡（ sem ） 、 x射線雙晶衍射儀、光熒光譜儀（ pl ） 、原子力顯微鏡等多種方法對制備的器件進行了檢測，同時對實驗結果進行了必要的分析。 -
During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss
在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。 -
Commercial gaas epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible.
市售GaAs外延層的質量相當高，故其材料和界面起伏引起的損耗可忽略不計。 -
Metal organic molecular beam epitaxial growth system
有機金屬分子束磊晶生長系統 -
Luminescent properties of c implanted epitaxial silicon
外延硅的光致發光特性 -
Gas source molecular beam epitaxial growth system
瓦斯源分子束磊晶生長系統 -
Photo assisted vapor phase epitaxial growth system
光輔助汽相磊晶生長系統 -
Reduced pressure vapor phase epitaxial growth system
減壓汽相磊晶生長系統
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