equivalent electron 中文意思是什麼

equivalent electron 解釋
當量電子
  • equivalent : adj 1 相當的，相同的，同等的。2 【化學】等價的，當量的；【數學】等價的；等量的；等勢的；【物理學...
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  1. Equal channel angular processing of the pearlitic steel ( 0. 65 wt. % c ) was successfully carried out at 650 with route c in this study, obtaining a total equivalent true strain ~ 5. the microstructure evolution of pearlitic steel in ecap was investigated by means of transmission electron microscope and scanning electron microscope. the main results are as the following : 1

    本研究成功地實現了c方式650珠光體鋼65mnecap變形，累積等效真應變達到5 。並用透射電鏡、掃描電鏡研究了珠光體組織的演變特點和滲碳體的變形。主要結果如下： 1
  2. In particular, no evidence at all was found for a positively charged equivalent of the electron.

    尤其沒有發現一種與電子相當的正電荷存在的任何證據。
  3. Generally, the electron and photons become entangled as the electronic wave packet evolves. if initial photon state is a coherent state and we neglected the transferred photons then the quantized - field calculation is equivalent to the semiclassical calculation

    當初始光子態是相干態，且忽略轉移的光子數時，電子與量子場系統之間不存在相關性，這種情況下量子場計算與半經典計算等價；當初始光子態是f 。
  4. The results show that mno which not be modified can not be use as electrode active materials because of its poor electrochemical activity. meanwhile, the rechargeabilify of mno modified by bi and pb is improved. bismuth could prolong the second electron equivalent discharge and lead could improve the first electron equivalent discharge performance

    I44 ）對熱分解產物進行了充放電，循環伏安，恆電流極化， tafe曲線分析，交流阻抗分析，得出未摻雜的mno直接作為電極活性材料，其電化學活性很差，但通過摻bi ， ph進行改性，提高了其可充性， 1的影響主要在於第二電子放電， ph則可以延長第一電于放電
  5. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
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