etching effect 中文意思是什麼
etching effect
解釋
浸蝕效應-
In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper
本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。 -
Theoretical analysis and experimental results show that the mentioned methods above can simplify the process condition, improve the etched effect, shorten the etching time and obtain more even etched surface. 2 ) laser - assisted wet sequencially - selective - etching method has been developed this method can be applied when the corrosion solution is mixed solvent
2 ）提出了激光化學誘導液相次序選擇腐蝕法該方法適用於腐蝕液為混合溶劑的情況，例如， h2so4 - h2o2對gaas基片進行腐蝕時，先採用h2o2對基片進行氧化腐蝕處理，再利用h2so4進行激光化學腐蝕。 -
Compared with the conventional chemical etching, laser assisted wet chemical etching can eliminate the effect of crystal orientation efficiently and fabricate more diversified etched pattern ; compared with the laser assisted gas chemical etching, the required condition for laser wet etching can be realized more easily and the operation can be simplified ; compared with the ion etching, it has advantages of no ion damage to substrate, avoiding over - etching and cost - effective
半導體的激光誘導液相腐蝕與普通化學腐蝕相比，可以有效地消除晶體取向影響，製作出更加多樣化的腐蝕圖形;與激光誘導氣相腐蝕相比，其工藝條件更加容易實現，操作更加簡單;與干法離子刻蝕相比，對基片無離子損傷，過度腐蝕容易控制，成本低。 -
Analyzing the treated yak hairs with sem, xps and et al, it showed under the same conditions, the effect of etching is enhanced with the increasing of power of wave, and the hydrophilicity and dyeing rate enhanced obviously
通過sem 、 xps及吸附性能等的分析，結果表明，在相同參數的等離子體條件下，隨著產生等離子體的微波功率的增大，對氂牛毛纖維表面的刻蝕效果增強；經過等離子體處理過的氂牛毛纖維的親水性，上染率等都有明顯的提高，說明該方法是一條切實可行的路線。 -
In this project we use etching method x - ray transmission and tem observe and study the form mechanism of cell structure and linear structure ; use sem observe cell structure directly and evaluate effect to the electrical properties of substrate ; at last, use high resolution tem and eds to observe and identify the nature of microdefects
發現幾乎所有高位錯密度的si - gaas單晶的表層都具有網路狀胞狀結構或系屬結構，首次對該胞狀結構和系屬結構的形成機制進行了研究；直接觀察微缺陷，配合eds （能量色散譜）鑒定si - gaas中微缺陷的物理本質，同時分析其產生原因，討論與位錯的相互作用。 -
In addition, the effect of collisions and a low source power can slow down the etching process
碰撞效應和低電源功率減緩刻蝕的進程。 -
Generally, the etching rate for different local surface is dependent of the local slope of the surface. in this paper, we call this < wp = 6 > phenomena quasi - direction effect. to reduce the difficulty, we use a mathematical model for the surface shape analysis in this paper
為了減小分析的難度，本論文採用了一個有效的數學模型，分析了在刻蝕工藝中基底自身面形輪廓的曲線形狀對基底局部區域的刻蝕速率產生的影響，我們稱這種影響為準單向刻蝕效應，並通過對數學模型的理論分析和計算機模擬得出受此影響而產生的面形形狀，並將結果與實驗進行對比。 -
Through the analysis, it is shown that : 1, while fabricating the grating, the principle of selecting the parameters is : the period should be as large as possible, the etching depth should be small and filling factor should approach to 0. 25. 2, if selecting the parameter combine the selecting principle and the requirement of concrete application, the space of selecting the parameter should be larger than before. 3, while the period to. 4a, the surface profile has no effect on the reflectivity
通過分析發現： 1 、在製作有一定特性的光柵時，光柵參數的選擇原則為：周期的取值應盡量的大，刻蝕深度的取值應盡量的小，占空比的取值應盡量靠近f = 0 . 25 ； 2 、以參數的選擇原則結合製作的具體應用要求宋選擇光柵的參數，則各個參數的優化空間更大； 3 、當光柵的周期t 0 . 4時，表面面形對反射率沒有影響； 4 、運用臨界周期點隨折射率的變化規律，可以避免由於選擇光柵周期過大而出現一級衍射，從而導致製作失敗。
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