etching mask 中文意思是什麼
etching mask
解釋
腐蝕掩模-
Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool, reticule, resist exposure, development and etching, they are beneficial to develop a yield - driven layout design tool, the engineers could use it to automate the tasks of advanced mask design, verification and inspection in deep sub - micron semiconductor manufacturing
建立準確描述由於掩模製造工藝、光刻膠曝光、顯影、蝕刻所引起的光學鄰近效應和畸變所導致的關鍵尺寸變化的光刻工藝模型，有助於開發由成品率驅動的版圖設計工具，自動地實現深亞微米下半導體製造中先進的掩模設計、驗證和檢查等任務。 -
The processes include the deposition of the waveguide film, the design and fabrication of the mask pattern, the lithography, the metal coating with a magnetic sputtering, the lift - off process for the metal mask, the dry deep etching by icp, the slicing of the wafer, the polishing of the cutting edge, the fiber - to - waveguide alignment and at last, the performance testing. some edg chip samples are fabricated
對設計好的集成波導器件，本論文設計並試驗了器件的製作的全部工藝，包括波導薄膜的沉積，掩模的設計製作，光刻，濺射金屬薄膜，剝離法製作金屬掩模，干法深刻蝕，矽片切割，端面磨拋，波導對準和性能測試。 -
When the two layers of sio2 with different refractive index are finished, the designed mask pattern is printed on the film by photolithography. after that, icp is performed for dry etching, then, the waveguide structures are obtained. at present, the rudimental graph of edg has been obtained
兩層不同折射率的sio _ 2薄膜制備好之後，經過光刻、等離子體刻蝕（ icp ）的工藝步驟之後，形成了波導結構，初步製作出了器件的圖形。 -
In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask
在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。 -
P - type silicon crystal plates have been adopted in the text, which are formed mask sio2 by heat - oxygenation. and figures are diverted by normal light etching technology
本文採用p型單晶矽片，由熱氧化形成sio _ 2掩膜層，標準光刻工藝進行圖形轉移，用koh溶液濕法刻蝕製作倒四棱錐腐蝕坑列陣。 -
The purpose of this thesis is to develop the laser assisted wet chemical etching on the gaas substrate. the main contents and contributions include : 1 ) laser - assisted wet mask - etching method and poles - etching method have been proposed laser - assisted wet mask - etching method is that the area which need not etched is covered by mask film, and the uncovered area is processed by laser induced wet etching
本文的工作就是圍繞半導體gaas基片的激光化學誘導液相腐蝕技術開展的，主要的研究結果和創新之處如下: 1 ）提出了激光誘導液相抗蝕膜掩蔽法和電極腐蝕法抗蝕膜掩蔽法是指在基片表面不需要腐蝕的區域用抗蝕膜覆蓋，激光照射在無抗蝕膜區域，對基片進行腐蝕。 -
In order to make integration of theory with practice, a lot of experiments have been done. mask - making technology, photoetching and wet - etching processes have been optimized. the author also presents the application and commercial value of silicon v - groove arrays
在實踐上，對製作工藝積極探索，提出新的制備硅掩蔽膜的工藝方案，對影響光刻質量的因素深入分析，試驗摸索出適用於v型槽的各向異性濕法腐蝕的腐蝕液配方，獨立優化設計了製作硅v型槽的相關工藝，製作出高質量的硅v型槽。 -
So the mirror and mechanical part can be fabricated in a one - level mask step by bulk micromachning of ( 100 ) with koh etching. we can on off the light path and switch the light exchange by controlling the movement of mirror
本論文使用傳統的koh腐蝕液，利用硅材料的各向異性的特點，加工出了垂直於襯底表面的微鏡結構，利用這種微鏡結構可以完成光線的切換，實現光路的開關功能。 -
The work mainly consists of four parts : the first part is to use oxidation and lpcvd technique to produce sio2 mask film and si3n4 insulation film in order to enhance the heating efficiency of micro chamber, and guarantee the carry out of the reaction. the second part is to use the combination of dry etching and wet etching to produce reaction micro chamber, it is the container which carry out the pcr reaction, and dna sample carry out amplification reaction here. the third part is to use the sputtering, photolithography to produce heaters and temperature sensors which heat the reaction micro chamber and provide the temperature condition for the pcr reaction
首先，利用氧化工藝和lpcvd技術，生長sio _ 2掩膜層和si _ 3n _ 4絕緣層，以提高反應腔的熱效率，保證擴增反應的順利進行；其次，用濕法腐蝕和干法刻蝕相結合的方法加工微型腔體，使之作為dna樣品進行pcr擴增反應的容器；第三，用濺射、光刻等工藝在微型腔體底部製作微型加熱器和溫度傳感器，實現對反應腔體的加熱及其溫度的精確測量，提供pcr擴增反應所需的溫度條件。 -
The diffraction efficiency of phase mask is discussed by using rigorous coupled - wave theory. the results are useful for fabrication of phase mask. and the diffraction efficiency of linearly chirped phase mask is discussed, it presents require of ion - beam etching
利用嚴格耦合波理論對光纖光柵相位掩模的衍射效率問題進行了深入研究，以達到指導光纖光柵相位掩模實際製作的目的，並且研究了啁啾掩模的衍射效率問題，為線性啁啾光刻膠掩模的離子束刻蝕提出了要求。 -
Otherwise, the thinner mask thickness or larger etching width is, the higher etching velocity and larger depth raise
比較小的掩膜厚度和大的刻蝕線寬都有利於刻蝕的速度和深度。
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