etching method 中文意思是什麼

etching method 解釋
浸蝕法
  • etching : n. 1. 蝕刻法；蝕刻（銅）版畫；蝕鏤術。2. 蝕刻畫，蝕刻版，蝕刻版印刷品。
  • method : n 1 方法，方式；順序。2 （思想、言談上的）條理，規律，秩序。3 【生物學】分類法。4 〈M 〉【戲劇】...
  1. Abstract : the preparation of cuprous chloride from etching waste liquor of cupric chloride and crude copper powder was studied. the result showed that this method had many advantages, including simple process, easy operation and good quality of product, therefore it had remarkable economic and environmental benefits

    文摘:以氯化銅蝕刻液廢液、粗銅粉等為原料，在常溫下反應制備氯化亞銅，工藝簡單，操作簡便，產品質量好，具有顯著的經濟效益和環境效益。
  2. Method of oxalic acid etching test for stainless steels

    不銹鋼用草酸劑侵蝕試驗方法
  3. Testing of materials for semiconductor technology ; determination of etch rates of etching mixtures ; silicium - dioxid coating ; optical method

    半導體工藝材料的檢驗.蝕刻混合劑浸蝕率的測定.第2部
  4. Testing of materials for semiconductor technology ; determination of etch rates of etching mixtures ; silicium monocrystals ; gravimetric method

    半導體工藝材料的檢驗.蝕刻混合劑浸蝕率的測定.第1部
  5. Flowchart of " directly etching method of chemical forming veined and granular aluminum alloys surface

    鋁合金表面化學紋理直接蝕刻的方法流程
  6. Directly etching method of chemically forming veined and granular aluminum alloys surface

    化學紋理直接蝕刻的方法
  7. Surface modification of ultrahigh molecular weight polyethylene uhmwpe fiber by chemical etching method

    電暈法處理超高相對分子質量聚乙烯纖維
  8. Provide a whole set technology solution of " directly etching method of chemically forming veined and granular

    表面化學紋理直接蝕刻的方法"技術服務
  9. Provide unique solvent of " directly etching method of chemically forming veined and granular aluminum alloys surface " f

    提供"鋁合金表面化學紋理直接蝕刻的方法"工作液
  10. To solve the problem of low coupling ratio, a new method is put forward - the whole etching method

    另外，針對耦合效率低的存在問題，提出了一種新的設計方案-整體腐蝕法。
  11. The results of testing show that the silicon ( 111 ) crystal plane is very smoothing by etching method

    測試結果表明，利用腐蝕方法得到的硅的（ 111 ）晶面周期結構平整光滑。
  12. Theoretical analysis and experimental results show that the mentioned methods above can simplify the process condition, improve the etched effect, shorten the etching time and obtain more even etched surface. 2 ) laser - assisted wet sequencially - selective - etching method has been developed this method can be applied when the corrosion solution is mixed solvent

    2 ）提出了激光化學誘導液相次序選擇腐蝕法該方法適用於腐蝕液為混合溶劑的情況，例如， h2so4 - h2o2對gaas基片進行腐蝕時，先採用h2o2對基片進行氧化腐蝕處理，再利用h2so4進行激光化學腐蝕。
  13. Directly etching method of chemically forming veined and granular aluminum alloys surface " which is the latest invention patent application number : 00117311. 1. the innovative and simple process is absolutely

    現在所提供的"鋁合金表面化學紋理直接蝕刻的方法"發明專利申請: 00117311 . 1是最新發明專利技術，創新而簡易的蝕刻工序在"鋁件表面處理"量產時對比于傳統的機械噴沙絕對是
  14. According to the working principle of thermo - electrode, we demonstrate the structure of enlarged reflection area and the structure of step broaden waveguide to improve the switch ' s performance and bring down the driving power. according to the fabricating condition of our lab, we proposed simple wet - etching method to fabricate the oversized waveguides and peeling - off method to fabricate the electrode

    針對全內反射和熱電極的作用特點，在全內反射型熱光開關的設計中提出了擴大反射區結構和漸變展寬結構，理論模擬和實驗結果表明該方法能有效地提高了開關性能，降低了驅動功率。
  15. Poles - etching method is that the etching current caused by the external voltage is used to promote the intermediate ion product break away from the surface of substrate and keep the etching rate stable

    電極腐蝕法是指在激光腐蝕的過程中，通過外加電壓在溶液中形成腐蝕電流，促使中間離子產物脫離基片表面，使腐蝕持續穩定進行。
  16. Meanwhile, the paper gives a detailed discussion on the coupling principles and also the fabricating processes of these three traditional fiber couplers. the hf etching method to fabricate the coupler is studied

    同時，本文還具體介紹了上述三種傳統的光纖耦合器製作方法，即熔融拉錐法、氫氟酸腐蝕法和邊研磨法製作光纖耦合器的原理以及製作工藝。
  17. The purpose of this thesis is to develop the laser assisted wet chemical etching on the gaas substrate. the main contents and contributions include : 1 ) laser - assisted wet mask - etching method and poles - etching method have been proposed laser - assisted wet mask - etching method is that the area which need not etched is covered by mask film, and the uncovered area is processed by laser induced wet etching

    本文的工作就是圍繞半導體gaas基片的激光化學誘導液相腐蝕技術開展的，主要的研究結果和創新之處如下: 1 ）提出了激光誘導液相抗蝕膜掩蔽法和電極腐蝕法抗蝕膜掩蔽法是指在基片表面不需要腐蝕的區域用抗蝕膜覆蓋，激光照射在無抗蝕膜區域，對基片進行腐蝕。
  18. In this project we use etching method x - ray transmission and tem observe and study the form mechanism of cell structure and linear structure ; use sem observe cell structure directly and evaluate effect to the electrical properties of substrate ; at last, use high resolution tem and eds to observe and identify the nature of microdefects

    發現幾乎所有高位錯密度的si - gaas單晶的表層都具有網路狀胞狀結構或系屬結構，首次對該胞狀結構和系屬結構的形成機制進行了研究；直接觀察微缺陷，配合eds （能量色散譜）鑒定si - gaas中微缺陷的物理本質，同時分析其產生原因，討論與位錯的相互作用。
  19. The sem and the pl observation showed that the surface of porous silicon prepared by pulsed etching was more uniform and the si particles were smaller. the intensity of pl formed by pulsed etching method was enhanced and the peak had blue shift comparing that formed by dc electrochemical etching method. at the same time, it was observed that the smaller the dimension of the porous silicon, the broader energy gap of the porous silicon

    採用脈沖和直流電化學腐蝕兩種方法制備多孔硅，對這兩種方法制備的多孔硅樣品進行掃描電鏡和熒光光譜的測量，發現脈沖腐蝕制備的多孔硅樣品比直流腐蝕制備的多孔硅樣品表面均勻、顆粒尺寸小、發光強度大，而且發光峰位有明顯的藍移現象。
  20. The testing results shows that the grating has a very well antireflective characteristic, and the values of testing parameters approximately equals to the designed parameters ". it indicates that the plasma - assisted etching method is very valid to fabricate deep grating

    測量結果發現該光柵具有良好的增透特性，測得的光柵參數和理論設計的參數基本一致，說明等離子體輔助刻蝕是製作深光柵的有效方法。
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