etching technique 中文意思是什麼
etching technique
解釋
蝕刻技術-
Microwave electron cyclotron resonance ( mwecr ) cvd is a newly developed technique for plasma processing and materials fabrication, such as plasma etching and films deposition
本論文介紹了我們對ecr等離子體cvd系統的測試、 bn薄膜的制備和薄膜光學特性研究。 -
The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed
本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。 -
In the beginning, the development history and the current development of the technique of fiber detection are introduced briefly. then, discussed in detail are strong coupling theory concerning the fbt coupler and the weak coupling theory concerning the hf acid etching and the side - polishing coupler. from the analysis of fiber coupling equations, the solution of the equation and the formula of the coupling coefficient are derived
本文首先概述了光纖竊聽技術的發展歷程和現狀，有針對性地分析了關于光纖竊聽技術中的光纖耦合問題，並詳細介紹了用於熔融拉錐耦合器的強耦合理論和用於氫氟酸腐蝕與邊研磨光纖耦合器的弱耦合理論;分析了耦合模方程，得出了耦合模方程的形式解，推導出耦合系數的計算公式。 -
At the part of experiment, we study the wet - etching technique of glass substrate, based on semiconductor process, which includes photolithography and etching
實驗部分研究了基於半導體工藝的玻璃濕法刻蝕技術。包括玻璃面板上的光刻和刻蝕。 -
Gas etching technique
氣體刻蝕技術充氣的 -
The result of experiment proves that the design and manufacture project for silicon magnetic - transistor is feasible completely, specially, in the course of manufacturing magnetic - transistor technique, anisotropic etching is applied and reliable technique project is provided in order to manufacturing silicon magnetic - transistor with rectangle - plank cubic construction, these technologies can be compatible to ic technology, integrated easily and there is a wide application field
本文根據實驗結果，確認了該硅磁敏三極體設計、製作方案完全可行。尤其在硅磁敏三極體的製作工藝中採用了硅各向異性腐蝕技術，為實現在矽片上製造具有矩形板狀立體結構的硅磁敏三極體提供了可靠的技術方案。製作工藝不但能與ic工藝相兼容，而且便於集成化，將有廣泛的應用領域。 -
The work mainly consists of four parts : the first part is to use oxidation and lpcvd technique to produce sio2 mask film and si3n4 insulation film in order to enhance the heating efficiency of micro chamber, and guarantee the carry out of the reaction. the second part is to use the combination of dry etching and wet etching to produce reaction micro chamber, it is the container which carry out the pcr reaction, and dna sample carry out amplification reaction here. the third part is to use the sputtering, photolithography to produce heaters and temperature sensors which heat the reaction micro chamber and provide the temperature condition for the pcr reaction
首先，利用氧化工藝和lpcvd技術，生長sio _ 2掩膜層和si _ 3n _ 4絕緣層，以提高反應腔的熱效率，保證擴增反應的順利進行；其次，用濕法腐蝕和干法刻蝕相結合的方法加工微型腔體，使之作為dna樣品進行pcr擴增反應的容器；第三，用濺射、光刻等工藝在微型腔體底部製作微型加熱器和溫度傳感器，實現對反應腔體的加熱及其溫度的精確測量，提供pcr擴增反應所需的溫度條件。 -
Finally, according to the technique of plasma etching, an evolution model describing the spatio - temporal profiles of the micro - trench is established. and that we simulated the effects of collisions and the source parameters on the etching profiles
最後，針對等離子體刻蝕工藝，建立了微結構區剖面的時空演化模型，並模擬了碰撞效應和電源參數對刻蝕剖面演化的影響。
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