excitonic 中文意思是什麼

excitonic 解釋
激子的
  1. Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices

    由於氧化鋅具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，因而被認為是製作紫外半導體激光器的合適材料。
  2. This direct band - gap material has a large exciton binding energy ( 60mev ), which permits excitonic recombination even at room temperature. thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions

    它有較高的激子束縛能（常溫下為60mev ） ，使得其在室溫下可以發射紫外激光，因此作為新一代的半導體發光材料受到廣泛關注。
  3. In 1990s, a calculation of the ground - state energy of an exciton confined in a cylindrical quantum wire in the presence of a uniform magnetic field is reported as a function of wire radius, using a variational approach by gang li, spiros v. branis and k. k. bajaj. a. balandin and s. bandyopadhya present variational calculations of the ground - state exciton binding energy and exciton radius in a quantum wire subjected to an external magnetic field. these studies have been primarily responsible for our current understanding of the nature of excitonic states in a quantum wire subjected to an external magnetic field

    九十年代中期，人們就開始了關于在外加磁場時量子線中激子特性的研究， gangli ， spirosv . branis和k . k . bajaj利用變分法，對于圓柱形的量子線中激子的基態束縛能進行了計算，發現對於一個給定的磁場值，激子的基態束縛能比不加磁場時變大。
  4. The wavelength of pump light in white light mode is 400nm. 2. the excitonic tunneling from cdznse qw to cdse quantum dots under resonant excitation was investigated using femtosecond pump - probe technology on the cdznse quantum well / cdse quantum dots structure

    用飛秒脈沖泵浦-探測方法研究了cdse量子點znse cdznse量子阱結構在對cdznse量子阱的激子共振激發條件下激子在量子阱與量子點之間的隧穿。
  5. Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices. since the first observation of the stimulated ultraviolet emission at room temperature, zno has become another hotspot in the region of uv light emitting researching

    氧化鋅在室溫條件下具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，是製作紫外光電子器件的合適材料，自1997年首次發現zno室溫紫外受激發射以來， zno研究已成為繼gan之後紫外發射材料研究的又一研究熱點。
  6. Compared to gan, which is one of the most successful wide - band semiconductor materials at present, zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature than gan ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy ( ~ 60mev for zno, 25mev for gan ), which promises strong photoluminescence from bound excitonic emissions at room temperature ; meanwhile, homogeneous bulk zno is available

    和gan相比， zno薄膜具有生長溫度低，激子復合能高（ zno ： 60mev ， gan ： 21 25mev ） ，受激輻射閾值較低，能量轉換效率很高等優點。有可能實現室溫下較強的紫外受激發射，制備出性能較好的探測器、發光二極體和激光二極體等光電子器件。
  7. Low dimensional ii - vi semiconductor structure is one of ideal material for exciton nonlinear optical devices at room - temperature and greem - blue emission devices due to it ' s large exciton binding energy and strong room - temperature exciton effect. thus the excitonic effects in ii - vi semiconductor quantum wells and asymmetric double quantum wells have been studied deeply and widely

    特別是-族半導體低維結構由於較大的激子束縛能和強的室溫激子效應，使它有希望成為制備室溫激子非線性器件和藍綠光器件的理想候選材料之一，為此-族半導體量子阱和非對稱雙量子阱的激子效應已被很深入地研究。
  8. 4. photolumescence and micro - photoluminscence of cdznse qw / znse / cdse qds with different znse barrier thickness was studied to investigate the influence of tunneling on excitonic combination in quantum well and quantum dots. we studied the temperature dependent of the excitonic recombination

    通過cdse量子點znse cdznse量子阱結構在不同壘層厚度情況下的發射譜和變溫激子發射譜，研究了激子隧穿過程對量子點和量子阱中激子復合的影響。
  9. It is widely accepted that zno is one of the most promising materials for producing an ultraviolet laser at room temperature due to its wide direct band gap ( eg = 3. 3ev ) and large excitonic binding energy of 60 mev, which was testified by the results of optically pumped stimulated emission and lasing from zno thin films

    氧化鋅作為一種寬帶隙半導體（ 3 . 3ev ） ，激子束縛能大（ 60mev ） ，在室溫下容易獲得強的激子發射，而且可能成為紫外激光的重要材料。因此，對氧化鋅的研究已成為繼gan之後寬帶隙半導體研究的又一熱點。
  10. Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo, tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo. as we know, band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices

    利用mg _ xzn _ （ 1 - x ） o薄膜，可以在保持zno六方纖鋅礦（ wurtzite ）結構的同時有效調節調節薄膜的禁帶寬度，制備出基於氧化鋅的量子阱、超晶格及相關的光電器件，如基於氧化鋅的紫外光探測器、紫外發光二極體和紫外激光二極體等光電子器件。
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