external quantum efficiency 中文意思是什麼

external quantum efficiency 解釋
外部量子效率
  • external : adj 1 外部的，外面的；【哲學】外界的，客觀的，物質的。2 表面上的 （opp intrinsic）; 膚淺的，淺薄...
  • quantum : n. （pl. -ta ）1. 量，額；定量，定額；份；總量。2. 【物理學】量子。
  • efficiency : n. 1. 功效。2. 效率；效能；實力，能力。3. 【物理學】性能。
  1. 4 design of hb - led is focused on mqws and top layer. compensatory mqws for led active layers have led to good results follow the analysis in former two chapters. systematic analysis of current injection and light output via external quantum efficiency of hb - led showed mat the optimum of top layer of hb - led is appeared to be between 15 u m and 20 u m, and at least is 5 u m

    根據前兩章的分析設計出補償應變多量子阱的有源區結構；然後分析計算了器件的電注入和光輸出過程，指出降低頂層的電阻率和增加頂層厚度都可以使注入電流更有效地擴展到上電極外面的區域，增加厚度還可以增加器件的側面出光。
  2. The detector was characterized to have a cutoff wavelength at 340 nm and the photo - responsivity measurements on the pixels result a uv response as high as 0. 15 a / w, corresponding to an external quantum efficiency of 54. 8 % in the visible - blind spectral ranging from 400 down to 250 nm

    該肖特基光電二極體陣列的光譜響應截止邊為340nm 。在400nm至250nm的紫外光盲區域，光電響應測試顯示該器件在截止邊波長處具有0 . 15a / w的高響應度，相對應的外量子效率為54 . 8 。
  3. It can remarkable enhance the external quantum efficiency by changing the structure of faceplate and decrease the light loss, because if can change the direction of the ray, and avoids the light - wave effect

    這正是本文研究的內容。這種方法通過改變器件的結構，降低光在器件內部全反射的損失，從而提高器件的外量子效率。
  4. For being with many advantages, it has been an active subject in recent years and much progress has been made. on the basic of analysis of many kinds of led structures, a new kind of strained layer structure has been introduced into our designed hb - led which has been manufactured in our laboratory to demonstrate a even higher efficient light emission. through calculation of led external quantum efficiency, a method for design hb - led top layer was evaluated

    本論文分析了當前國內外各種led的結構及其製作工藝，在技術上較為成熟的雙異質結構基礎上，我們在器件的有源區引入應變多量子阱結構，並根據實際需求增加補償應變技術以保證發光層結構的穩定性；通過對器件外量子效率的計算，使得在器件設計有了定量的理論分析依據；並採用先進的渦輪lp - mocvd成功制備出galnp gaalinp應變多量子阱高亮度發光二極體器件。
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