field annealing 中文意思是什麼
field annealing
解釋
場致退火-
One is to improve the photoconductivity by annealing the mpc film under magnetic field ; the other is to form composite multi - layer film of zno / pbpc and sno / pbpc, to change the spectral response range of mpc films
一是通過磁場熱處理提高酞菁薄膜的光電導性能；二是通過將p型酞菁與n型材料異質復合，改變光譜響應范圍。 -
The corrosion behavior of nanocrystalline ( nc ) copper bulks with various grain sizes prepared from igc ( inert gas condemsation ) and vacuum annealing in comparison with conventional microcrystalline ( mc ) copper ( as - rolled and electrolytic ) in acid copper sulphate solution and neutral solution containing chlorides under free corrosion conditions and anodic polarizations has been studied using potentiodynamic polarization, potentiometric analysis, cyclic voltammetry and electrochemical impedance spectroscopy. x - ray diffraction was used to estimate the grain size of the annealed nc copper. field emission gun scanning electron microscopy and x - ray energy - dispersive spectroscopy was used to characterize the surface morphology and analyze the surface composition after the polarization and potentiometric test of both nc and mc copper
本文研究了用igc （惰性氣體蒸發凝聚原位溫壓法）制備並真空退火到不同晶粒尺寸的納米晶銅和微米晶銅（冷軋紫銅、電解銅）在酸性硫酸銅溶液和中性含氯溶液中，在自腐蝕狀態和陽極極化狀態下的腐蝕性能。使用了動電勢極化、電位測定、循環伏安法（ cv ）和電化學阻抗譜（ eis ）等方法。 x -射線衍射（ xrd ）的方法用來估算納米晶銅晶粒尺寸。 -
In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth
本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。 -
New technology of gcr15 steel s sphere annealing in pulse - electric field
15鋼球化退火新工藝 -
The results showed that the microstructure of as - deposited tbdyfe ii 1ms were amorphous and the crystal of tbfe2 were found in films after annealing at 500. annealing films in vaccum could improve the saturation magnetization ms and the susceptibility, decrease the coercivity and the saturaion field, and make the direction of the magnetic moments parallel to the film plane
結果表明，制備態薄膜為非晶態結構，經過500真空退火熱處理后，薄膜出現了tbfe _ 2的結晶物，薄膜的矯頑力和外場的飽和磁場大大降低，飽和磁化強度增強，初始磁化率提高，易磁化軸轉向膜面。 -
Selecting a proper neighborhood system and using the ability of markov random field to describe spatial dependence, mrf can be used to model the structural and textural behavior of images. selecting a appropriate model and making use of the optimal algorithm ? simulated annealing to estimate the parameters, wonderful image restoration can be achieved
馬爾可夫隨機場能夠很好地描述空間連續性，用適當的鄰域系統，能對圖像的結構特徵建模；結合優化演算法?模擬退火，可以獲得滿意的圖像復原效果。 -
Ptmn has practically been used as anti - ferromagnetic layer to pin ferromagnetic layers because of its large exchange bias, high blocking temperature and excellent thermal stability. on the other hand, ptmn films deposited by magnetron sputtering without substrate heating require a relatively high temperature post - deposition annealing in magnetic field to induce a unidirectional exchange field hes
由於ptmn反鐵磁材料具有大的交換偏置，比較高的blocking溫度和較好的熱穩定性，在自旋閥結構中ptmn已經在實際應用上用來釘扎鐵磁層。
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