field effect 中文意思是什麼

field effect 解釋
電場效應
  • field : n 菲爾德〈姓氏〉。n 1 原野，曠野；（海、空、冰雪等的）茫茫一片。2 田地，牧場；割草場；〈pl 〉〈集...
  • effect : n 1 結果。2 效能，效果，效力，效應，作用，功效；影響。3 感觸，印象；外觀，現象。4 旨趣，意義。5 ...
  1. Algan gan heterostructure field effect transistor materials grown by molecular beam epitaxy

    生長的跨導為186
  2. To achieve the high impedance required specially designed "electrometer" vacuum tubes, field effect transistor must be used in the input stage.

    為適應高阻抗需要，儀器輸入電路中須用特殊設計的靜電計專用電子管、場效應晶體管。
  3. Metal semiconductor field effect transistor mesfet

    金屬半導體場效應管
  4. Bigfet bipolar isolated - gate field effect transistor

    雙極型絕緣柵
  5. Modulation doped field effect transistor modfet

    調制雜場效應管
  6. Jfet junction type field effect transistor

    結型場效應晶體管
  7. Carbon nanotube field effect transistor

    電界?果
  8. Fet field effect transistor

    場效應晶體管
  9. Field effect transistor

    場效應電晶體
  10. Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits

    半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。
  11. Abstract : by theoretical analysis and experiment, it has been proved that injection photodetector is not a mos field effect structure

    文摘:通過理論分析和實驗證明了注入光敏器件並不是一種mos場效應結構，對文獻[ 9 ]中得出的不同的結論和所討論的問題闡述了自已的見解。
  12. Unipolar field effect type transistor

    單極場效應晶體管
  13. Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors

    現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。
  14. The key parts of barretter are made of irf840 field - effect transistor, the magnetic ring and high frequency choking coil which adopting negative temperature index. such components can provide barretters a wide applicable voltage 160v - 250v. low power consumption, minor temperature rise, stable functions, long life - span

    鎮流器核心元件採用irf840場效應三極體，磁環及高頻扼流圈採用負溫系數，這樣的元件選擇使整流器適用電壓范圍寬160v - 250v ，功耗低，溫升小，性能十分穩定，確保其擁有很長的壽命。
  15. Magnetism and crystalline electric field effect of rare earth compound tbnial

    4的磁性和晶場效應研究
  16. Local electric field effect

    局部電場效應
  17. The degradation of the electrical characteristics in sic pn junctions irradiated by neutron is attributed to the recombination centers and the electric field effect on the thermal emission of traps within the depletion region. the relationship of the ideality factor to the applied voltage is theoretically studied

    提出了中子輻照下sicpn結電特性退化的新的理論， pn結耗盡區中的輻照陷階在耗盡區電場的作用下熱發射效應得到加強，從而導致pn結正偏和反偏時的復合電流和產生電流的改變。
  18. Analysis of field effect theory and knowledge sharing process

    場效應理論與知識共享過程分析
  19. Strength - the strength of the field effect

    強度-場的影響強度。
  20. Comparing to a - si tft, p - si tft has the merits such as high field effect mobility, high integration and high speed, high definition display, n channel and p channel capability, low power consumption and self - aligned structures. with these good characteristics, p - si tft lcd could provide brighter and stable image

    相對于a - sitft ， poly - sitft有其明顯的優勢:高遷移率、高速高集成化、 p型和n型導電模式、自對準結構以及耗電省、解析度高等優點，能夠提供更亮、更精細的畫面。
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