film bonding 中文意思是什麼

The diffusion welding behavior of single - crystalline cu to single - crystalline - aio with a nb film interlayer and the joint microstructure properties were studied by tem, sem / eds analyses and four - point bend testing. the nb film interlayer deposited by electron beam evaporation on the ceramic side prior to diffusion welding was found to be olycrytalline and fiber - textured after diffusion bonding, with the close - packed plane ( 110 ) being parallel to the ( 0001 ) basal plane of - aio

擴散連接技術是一門邊緣科學，涉及材料、擴散、相變、界面反應、接頭應力應變等各種行為，工藝參數多，雖然已經進行了大量的試驗研究，但卻對各種材料的連接機理尚未有明確的認識，為此人們試圖藉助于計算技術，對接頭行為進行數值模擬，以便找到共同規律，對擴散連接過程及質量進行預測與實時控制。

Copper has been deposited on surface of the al mmcs as interlayer by magnetron sputtering, tlp bonding of al mmcs with these interlays, the joints shear strength of tlp bonding using deposited film was as much as the joint shear strength of tlp bonding using cu foil. removing the oxidation on the surface before deposition, copper was coated by magnetron sputtering as tlp bonding interlayer

待連接表面通過磁控濺射法沉積銅膜作為中間層進行瞬間液相連接，得到的接頭強度與銅箔中間層進行瞬間液相連接得到的接頭強度相當，而使用磁控濺射法去除待連接表面氧化膜后沉積銅膜作為中間層進行瞬間液相連接的接頭強度提高7 . 6左右。

In the dissertation, the effects of the air slide - film damping on the capacitive accelerometers having different slot structures which are completely or partly etched, and fabricated by the anodic bonding between silicon and glass and bulk silicon micromachining process are researched by changing the distance between the moving structure and substrate, the thickness of the structure, the width of the completely etched slot structure, the depth of the partly etched slot structure according to the two well known air slide - film damping models

對于橫向運動的體微機械器件，其周圍空氣表現為滑膜阻尼。本文基於滑膜阻尼的兩個模型，通過改變振子與襯底的間距、振子的厚度、刻透的柵槽的寬度、沒有刻透的柵槽的深度等參數，研究了這些參數對硅?玻璃鍵合工藝製作的體硅微機械電容式傳感器阻尼特性的影響。

By film thickness measured, fourier transformed infrared spectrometer ( ftir ) analysis, x - ray photoelectron spectroscopy ( xps ) analysis and relative irradiance measurement, the effect of microwave input powers on deposition rates, f / c ratios, bonding configurations of ct - c : f films and the radicals in plasma originating from source gases dissociation is analyzed

由於微波功率的改變會導致等離子體中電子溫度和等離子體密度發生變化，從而造成不同的源氣體分解過程，結果微波功率的升高導致了薄膜沉積速率的提高、 f / c比的降低，同時也導致薄膜中cf和cf _ 3基團密度的降低，而保持cf _ 2基團密度接近常數。

The product is two layers of limpness composite material of polyester thin film coated with bonding agent and single surface bonding of calendaring aromatic polyamide fiber paper

該產品是由聚酯薄膜塗以膠粘劑，單面粘合軋光聚芳酰胺纖維紙而成的二層柔軟復合材料。

Effect of bonding state between titanium interlayer and cemented carbide substrate on the adhesion of cvd diamond film

鈦過渡層與硬質合金基體表面結合狀況對金剛石薄膜附著力的影響

The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。

For example, the silicon is etched anisotropically in the koh solution, the lucent al film is made with the magnetron sputtering system, the pressure hole is drilled by the supersonic stiletto machine and the silicon and the glass are bonded with electrostatic bonding setup

例如， koh溶液對硅的各向異性腐蝕，磁控濺射臺製作光亮的鋁膜，超聲打孔機製作導壓孔，靜電鍵合裝置對硅島膜與玻璃極板的陽極封接等等。

The product is made with 6020 polyester thin film coated with bonding agent, and compounded with insulation paper

該產品是有6020聚酯薄膜塗以粘合劑再與絕緣紙復合而成。

Application analysis and research on drum bubble method for quantitative measurement of bonding strength of diamond film silicon interface

硅基界面結合強度定量測量中的應用分析與試驗研究