film waveguide 中文意思是什麼

film waveguide 解釋
薄膜波導管
  • film : n 1 薄層,薄膜;薄霧,輕煙;細絲狀的東西。2 【攝影】感光乳劑,照相軟片,電影膠片;影片。3 〈 pl ...
  • waveguide : 【電學】波導(管)。
  1. A coplanar waveguide tunable bandpass filter using ferroelectric thin film

    基於共面波導傳輸線的鐵電薄膜可調帶通濾波器
  2. Because of the restriction of the performances of the infrared materials, we decide that the hollow waveguide should have the structure of single layer dielectric coated metallic film according to the general analysis of process controllability and transmission capability. the dielectric we choose is silver iodide, made from silver and iodine, and the optimum thickness is about 0. 77um

    因材料性能的限制,通過傳輸性能以及工藝可控性綜合分析,確定製備的空芯光纖為單層電介質塗覆金屬膜結構,電介質膜定為碘化銀,理論厚度為0 . 77 m左右,由銀膜直接碘化得到。
  3. The processes include the deposition of the waveguide film, the design and fabrication of the mask pattern, the lithography, the metal coating with a magnetic sputtering, the lift - off process for the metal mask, the dry deep etching by icp, the slicing of the wafer, the polishing of the cutting edge, the fiber - to - waveguide alignment and at last, the performance testing. some edg chip samples are fabricated

    對設計好的集成波導器件,本論文設計並試驗了器件的製作的全部工藝,包括波導薄膜的沉積,掩模的設計製作,光刻,濺射金屬薄膜,剝離法製作金屬掩模,干法深刻蝕,矽片切割,端面磨拋,波導對準和性能測試。
  4. When the two layers of sio2 with different refractive index are finished, the designed mask pattern is printed on the film by photolithography. after that, icp is performed for dry etching, then, the waveguide structures are obtained. at present, the rudimental graph of edg has been obtained

    兩層不同折射率的sio _ 2薄膜制備好之後,經過光刻、等離子體刻蝕( icp )的工藝步驟之後,形成了波導結構,初步製作出了器件的圖形。
  5. Both the dielectric layer and metal film were internally deposited on the fiber. it is found that ag is able to engender the highest ir reflectivity among the metal materials, so ag is ascertained as the metal layer material of the hollow waveguide, cop was used in this work as the dielectric material. based on countless calculations, optimum thickness for the deposited films were obtained, namely, 0. 2 / / m for ag layer and 1. 4 fan for the cop layer

    實驗用來制備空芯光纖的基管材料為石英基管;內徑為1mm ;通過理論推導與分析發現:相對于其它的金屬材料而言,金屬銀的紅外反射率最高,因此金屬銀最適合用做制備空芯光纖的金屬膜層的材料;通過比較幾種聚合物的性質確定選擇環烯聚合物cop為電介質層材料;通過理論推導與計算確定了金屬銀膜與電介質膜的最佳理論厚度,即銀膜為0 . 2 m , cop膜的厚度為1 . 4 m 。
  6. Silver film electro - migration ion exchanged technology has been designed to make optical waveguide

    實驗上採用銀膜電場輔助離子交換方法製作玻璃波導。
  7. The mode refractive index of 632. 8nm wavelength, which propagates in ion - exchanged planar waveguides, is obtained by m line technology ; the serious problems of silver film ion - exchange also be pointed out. the refractive index profile of planar waveguide is obtained with inverse wentzel - kramer - brillouin method by measured mode refractive index. finally, some improvements of silver film ion - exchange is put forward

    最後介紹了銀膜電場輔助法制備光波導的試驗過程,對實驗獲得的參數進行了分析和計算,得到了波導的模折射率和折射率變化的函數曲線,隨后對在試驗過程中遇到的一些問題和現象進行了闡述,分析了其產生的原因,並提出了自己的觀點和改進的辦法。
  8. Today, the most common multi / demultiplexers have fallen into three categories : thin - film filters, fiber bragg gratings and planar waveguide multi / demultiplexers. awg, is the research object in this thesis

    目前,光波分復用器主要分為以下三類:薄膜干涉濾光片、布拉格光纖光柵和平板光波導型波分復用器。
  9. Sbn has currently being investigated as a potential material for many microdevice applications such as pyroelectric infrared detectors, electrooptic modulators, dram, etc. with the rapid development of the optical communication industry, especially the development of integrated optical devices, a successful hetero - epitaxial growth of the film on si substrate is necessary which can reduce loss in the waveguide effectively

    隨著光通訊產業的迅速發展,特別是集成光學的發展,迫切需要在硅襯底上生長擇優取向性好的鈮酸鍶鋇晶體,來有效地減少光在波導結構中的損耗。本論文探討了sbn薄膜的溶膠-凝膠( sol - gel )生長技術及其原理。
  10. Thin - film optical waveguide

    薄膜光波導
  11. Film optical waveguide

    薄膜光波導
  12. The numbers of multiplexing channels include 2, 32, 64, 256 and even larger. the technologies of wdm devices include thin film, fiber grating, hologram grating, arrayed - waveguide grating ( awg ), in which awg is considered to be the most promising dwdm device. soi ( silicon - on - insulator ) is a kind of applicable material

    波分復用器件是全光通信網路的關鍵器件,在光纖通信系統中起著重要作用, dwdm技術復用的路數從2路到現今的32路、 64路、 256路甚至更高。
  13. Distributed thin - film waveguide

    分佈薄膜波導
  14. In this paper, we computed and found the main parameter for facture of ti : linbo3 waveguide, by the function of ti diffusion profile in linbo3, and the waveguide mode ' s cut - off condition. the parameters include waveguide width : 8 m, titanium film thickness : 50 ~ 60nm, index change : 0. 006, diffusion temperature : 1050 and diffusion time : 9 ~ 10 hours

    本文從ti擴散特性和波導導模截止條件入手,計算並確定了製作單模ti linbo _ 3波導的主要參數,如:波導寬8 m , ti膜厚50 60nm ,擴散溫度1050 ,擴散時間9 10h等。
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