flash eeprom 中文意思是什麼
flash eeprom
解釋
閃速電可擦寫存儲器-
Furthermore, based on the proposed new charge pump circuit, a iv to 3. 3v high voltage generator which is used in analog switch circuit and a 3v to 10v high voltage generator which is applied to eeprom or flash memory are designed, the components and design thought of two high voltage generators are also discussed in detail. and the simulations of two high voltage generators are accomplished by tsmc 0. 18uw cmos technology ( t018u ), the outcome testifies that two high voltage generators that take the new charge pump as the core circuit have the higher performance
此外，基於新型的電荷泵電路，設計了用於模擬開關電路的1v到3 . 3v的高壓產生系統和用於flashmemory的3v到10v的高壓產生系統，詳細討論了兩種高壓產生系統的電路組成和設計考慮，並用臺積電0 . 18 mcmos工藝（ t018u ）對兩種高壓產生系統進行了hspice模擬，結果表明以新型電荷泵電路為核心的兩個高壓產生系統都具有較高的性能。 -
Different voltages are needed for erasing and reprogramming of eeprom, while flash memory requires only a single power supply voltage, and consume less power in the operation
閃光記憶裝置有較棒的密度，導致較高的能力和每一點點較低的費用。 -
It includes ik - byte ram, 512 - byte eeprom and 16k - byte flash. it is rapidly extended and applied by its characteristics of high - speed and hardly possible lost
Atmega161具有1k位元組ram ， 512位元組eeprom ， 16k位元組flash ，並憑借其高速，非易失性的特點而被迅速推廣應用。 -
The primary difference between eeprom and flash is the removal of the ability to erase at the byte level
Eeprom和flash的主要區別是以位元組為單位擦除內存的能力。
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