gaas 中文意思是什麼

gaas 解釋
砷化鎵
  1. Gaas solution for cable tv network upgrade

    為電纜電視網路系統改造提供的砷化鎵方案二
  2. Design of high brightness cubic - gan led grown on gaas substrate

    發光二極體的工藝設計與實現
  3. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  4. In this thesis, mainly by fmr, combined with moke and magnetic measurement, systematical studies have been made on the magnetic properties, especially magnetic anisotropy in epitaxial single crystalline fe ultathin films on gaas and inas substrates in polycrystalline thin films and in polycrystalline nife and nifeco patterned films of micron and submicron rectangular elements arrays

    本論文以鐵磁共振為主要研究手段，輔助以磁性和磁光測量，對外延于gaas及inas上的不同厚度的單晶fe超薄膜、不同厚度的nife多晶薄膜和電子束光刻的多晶nife和nifeco單層利三明治結構的微米及亞微米矩形單元陣列圖形薄膜的磁性，特別是磁各向異性進行了較為系統的研究。
  5. Moke and fmr studies were performed on single crystalline fe ultathin films epitaxially grown on iii - v semiconductor gaas substrate with thickness 4. 1 - 33 monolayer ( ml ). a theoretical mode for fitting fmr experimental data was established. the results demonstrated the structures and reproduced the evolution of the magnetic properties of ultrathin films with various thickness from the state of superparamagnetic nano - cluster through coexistence of two magnetic phases to continuous film, especially the change of magnetic crystalline anisotropy from unixial to cubic

    1 - 33原子層厚度（ monolayer ，簡稱ml ）的fe單晶超薄膜進行了鐵磁共振（ fmr ）和磁光研究，建立了理論模型對鐵磁共振實驗結果進行了模擬，重現了不同厚度的超薄膜，從納米團簇到兩相共存的過度階段直至連續薄膜結構與磁性的變化，特別是磁各向異性從單軸各向異性向立方各向異性轉變的演化過程。
  6. A novel multi - octave gaas monolithic 5 - bit digital phase shifter

    單片五位數字移相器
  7. Research on thermal cleaning technique for gaas photocathode

    Gaas光電陰極熱清洗工藝研究
  8. An investigation of transient photoconductive effects of gaas pcss ' s

    光導開關瞬態光電導效應的研究
  9. Ultra - wideband electromagnetic radiation from gaas photoconductive switches

    光電導開關的超寬帶微波源
  10. At present, this kind of gaas photoconductor detector has had practical value. it can detect x - ray, gamma - ray, laser pulse successfully

    目前，我們研製的gaas探測器已具有一定的實用價值，可用在室溫下對x射線、射線、激光脈沖進行探測。
  11. Photoelectron diffraction studies on gaas surface by energy scan mode

    面能量掃描的光電子衍射研究
  12. ( 2 ) on - line spectral response measurement is used to make a research on the activation process. the on - line measurement results have been analyzed and the influence excised by cs, o activation on the photoemission property of gaas wafers has been revealed. the properties of domestic and foreign nea phocathodes are compared, and the reasons causing the gap between domestic and foreign phocathodes are discussed

    （ 2 ）利用光譜響應在線測試技術研究nea光電陰極的激活工藝，通過對在線測試的光譜響應曲線進行分析、比較和計算，剖析了激活工藝給陰極光電發射性能帶來的影響，並從性能評估的角度，比較了國內外nea光電陰極的性能，分析了它們之間存在差距的原因。
  13. Duo to the intrinsic characteristics of the gaas material, serai - insulating ( si ) gaas photoconductive semiconductor switches ( pcss " s ) have more obvious advantages in the performance of both high power and ultra - fast switching than those pcss " s made of other materials and then can be widely used in ultrahigh speed electronics, field of high power microwave generation and pulse forming ( pulse sources of high power ultra - fast electromagnetism, ultra - wide - band microwave generator )

    半絕緣gaas光電導開關（ photoconductivesemiconductorswitches簡稱pcss ' s ）具有兼備寬頻帶和高功率容量特性，使其在超高速電子學和大功率脈沖產生與整形技術領域（大功率亞納秒脈沖源、超寬帶射頻發生器等）具有廣泛應用前景。
  14. For the first time, an integrated hall switch based on gaas mesfet process was fabricated

    論文首次採用gaas直接離子注入mesfet集成電路工藝，研製出了gaas霍爾開關集成電路。
  15. At present, the solar cells used on space aircrafts are still mainly si and gaas solar cells. however, the radiation resistance ability of these two materials is poor. since the photoelectric conversion efficiency attenuates rapidly with the radiation, the lifetime of si and gaas solar cells is short and their stability is not satisfied for space applications at van allen belt

    目前國內外用於航天器上的太陽電池主要為si和gaas太陽電池，但這兩種材料的抗輻射能力較差，其光電轉換效率由於高空輻射衰減很快，因而壽命短，穩定性差，不能滿足用於vanallen強輻射帶的空間應用需要。
  16. Gaas varactor diode

    砷化鎵可變電抗二極體
  17. Semiconductor discrete device. detail specification for gaas varactor diodes for 2ec600 series

    半導體分立器件. 2ec600系列砷化鎵變容二極體詳細規范
  18. The inherent defects and limitations of the conventional gaas / algaas qwips, which are lead by the structure, were analyzed

    分析了常規gaas algaas量子阱紅外探測器由於其結構所帶來的固有缺點及限制。
  19. 3. the principle of the novel gaas / algaas qwips and the strongpoints of the new structure were elucidated in detail

    詳細敘述了新型gaas algaas量子阱紅外探測器的工作原理及這種新型結構所帶來的諸多優點。
  20. For the algaas / gaas vcsel fabrication, oxide - confined structure provid electrical and optical confinement. algaas / gaas vcsel fabricated by selective oxidation and selective etching

    在vcsel器件研製方面，我們採用氧化物限制結構來對其的電流和光場進行限制。
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