gallium arsenide 中文意思是什麼

gallium arsenide 解釋
砷化鎵〈一種合成化合物，主要用作半導體材料〉。

  1. Test method for ga as ratio of surface of gallium arsenide

    砷化鎵表面鎵砷比的測試方法
  2. Boat - grown gallium arsenide single crystals and as - cut slices

    水平法砷化鎵單晶及切割片
  3. Test method for thermal stability testing of gallium arsenide wafers

    砷化鎵晶片熱穩定性的試驗方法
  4. Gallium arsenide single crystal - determination of dislocation density

    砷化鎵單晶位錯密度的測量方法
  5. Gallium arsenide injection laser

    砷化鎵注入雷射
  6. Meaning you could take a simple aluminum gallium arsenide laser and -

    也就是說，只要拿一個簡單的砷化鋁鎵激光器和
  7. Aluminium gallium arsenide, algaas

    砷化鎵鋁
  8. Meaning you could take a simple aluminum gallium arsenide laser and - -

    也就是說，只要拿一個簡單的砷化鋁鎵激光器和. .
  9. Measuring thickness of epitaxial layers of gallium arsenide by infrared interference

    砷化鎵外延層厚度紅外干涉測量方法
  10. Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices

    液封直拉法砷化鎵單晶及切割片
  11. Test method for sub - surface damege of gallium arsenide polished wafer by x - ray double crystal diffraction

    砷化鎵拋光片亞損傷層的x射線雙晶衍射試驗方法
  12. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
  13. Testing of materials for semiconductor technology - determination of dislocations in monocrystals of iii - v - compound semi - conductors - part 1 : gallium arsenide

    半導體工藝材料的檢驗. -化合物單晶體錯位的測定
  14. Such an advance would enable engineers to incorporate both electronic and optical devices onto cheap silicon chips rather than being compelled to employ costly - to - make lasers based on “ exotic ” semiconductor materials such as gallium arsenide or indium phosphide

    如果成功，工程師就能在成本低廉的矽晶片上同時製作電子和光學裝置，不需使用砷化鎵或磷化銦等稀有半導體材料，製作成本高昂的半導體雷射。
  15. Test method for wavelength of peak photoluminescence and the corresponding composition of gallium arsenide phosphide wafers

    磷化砷化鎵片的最大光致發光波長及其相應成分的試驗方法
  16. Preparation of samples of the constant composition region of epitaxial gallium arsenide phosphide for hall effect measurements

    測量霍爾效應用恆定成分范圍的外延磷化砷化鎵試樣的制備
  17. Test method for crystallographic perfection of gallium arsenide by molten potassium hydroxide etch technique

    用熔融氫氧化鉀腐蝕技術測試砷化鎵結晶完整性的試驗方法
  18. Gallium - arsenide optical filter

    砷化鎵濾光片
  19. Test method for microzone homogeneity of semi - insulating monocrystal gallium arsenide

    半絕緣砷化鎵單晶微區均勻性測試方法
  20. Quantitative determination of ab microscopic defect density in gallium arsenide single crystal

    砷化鎵單晶ab微缺險密度定量檢驗方法
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