gate-to-source voltage 中文意思是什麼
gate-to-source voltage
解釋
柵極-
Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高 -
In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed
本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。 -
In order to do the research works above better, we must can precisely control the width of the quasi - 1d channel and the cut off point, and also must precisely inspire current in the 2deg, so we designed the 2 channel high precision and high stability voltage source, one channel can supply the minus voltage to the split - gate, and the other one can supply the offset voltage between the source and drain pole
為了進行上述研究，必須能夠精確的控制準一維電子通道的寬度和鉗斷，以及精確的在2deg上激勵電流，由此我們設計研發了給分裂門加負偏壓和給準一維電子通道加源漏偏壓的兩路高精度高穩定性饋源。 -
The emphases of our research works are as follows : under ultra - low temperature ( about 0. 236k ) conditions, how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts
研究的重點為，在甚低溫（ 0 . 236k ）下，通過實驗研究表面聲波的頻率和功率，源漏偏壓等因素對聲電電流的影響;研究準一維電子通道中不同源漏電流與分裂門負偏壓的關系，以找到分裂門的鉗斷點電壓;以及研究聲表面器件叉指換能器的頻率特性等。 -
Usually series mode is used in low frequency circuit while bypass mode is used in high frequency circuit, series mode micro - switch with cantilever structure is similar to an fet, when voltage is applied on gate, and the fet will be turned on between source and drain
有靜電電壓作用在梁和底面電極時，梁發生偏轉，在源極和漏極之間實現導通，常用於自控和通信系統的信號通路空氣橋旁路開關主要用於微波段信號的通路。 -
During the course of modeling ldmos, the paper puts forward the method in which maxwell function in the static system is applied in analysis compute of ldmos threshold voltage. schwarz - chritoffel transformation method is used to solve the gate self - capacitance with limited size. at the same time, it also provides the method which computes the drain and source self - capacitance by conformal transformation and the equivalent - voltage sharing - charge model
在對ldmos的建模過程中，本文提出了將靜電系統中麥克斯韋方程用於ldmos閾值電壓的分析計算的方法，引入了許瓦茲-克利斯多菲變換來求解了有限尺寸的柵自電容，並提出了用保角變換和等電壓電荷共享模型來計算漏與源的自電容的方法。 -
In this paper, a precise cmos bandgap voltage reference which uses the difference of mos source - gate voltage to perform efficient curvature compensation is described in detail, which is compatible with standard digital cmos process
論文詳細描述了一個運用標準數字cmos工藝實現的、採用mos管的柵源電壓差進行有效的溫度曲率補償的帶隙基準電壓源電路的設計。
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