glow discharge sputtering 中文意思是什麼
glow discharge sputtering
解釋
輝光放電濺射- glow : vi 1 灼熱；發白熱光；燃燒 〈cf blaze〉; 放光，發熱。2 （運動后）身體發熱；（面色等）發紅；（眼）...
- discharge : vt 1 發射（炮等），打（槍），射（箭）。2 起，卸（貨）。3 排泄，排出，放出（水等）。4 釋放；解除，...
- sputtering : 飛濺
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Dlc and a - sic : h films were prepared by the rf glow discharge and the reactive sputtering method respectively. there were two reasons that we chose y rays, ultraviolet ( uv ) photons, and neutrons as radiation sources. one is that y rays, uv photons and neutrons irradiation are serious at outer space and / or nucleus irradiation enviromentthe other is that the study on y rays irradiation on the films is a new and an important directioaotherwisejirnited reports have been made of the investigation on the uv photonsjieutrons irradiation influences on these films
本文分別採用射頻（ 13 . 56mhz ）等離子體cvd及射頻反應濺射方法制得了dlc及a - sic ： h薄膜。文中主要選擇y射線、紫外光及中子作為輻照源有兩方面的原因：一方面，在外層空間， y射線及紫外光輻射十分嚴重，而在核輻射環境下y射線及中子輻射也不可忽視；另一方面， y射線輻照這兩種薄膜完全是一項開創性的工作，同時國內外對紫外光子、中子與這兩種薄膜作用的研究也很少。 -
The main purpose of this article - is to simulate the whole process of the generation and transportation of the vapor phase particles of the film in rf magnetron sputtering, which contains transportation of ions in rf glow discharge, sputtering of target and transportation of sputtered atoms, via models that are established on the basis of the physics of sheath theory for the rf magnetron glow discharge, sputtering theory and transportation theory
本論文對射頻磁控濺射中入射離子的產生和輸運、離子對靶材的濺射、濺射原子的輸運過程進行了綜合考慮，根據射頻輝光放電的陰極殼層理論、粒子的輸運理論、離子對靶材的濺射理論建立模型，進行了計算機模擬。 -
1 、 the activated process of the metal halide lights is analyzed. the processes mainly include four - discharged stage : breakdown ? glow discharge sputtering ? the glow transition to the arc - - arc discharge sputtering
1 .分析了金屬鹵化物燈的啟動過程，金屬鹵化物燈的啟動過程主要包括:擊穿? ?輝光放電? ?輝光向弧光的過渡? ?弧光放電四個放電階段。 -
Through optimization of excitation parameters of the glow - discharge source and calculation of the sputtering rate of the certified reference materials, a method for the quantitative surface analysis of nc - si : h film was established
方法應用於實際摻雜納米硅薄膜樣品的分析，並將分析深度、剖析結果與表面形貌儀的結果進行了對照。
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