growth defect 中文意思是什麼

growth defect 解釋
生長缺陷
  • growth : n. 1. 生長,成長,發育,發展。2. 栽培,培養。3. 生長物,產物;【醫學】瘤,贅生物。4. 【經濟學】(資本價值與收益的)預期增長。
  • defect : n. 1. 缺陷,缺點,弱點;短處。2. 不足,缺乏。vi. 叛變;逃走。 He defected to the West. 他叛逃到西方。
  1. Reparation of peripheral median nerve defect with basic fibroblast growth factor combined with autogenous vein graft conduit

    堿性成纖維細胞生長因子結合靜脈套接修復正中神經缺損
  2. 2 a number of drastic mutations can produce this kind of dwarfism, ranging from a defect in a gene that releases growth hormone to defects in genes that result in damage to the pituitary gland 注 as a whole

    4多種劇烈的突變都可能導致這種侏儒癥,其中包括從釋放生長激素的一個基因的一個缺陷,到導致整個垂體損害的多個基因的多個缺陷。
  3. Comparing different eyebrow defect law, or under conditions allowing for the transplant to eyebrows, hair transplantation because of the growth will continue, which normally takes three days repair a brow

    比較不同的眉缺損修復法,在條件允許下還是以眉毛移植為好,因頭發移植后仍會不斷生長,一般需三天修一次眉。
  4. This article reviews the developments of studies in inorganic synthesis and preparative chemistry in vital aspects such as the extreme condition synthesis, soft chemistry, the preparation of specially condensed and aggregated materials, morphology and size modifying growth, defect and valence controlling, combinatorial chemistry, computer - aid design, ideal and biomimetic syntheses

    摘要本文從極端條件合成、軟化學合成、特殊凝聚態和聚集態制備、形貌與尺寸修飾、缺陷與價態控制、組合化學合成、計算機輔助合成、理想合成與生物模擬合成等幾個側面,闡述近年來無機合成與制備化學研究的進展。
  5. Temperatures(around 950℃)will prevent stress-induced defect formation in a recessed structure(recess approximately land oxide growth approximately 2. 2μm).

    溫度在950上下就會避免在有凹槽的結構中形成應力誘發缺陷(凹槽約1m,氧化物層生長約22m)。
  6. Main research contents and achievements of this thesis is as follows : l. this paper carries through particular test and analysis to the basic physical - chemical properties of gaojiawang palygorskite, an environmental mineral fibre, by xay, ir, tem, sem etc. this paper has also discoursed upon the development appliance research status in quo and directions of palygorskite. 2. according to the preceding surface modification research achievements to nonmetal mineral materials, the author combines the self characteristics of palygorskite such as the ratio of length and diameter, typical nano - rank particle diameter, big ratio surface area, well - developed crystal growth imperfection and lattice defect etc. the author also designs organising modification ortho - experimentation of palygorskite by adopting iso - propyl alcohol as thinner of wd - 51 and ndz - 401, and acquires the best craft parameters and craft conditions for gaojiawang palygorskite original ore organising modification, namely : wd - 51 concentration 1. 6 % ( wt % ), modification temperature 120 ?, and modification time 60 mins ; ndz - 401 concentration 2. 0 % ( wt % ), c modification temperature 120, modification time 80 mins

    在前人對非金屬礦物材料表面改性的基礎上,結合環境礦物纖維?坡縷石自身的特點(如:長徑比、典型的納米粒徑、大比表面積、發育的晶體生長缺陷和晶格缺陷等) ,通過對坡縷石有機化改性設計正交試驗,採用( ch _ 3 ) _ 2choh作為稀釋劑,獲得了採用wd - 51和ndz - 401對高家窪坡縷石原礦進行有機化改性的最佳工藝參數和工藝條件,分別為: wd - 51的濃度為1 . 6 ( wt ) ,改性溫度為120 ,改性時間為60min ; ndz - 401的濃度為2 . 0 ( wt ) ,改性溫度為120 ,改性時間為80min 。
  7. Treatment of bone defect with osteoblasts transfected by transforming growth factor - beta 1 gene in combination with biomimetic biodegradable polymer scaffolds

    1基因修飾成骨細胞復合仿生基質材料治療骨缺損
  8. The effect of many factors on the growth of thin films is especially analyzed and generalized, such as surface topography, structure defect of substrate, deposition temperature, and so on

    特別對基底的表面形貌、結構缺陷、沉積溫度等因素對薄膜生長影響的蒙特卡羅方法模擬的研究進展進行了分析和歸納。
  9. Proper gene expression and cell growth are critical for the development and survival of all organisms, and defect in their regulation may contribute to a variety of diseases including congenital heart disease ( chd ) and cancer

    基因的正確表達和細胞的正確生長對所有器官的發育和生存起關鍵作用,基因表達和細胞生長調控的異常將導致一系列疾病的發生,這其中包括先天性心臟病和癌癥。
  10. Ecr - pemocvd has an incomparable property that the growth of high quality gan thin film can be controlled in a low range of temperature from 400 c to 600 c. accordingly, the structure defect and thermal mismatch will be reduced

    Ecr - pemocvd法能夠在400 - 600的低溫下大面積生長gan薄膜,因此減少了晶格缺陷的產生。
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