growth parameters 中文意思是什麼

growth parameters 解釋
生長參數
  • growth : n. 1. 生長,成長,發育,發展。2. 栽培,培養。3. 生長物,產物;【醫學】瘤,贅生物。4. 【經濟學】(資本價值與收益的)預期增長。
  • parameters : 編輯特徵參數
  1. Field germination, nodulation status and growth parameters were varied significantly in the soil amended with sludges in comparison to control

    與對照幼苗相比,混合污泥的土壤中生長的幼苗田間發芽、分枝狀況及其他生長參數均發生了顯著變化。
  2. Field germination, nodulation status and physical growth parameters of seedlings ( shoot and root length, vigor index, collar diameter, leaf number, fresh and dry weight of shoot and root and total dry biomass increment ) were recorded after three and six months of seed sowing

    播種的3和6月後,記錄幼苗大田發芽、分枝狀況和其他物理生長參數(枝條或根長、活力指數、莖直徑、葉片數、分枝或根鮮重和干重、總的生物量干重增長)等。
  3. The reasons of cleavage in the crystal is analyzed and solved by strict control of growth parameters

    分析了晶體產生開裂的原因,採用嚴格控制生長參數的方法予以解決。
  4. And then, zno thin films were synthesize on quartz and silicon substrates by sol - gel dip - coating and spin - coating. the properties of the films and the effects of growth parameters on the quality of zno films were studied using x - ray diffraction, optical absorption, photoluminescence techniques, etc. to modify the energy gap of the zno, mg2 + was added in the sol - gel solution, and mgxzn1 - xo films were prepared by the same method as that for zno films

    利用溶膠凝膠法成功地在石英玻璃和單晶矽片等襯底上制備出了c軸擇優取向的zno薄膜,並利用x射線衍射儀、紫外-可見光光譜儀、熒光光譜儀等對zno薄膜的結構和性能進行了測試、分析,並研究了熱處理參數等條件對zno薄膜性能的影響。
  5. Advances in growth parameters and kinetic studies are also discussed

    還討論了生長參數和動力學方面取得的進展。
  6. Standard test method for determination of slow crack growth parameters of advanced ceramics by constant stress - rate flexural testing at ambient temperature

    利用室溫下用常應力率彎曲試驗測定高級陶瓷的裂紋緩慢生長參數的標準試驗方法
  7. The growth parameters have been optimized comprehensively to include the operation of the machine, character of precursors, the techniques especially for gaalinp material growth and the substrate processing

    在對外延設備,源材料的性質,外延材料的特性,外延技術充分了解和深入研究的基礎上,設計出各材料的生長參數。
  8. Effect of growth parameters on photoluminescence of room temperature and low temperature ( 10k ) was studied

    本文研究了生長條件對ingaas室溫和低溫( 10k )光致發光譜的影響。
  9. Water steam was used as oxidant, and the optimum water steam partial pressure is between 1 10 - 4 and 5. 5 10 - 4 pa. under the optimum growth parameters, a ceo _ 2 seed layer with highly textured degree was successfully prepared. beside the one step process was experimented in this dissertation, the two step process was proposed and studied to further improve the quality of ceo _ 2 seed layer. in the two step process, about 15 nm thick of ce metal layer was deposited on metallic substrate at the first step, then water steam was introduced in the chamber, and the ceo _ 2 thin films were subsequently deposited with reactive sputtering in the

    總結出沉積ceo _ 2薄膜的優化工藝條件,當沉積溫度為720 - 850 、水蒸汽分壓介於1 10 - 4 - 5 . 5 10 - 4pa之間、退火時間40min時,獲得了織構程度良好的ceo _ 2種子層薄膜; 3 .由於一步法制備ceo _ 2種子層中水分壓范圍狹窄,工藝條件難以控制,並且退火延長了薄膜的制備時間,因此,本論文又採用了兩步生長法沉積ceo _ 2種子層,即:先在ni - w基帶上沉積一層約15nm的金屬ce薄膜,再通入氧化氣氛(水蒸汽) ,繼續進行薄膜沉積。
  10. The effect of growth parameters on the morphology, structure and chemical compositon of sic whiskers have been characterized by x - ray diffraction ( xrd ), scanning electron microscope ( sem ), energy dispersive x - ray spectroscopy ( eds ) and transmission electron microscope ( tem )

    運用x射線衍射( xrd ) 、掃描電子顯微鏡( sem ) 、電子能量色散譜( eds ) 、透射電子顯微鏡( tem )等表徵手段,系統研究了工藝參數對sic晶須形貌、結構和化學成份的影響。
  11. By changing the negative bias current density, gaseous ratio and total pressure, nanocrystalline diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied. the diamond film presents very low compressive stress and excellent field emission character

    採用離子輔助轟擊法,以ch _ 4 、 h _ 2為源氣,襯底溫度為700 900 ,通過改變襯底負偏壓、 h _ 2和ch _ 4氣體比例以及工作氣壓,制備出納米金剛石薄膜,並對工藝參數對金剛石薄膜沉積的影響進行了研究。
  12. The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried

    採用等溫退火法(或稱「一步法」 )沉積ceo _ 2 ,即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜,再在與沉積溫度相同的溫度下對薄膜進行退火處理,系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。
  13. With optimized buffer layer growth parameters, gan epilayer with improved quality has been grown, whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin

    以優化的緩沖層生長條件得到質量有明顯改善的gan外延層, gan薄膜的( 0002 )面雙晶dc - xrd掃描的半高寬為6arcmin 。
  14. Advanced technical ceramics - monolithic ceramics - mechanical properties at room temperature - determination of subcritical crack growth parameters from constant stressing rate flexural strength tests

    高技術陶瓷.整體陶瓷.室溫機械性能.用固定應力率的彎曲強度試驗測定亞臨界裂紋增長參數
  15. Standard test method for determination of slow crack growth parameters of advanced ceramics by constant stress - rate flexural testing at elevated temperatures

    高溫下用恆定應力速度撓曲試驗測定高級陶瓷的慢裂增長系數的標準試驗方法
  16. Advanced technical ceramics - mechanical properties of monolithic ceramics at room temperature - part 3 : determination of subcritical crack growth parameters from constant stressing rate flexural strength tests ; german version en 843 - 3 : 2005

    高級工業陶瓷.室溫下整體陶瓷的機械特徵.第3部分:恆
  17. Advanced technical ceramics. monolithic ceramics. mechanical properties at room temperature. determination of subcritical crack growth parameters from constant stressing rate flexural strength tests

    高技術陶磁.整體陶磁.室溫下的機械性能.第3部分:從恆定應力率撓性強度試驗中測定亞臨界裂縫擴大參數值
  18. We have studied the influence of growth parameters of buffer layer under large flux of reactant materials and found that parameters such as v / ratio, growth temperature and ammonia flux during annealing have evident influences on the growth of buffer layer, while other parameters like growth pressure, pressure during annealing and ramping rate show little influence

    在大源流量流下,研究了gan緩沖層各生長參數的影響規律,發現對緩沖層生長影響顯著的條件有生長比、生長溫度、退火時的氨氣流量。而緩沖層生長壓力、退火壓力及退火時間的影響相對較小。
  19. In this thesis, we will focus on the nanotube structure and synthesis, including disorder multi - wall carbon nanotube, aligned multi - wall carbon nanotube array, cnx nanotube, and bcn nanotube. the effects of growth parameters, which provide scientific basis for pyrolysis of carbon nanotube, were studied systematically. furthermore, layered aligned multi - wall carbon nanotube arrays separate by catalyst particles were synthesized on the surrounding of reaction quartz tube by injection of xylene - ferrocene for the first time, which provided a chance for the accurate measure and potential use of carbon nanotubes

    在對碳納米管制備的基礎上,全面系統地研究了碳納米管的影響因素,對熱解法制備碳納米管確定了可供參考的制備工藝參數,在些基礎上,首次成功地直接在反應爐內石英管壁上直接生長分層生長的定向碳納米管,為納米管的性質的測量提供了一定的基礎,而且為定向碳納米管在微電子學領域的應用提供可能性,能成功地實現定向納米管的固定長度生長。
  20. Layered carbon nanotube with special length could be synthesized with this method. cnx nanotube and bcn nanotube were obtained with ethylenediamine as nitrogen source, and the growth parameters were screened at the same time. we found that the value of id / ig, id * / ig and fwmh of three bands could be used to estimate the degree of disorder

    無序多壁碳納米管的研究:在以二甲苯為碳源,以ar (或n _ 2 )和h _ 2為保護氣體,採用單級加熱的方法制備碳納米管的基礎上,著重優化了熱解法制備碳納米管時的工藝參數。
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