growth temperature 中文意思是什麼

growth temperature 解釋
生長溫度
  • growth : n. 1. 生長，成長，發育，發展。2. 栽培，培養。3. 生長物，產物；【醫學】瘤，贅生物。4. 【經濟學】（資本價值與收益的）預期增長。
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  1. Isolate all grew well in the culture medium with initial ph 4 - 10, the optimal growth temperature range was from 28 to 30. 5 degree c. it grew well on the medium for fungi growth, such as pda medium and czpek medium etc, and also grew well on the cause ' s i medium and the non - nitrogen medium, but little growth on the luria bertani medium ( lb ) and beef extract peptone medium. it did not need special nutrition factors for growth, but source of the carbon was the key factor to growth, all of its nutrition needs were different from that of common bacteria

    該菌在初始ph4 - 10的培養基中都能夠生長，生長最適溫度范圍為28 - 30 . 5 ，在pda 、查氏等真菌培養基中生長旺盛，在高氏1號和無氮源培養基中同樣生長良好，而在lb與牛肉膏蛋白腖等細菌培養基中生長很差，碳源是其生長的關鍵因子，這有別於一般細菌的營養需求。
  2. Seed culture conditions of bacillus licheniformis ts - 01 were firstly investigated. the results showed that the optimal growth temperature was 40 c ; the suitable seed culture medium was beef extract soya peptone medium ; the optimal initial ph was 7. 5 ; the optimal seed culture time was 13h ~ 14h

    首先對地衣芽孢桿菌ts - 01的種子培養條件進行了研究，得到的結果為：最適生長溫度為40 ；較適合的種子培養基為牛肉膏大豆蛋白腖培養基；最適初始ph值為7 . 5 ；種齡為13h 14h 。
  3. The template must also show the proper size and aspect ratio, otherwise, the template particles must be stable with the matrix at the desired growth temperature and environment

    模板顆粒必須具有和pmn - pt類似的晶體結構和晶胞參數；模板顆粒必須具備足夠大的徑高比。
  4. We studied the factor that influence the quality of gaas, algaas and ingaas by mbe, and studied the growth temperature, growth time and the flux ratio of v - iii beam

    研究了影響mbe生長gaas 、 algaas和ingaas等單晶材料質量的一些因素，對mbe生長溫度、生長時間和生長時的-族束流比進行了研究。
  5. In addition, the growth temperature of films in high substrate temperature process is more similar to that of the single crystal growth in which the hexagonal system shows the sheet growth habit

    高溫下的薄膜生長更接近於單晶的生長條件，六角晶系晶體的結晶習性是片狀生長，表現為片狀的單晶，這種習性受晶體自身結構特性的限制。
  6. The experiments show : growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced

    實驗表明：生長溫度是一個重要的生長參數，它對外延層的表面形貌、組分、結晶質量、遷移率、載流子濃度有著很大影響。
  7. The acrystalliferous and plasmid - free derivatives of bacillus thuringiensis were screened with ethidium bromide treatment, elevating growth temperature from 42 to 44 then to 46 by degrees, and treating it with 0. 05 % sodium docecyl sulphate ( sds ) as the plasmid - curing agent at 46

    分別用溴化乙錠誘變處理、逐級升溫培養以及用sds處理等三種方法對蘇雲金芽胞桿菌無晶體（ cry ~ - ）和無質粒突變株進行了篩選研究。
  8. It indicats that the growth temperature, annealing temperature and time greatly affects the quality of mgb

    超導薄膜表面形貌晶體結構超導電性的影響。
  9. The other has two metal - insulator - semiconductor ( ms ) contacts with lower leakage current ( less than 4 pa, 300v ) and better energy resolution ( about 10 % fwhm for 241am 59. 5kev line ) and poor working stability. in theoretical studies, the analysis on the phase equilibrium in the vapor growth of cdse single crystals shows that the stoichiometry of cdse crystals can be controlled effectively by controlling the stoichiometry of starting materials and the vapor growth temperature. besides, the investigation of the transporting properties of charge carries in cdse detectors indicates that the noise in energy spectrum detected by using the detectors with msm structure is caused by the hole injection, which is induced by electron injection and the light injection

    本文把cdse單晶體的生長、單晶體的成分、單晶體的性能以及單晶體在室溫核輻射探測器中表現出來的性能結合起來進行了比較系統的研究；採用垂直無籽晶氣相提拉法生長出了電阻率為10 cm量級、尺寸為中10mm 30mm的單晶體；制備出了能量解析度達10 （ fwhm ） （對~ （ 241 ） am59 . 5kev譜線而言）的cdse室溫核輻射探測器，取得了較好的研究結果。
  10. The growth temperature was 518 “ c, as probed by a profile thermocouple located inside the reactor

    生長溫度在518c ，由位於反應腔下的熱電耦檢測。
  11. Its optimum growth temperature was at 32, and the optimum growth ph was at ph 5

    其最適生長溫度為32 ，最佳生長ph值為5 。
  12. The effects of the growth temperature and duration on the growth of aligned carbon nanotube array were studied with the help of sem and tem

    為了優化定向碳納米管陣列的制備，對生長溫度及生長時間進行了研究。
  13. Its growth temperature range is from 6 to 40 and optimum temperature range is about 24. when the temperature is reduces to 22 immediately ( from 35 to 13 ), it can still grow. after it is frozen at - 18, it still can restore to life, which is a feature that other spirulina do not have. compared with the introduced spirulias platensis, it shows low temperature characteristic and wide temperature ecological amplitude

    其生長的溫度范圍是6 - 40 ；最適溫度為24左右；在溫度驟降幅度達22時（從35降到13 ）依然能夠生長；該藻在- 18冰凍之後依然可以復生；其對低溫的適應特性是引進的鈍頂螺旋藻和極大螺旋藻所不具備的。
  14. The experiments show that the reaction temperature significantly influenced the alignment of the mwnts, and an appropriate reaction temperature for growth was 800c ~ 900c. the diameter of the carbon nanotube increased a little with the growth temperature

    試驗表明，反應溫度對定向碳納米管的形成具有決定性的影響，較適合定向碳納米管生長的溫度區域為800 900 ，隨反應溫度的升高，碳納米管的直徑略有加大。
  15. In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %

    通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。
  16. There is no acrystalliferous derivative was screened after treating 4. 5 g / ml ethidium bromide, but after elevating growth temperature of ybt - 1463 and other 8 bacillus thuringiensis parental strains to 42, 9 acrystalliferous derivative were obtained. a series of partially plasmid - cured derivatives were further obtained from 3 acrystalliferous derivatives originated from wild - type strain ybt - 1463 by elevating temperature to 44

    用限量培養基和42培養9株野生菌株，結果篩選到9株cry ~ -突變株；繼續升溫至44來培養其中的三個cry ~ -突變株，得到內生質粒被進一步消除的突變株。
  17. Reflective index n and extinction coefficient k increase with growth temperature, transmittance is about 80 % in the wavelength of 450 - 800 nm

    Bst薄膜在可見光范圍內透射率約83 %左右，透射率受薄膜組分的影響。
  18. We have studied the influence of growth parameters of buffer layer under large flux of reactant materials and found that parameters such as v / ratio, growth temperature and ammonia flux during annealing have evident influences on the growth of buffer layer, while other parameters like growth pressure, pressure during annealing and ramping rate show little influence

    在大源流量流下，研究了gan緩沖層各生長參數的影響規律，發現對緩沖層生長影響顯著的條件有生長比、生長溫度、退火時的氨氣流量。而緩沖層生長壓力、退火壓力及退火時間的影響相對較小。
  19. Many factors which affect the epitaxy qualities, especially the porosity of porous silicon and growth temperature, have been studied in detail. it is found that the pre - oxidation of porous silicon can efficiently prevent the boron diffusion during epitaxy. the defaults along { 111 } are the main defects in epitaxial silicon layer

    深入研究了影響外延的各種因素，特別是多孔硅的孔隙率和外延溫度對外延層質量的影響，發現多孔硅的預氧化可以有效地阻止外延時b的擴散，外延層中主要的缺陷是沿著{ 111 }面生長的層錯。
  20. The effect of growth temperature, catalyst, and content of ferrocene were studied systematically with the help of tem. the " nanobelt " nanotube became to " bamboo - shaped " nanotube with the increase of growth temperature

    系統地研究了制備溫度、催化劑、不同催化劑配比時最佳制備溫度、鉆與二茂鐵的催化活性比較、 nz及玩對制備bcn納米管的影響。
分享友人
分享到 Line

分享到臉書