h post 中文意思是什麼

h post 解釋
h形柱
  • h : = 【電學】 henry; 【化學】 hydrogen; 【物理學】磁場密度 (intensity of magnetic field) 地磁水平...
  • post : n 1 (被指定的)地位,崗位;職位,職守。2 【軍事】哨所,站;哨兵警戒區;〈轉義〉哨兵,衛兵。3 基...
  1. Using the mouse fetal ovary serum - free culture model, fetal ovaries from 14 day post coitus ( 14 dpc ) mouse were cultured, and treated by ay9944 - a - 7, nystatin and rs - 21745. the results showed that 0. 025, 0. 0625 and 0. 125 um ay9944 - a - 7 or 25, 50 and 75 iu / ml nystatin increased the total number of follicles per ovary significantly ; however, ay9944 - a - 7 and nystatin at the same doses could n ' t cause the same effect on the number of growing follicles and the average diameter of five largest follicles per ovary. 50 u. m rs - 21745 decreased the total number of follicles, the number of growing follicles and diameter of follicles per ovary significantly after 48 h

    首先利用小鼠胚胎卵巢的體外無血清培養模型,培養妊娠14天( 14daypost - coitus , 14dpc )小鼠胚胎卵巢,分別添加能促進mas積累的ay9944 ,制黴菌素,和能抑制mas產生的rs - 21745進行處理,結果表明: 0 . 025 、 0 . 0625利0 . 125 m的ay9944 - a - 7與25 、 50和75iu ml的制黴菌素能顯著提高卵巢中形成卵泡的總數量,但是對生長卵泡數和卵泡直徑的作用不同;而mas合成抑制劑rs - 21745能夠顯著降低形成卵泡的總數量。
  2. When soil antecedent condition is dry and the initial rainfall intensity is high, peak surface runoff also considerably lag behind that of rainfall, because of the formation of temporary relative impermeable top layer ; b ) surface runoff is controlled primarily by infiltration - excess runoff mechanism under unsaturated condition ; the major fraction of surface runoff are dominated by saturated infiltration - excess runoff response, only a small fraction by return flow mechanism when soil is saturated ; c ) subsurface flow is dominated by saturated runoff mechanism, and the duration of subsurface post the rainfall end is dependent upon rather the soil properties than the rainfall characteristics ; d ) subsurface flow intensity in cultivated soil layer ( 0 ~ 20cm ) is high up to 35mm / h when rainfall intensity is up to 120mm / h, indicating the existing of macropores and pipe flow in cultivated layer

    2 )耕作制下紫色土的產流主要機制是: 1 )當雨前土壤含水量未達到飽和狀態時,表面產流起始時間有明顯滯后現象,這與紫色土的快吸水性和較多非毛管孔隙密切相關;當雨前土壤較乾燥,降雨初期雨強較大時,易形成臨時相對不透水表層,表面產流峰也有明顯滯后現象。 2 )表面徑流的產流方式主要是超滲產流,當土壤達到飽和狀態后,有四川大學博士學位論文小部分回歸流發生,但主要是飽和超滲產流發生,因為紫色土的相對不透水層和其它透水障礙層不明顯。 3 )壤中流主要是飽和產流,與降雨過程有明顯的滯后,而且雨停后的壤中流產流歷時與降雨特徵無關。
  3. The elicitor of this pathway is ca2 +, ca2 + binds to sos3, which leads to interaction with sos2, a ser / thr protein kinase of 446 amino acids, and activated the kinase. the transcription and post - transcription of sosl, an putative na + / h + antiporter on the membrane is controlled by the sos3 - sos2 complex

    這條途徑的起始為外界高鹽刺激使細胞內ca ~ ( 2 + )水平發生變化, ca ~ ( 2 + )作為第二信使與sos3結合,然後導致sos3與sos2相互作用激活sos2的激酶活性,形成sos2 - sos3激酶復合體。
  4. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面:首次採用硅( 100 )襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子,通過退火處理成功制備了sige - oi新結構,即sige - simox工藝,證實了以45kev注入3 10 ~ ( 17 ) 7cm ~ ( - 2 )劑量的氧離子,隨后在氧化層的保護下經1250 , ar + 5 o _ 2氣氛的高溫退火( 5小時)過程,可以制備出sige - oi新型材料;實驗中觀察到退火過程中的ge損失現象,分析了其原因是ge揮發( ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛)和ge擴散( ge穿過離子注入形成的氧化埋層而進入si襯底中) ,其中ge擴散是主要原因;根據實驗結果及實驗中出現的問題,對下一步工作提出兩個改進的方案:一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路,二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分,從而部分解決sige
  5. H & j medinfor consultant ltdis dedicated to provide professional services in clinical trials and post - marketing surveillance study ; marketing research in pharmaceutical industry and other related services / consultations for pharmaceutical company

    翰博瑞強醫藥信息咨詢有限公司致力於為醫藥企業提供專業的醫學臨床研究、醫藥市場調研以及其它醫藥市場相關的專業服務。公司設有臨床研究部、市場策劃及調研部、專業培訓部。
  6. Hal22 was transcribed as a polyadenylated transcript from 8 h post infection of h. armigera insect cells onwards

    轉錄時相顯示ha122從感染后8小時開始轉錄成一個添加多聚a尾的轉錄產物,一直延續到感染后72小時。
  7. Hongkong post issued a set of " 150 years of water supply in hong kong " special stamps today. mr. allan chiang ( left ), acting postmaster general, and mr. h. b. phillipson ( right ), director of water supplies officiated at the ceremony held at tamar basin to mark the launch of the new stamps

    在添馬艦場內舉行的"香港供水一百五十年"特別郵票發行儀式上,署理香港郵政署長蔣任宏先生(左)與水務署署長傅立新先生(右)一同主禮。
  8. 3. a ~ vaveguide h - t coupler with a large aperture and an inductive post is analyzed where the magnetic current distribution is assumed on the aperture and the current on the surface of the post

    將窗口等效為等效磁流源,而把匹配圓棒等效為電流源來處理,分析計算了這種耦合器的耦合特性。
  9. The results indicates that superconducting mgb2 thin films can be prepared by hfcvd in a single - step with the maximum critical transition temperature tc of 36k ; the best critical transition temperature tc of thin films grown by hpcvd in a single - step is 34k. the optimal zero resistance temperature tco of thin films fabricated ex situ is 37 k by post - annealing of precursor b film at 800 for 1 h under high mg vapor pressure

    實驗結果表明,用hfcvd法在400原位制備了臨界溫度為36k的mgb2超導薄膜;用hpcvd法在700原位制備了臨界溫度為34k的mgb2超導薄膜;將300制備的前驅物b膜在mg蒸氣中800保溫1h非原位退火,制備了臨界溫度為37k的mgb2超導薄膜。
  10. The competition was organised by hongkong post, with the education department as co - organiser and the commercial press ( h. k. ) ltd. as a sponsor. the competition aimed at promoting philately among students and offering young collectors the opportunity of producing exhibits for participation in international philatelic competitions

    是次比賽由香港郵政主辦、教育署協辦,並獲商務印書館慷慨贊助;旨在向學生推廣集郵活動,以及為年輕集郵家提供比賽機會,讓他們可以從中觀摩切磋,藉以提升郵集製作水平至合乎國際比賽的要求。
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