heat etching 中文意思是什麼
heat etching
解釋
熱侵蝕-
The silicon plates are formed reverse four wimble array in koh solution by wet - etching technology. then the electrochemical etching experiments are done in three poles electrobath. and some technology questions such as heat oxygenation, light etching, wet etching and electrochemical etching have been analyzed. at the same time sample appearances are analyzed by scanning electron microscope. according to current burst model theory, the electrochemical deep holes etching mechanism are analyzed
在三極電解槽中，進行了電化學深刻蝕的探索性實驗。對氧化、光刻、濕法刻蝕和電化學刻蝕中的工藝問題進行了初步的理論和實驗研究，同時，採用sem對實驗樣品進行了形貌分析，並採用電流突破模型對電化學深孔刻蝕機理進行了理論分析。 -
The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed
本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。 -
P - type silicon crystal plates have been adopted in the text, which are formed mask sio2 by heat - oxygenation. and figures are diverted by normal light etching technology
本文採用p型單晶矽片，由熱氧化形成sio _ 2掩膜層，標準光刻工藝進行圖形轉移，用koh溶液濕法刻蝕製作倒四棱錐腐蝕坑列陣。 -
The work mainly consists of four parts : the first part is to use oxidation and lpcvd technique to produce sio2 mask film and si3n4 insulation film in order to enhance the heating efficiency of micro chamber, and guarantee the carry out of the reaction. the second part is to use the combination of dry etching and wet etching to produce reaction micro chamber, it is the container which carry out the pcr reaction, and dna sample carry out amplification reaction here. the third part is to use the sputtering, photolithography to produce heaters and temperature sensors which heat the reaction micro chamber and provide the temperature condition for the pcr reaction
首先，利用氧化工藝和lpcvd技術，生長sio _ 2掩膜層和si _ 3n _ 4絕緣層，以提高反應腔的熱效率，保證擴增反應的順利進行；其次，用濕法腐蝕和干法刻蝕相結合的方法加工微型腔體，使之作為dna樣品進行pcr擴增反應的容器；第三，用濺射、光刻等工藝在微型腔體底部製作微型加熱器和溫度傳感器，實現對反應腔體的加熱及其溫度的精確測量，提供pcr擴增反應所需的溫度條件。
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