heavily doped diode 中文意思是什麼
heavily doped diode
解釋
高摻雜二極體-
The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0. 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios
在這個異質結中, n型重摻雜3c - sic層的厚度為1 m , p型輕摻雜sicge層厚度為0 . 4 m ,二者之間形成突變異質結。
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