heteroepitaxy 中文意思是什麼
heteroepitaxy
解釋
異質外延-
The theoretical calculation and explanation of strain behavior during heteroepitaxy of oxides thin films : when the lattice mismatch is relative small ( for example, batio _ 3 / srtio _ 3 with a lattice mismatch of 2. 18 % ), the growth mode of thin films is layer - by - layer, and the critical thickness and strain relaxation can be calculated or estimated by matthews - blakeslee expressions ; when the lattice mismatch is large ( for example mgo / srtio _ 3 with lattice mismatch of 8 % ), the strain relaxation process can be explained by theory of coherent strained islands
氧化物薄膜異質外延應變行為的理論預測和解釋。對于晶格失配較小的外延體系（如batio3 / srtio _ 3 2 . 18 % ） ，薄膜以層狀方式進行生長，臨界厚度和應變釋放過程可以用經典的matthews - blakeslee公式進行預測;對于晶格失配較大的體系（如mgo / srtio _ 3 8 % ） ，薄膜以島狀方式進行生長，應變釋放過程可以由彈性應變島的理論體系進行解釋。 -
This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy, which has the capability for improving device structure and characteristics
這種技術解決了外延生長難以解決的晶格失配問題，為改善器件結構及性能提供了巨大的潛力。 -
By using theoretical calculation and rheed monitoring, the strain behavior in heteroepitaxy of ferroelectric oxides thin films was designed and controlled experimentally
通過理論預測和rheed的檢測，控制氧化物薄膜生長，特別是控制鐵電氧化物薄膜生長中的應變行為。
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