heterostructure 中文意思是什麼
heterostructure
解釋
異晶結構-
Development of such distributed feedback heterostructure lasers requires crystal growth on corrugated layers.
研製這種分佈反饋雙異質結構激光器要求在皺折層上生長出單晶層。 -
Algan gan heterostructure field effect transistor materials grown by molecular beam epitaxy
生長的跨導為186 -
The structurally perfect and high - quality ba0. 5sr0. 5tio3 single - crystalline thin films were prepared on laalo3 and mgo substrates by pulsed laser depositioa the ba0. 1sr0. 9tio3 / yba2cu3o7 - heterostructure films were fabricated by pulsed laser deposition on a vicinal laalo3 su bstrates
詳盡地分析這些薄膜的衍射圖樣可知，薄膜都是以外延特性生長的而且晶體質量良好，但薄膜生長模式及表面平整度受沉積條件影響較大。 -
The bandgap of the double heterostructure was only 0. 86μm, yet up to 1ma of photo-current was detected.
雙異質結的帶隙僅為086m，迄今探測到的光電達1mA。 -
According to our theoretic analysis and the realistic fabricating condition, the boa device with double - heterostructure gaas / gaalas has been proposed to obtain 3db bandwidth greater than 2. 5 ghz, half - wave voltage about 5v, extinction - ration less than - 40db, transmission loss of tm mode greater than 45db and transmission of te mode less than 0. 15db. to obtain higher switching speed, we proposed that traveling - wave electrode is applied to boa device
我們選擇在sigaas襯底上生長重摻雜層，通過控制其厚度來設計速度匹配的boa光開關行波電極，實現boa光開關的高速和高帶寬，本文結合boa型光開關的特點提出一種行波電極型boa光開關結構，其理論3db調制帶寬大於20ghz 。 -
Laser diodes ( contd. ) : in - plane lasers : double heterostructure, quantum well, multi - contact, surface emitting
平面雷射：雙異質結構，量子井，多重電極，面發射。 -
Laser diodes : feedback and stimulated emission. cavity design ; double heterostructure concept. quantum well, wire, dot active regions. strained layers ; pseudomorphic active regions
回饋與受激放射。共振腔設計，雙異質結構之概念，量子井、量子線與量子點之主動層。應變層，假晶材料之主動層。 -
The optical switch with double - heterostructure gaas / gaalas has low switching - voltage and light loss. and the boa - type optical switch utilizes maximum modal dispersion ( a p ), does not require a specific fabrication length or length range to operate, has simple structure, and can exhibit very high extinction - ration from its two output ports ; so it is suitable for a 2 x 2 unit of optical switch array
而boa型結構（或稱為零間隙定向耦合型）光開關利用了最大的模色散（ ） ，不需要嚴格控制特殊的製造長度或製造范圍，結構簡單，從其兩個輸出端可以得到很高的消光比，是一種很好的2 2波導型光開關單元，同時也是光開關陣列的一種較好的選擇。 -
Ptpd alq3 heterostructure electroluminescent diode and its stability
3異質結電致發光二極體及其穩定性 -
Sige si heterostructure optoelectronic devices
異質結光電器件 -
The bandgap properties of one dimension heterostructure photonic crystal
異質結構光子晶體的能帶特性研究 -
Analysis on band gap of two - dimensional photonic crystals with heterostructure
二維光子晶體異質結構的帶隙分析 -
Information query method and tactic for tpi heterostructure uniform index system
異構統一檢索系統的信息檢索方法與策略 -
Structure and photoluminescence properties of heterostructure sic si prepared by mevva ion implantation at room temperature
異質結構及其室溫的光致發光特性 -
In this dissertation, the boa device with high extinction - ration, low drive - voltage, high - speed switch and insensitive to wide range of light wavelength, has been developed on double - heterostructure gaas / gaaias
本研究就是在gaas gaalas雙異質結材料上設計高消光比，低驅動電壓，高速度，較寬范圍工作波長不敏感的高性能boa光開關。 -
In this dissertation, a boa - type waveguide optic switch with double - heterostructure gaas / gaalas has been researched. gaas - based integrated optical devices have good temperature, good anti - radiation and optical - transmission characteristics, and also have wide transparent range of wavelength. they can also be integrated on a chip with optical active devices and electronic devices, such as semiconductor laser, optical modulation, optical amplifier, pin, and so on
基於gaas材料的集成光學器件不僅具有良好的光傳輸特性、溫度特性、抗輻射能力和其較寬的透明波長范圍，還有望進一步實現晶元與光源、光調制器、光探測器和半導體光放大器等其它光電器件以及集成電路的單片集成；採用gaas gaalas雙異質結材料製作的光開關可以得到較低的開關電壓，而且採用gaas gaalas異質結材料的光傳輸損耗很小。 -
Two - dimensional photonic crystals with heterostructure is proposed. its band gap was calculated by the finite difference time domain method. the numerical analysis showed that the band gap is enlarged
摘要提出異質結構的二維光子晶體模型，用時域有限差分法計算其帶隙，數值計算結果表明，其帶隙寬度變大。
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