high temperature annealing 中文意思是什麼

high temperature annealing 解釋
高溫退火
  • high : adj 1 高的〈指物，形容人的身高用 tall〉；高處的；高地的。2 高級的，高等的，高位的，重要的。3 高尚...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • annealing : 熱處理
  1. In our experiment, the specific fragment was amplified from transgenic bobwhite genome dna at annealing temperature 61 by using high - fidelity pfu dna polymerase and cloned into clone vector pgem - 7fz ( + ), then sequenced. the cloned sequence was completely identical to the sequence which was issued in genbank

    本實驗採用了高保真pfudna聚合酶，在退火溫度61條件下從轉基因bobwhite品種基因組dna中擴增出特異性片段，將此片段插入克隆載體pgem - 7fz （ + ） ，經測序和序列分析表明，所擴增得到的片段含有bar基因完整的讀碼框，並且序列與genbank中發表的序列完全一致。
  2. It is verified that the high temperature in rtp can efficiently dissolve the existing oxygen precipitates, indicating that the annealing temperature other than time is the determinative factor for the dissolution of oxygen precipitates

    研究證實：高溫快速熱處理可以顯著地消融氧沈澱，氧沈澱消融的決定性因素是熱處理溫度。
  3. Li lines related to di - center, which can be observed in all sic polytypes after various kinds of particle bombardments or irradiations and can withstand high - temperature annealing up to 1700 ?, were observed with the samples after postannealing above 700 ?

    在700溫度退火后的樣品中觀察到d _ i - center ，該中心在幅照或粒子轟擊后的sic的各種多型體中都觀察到，並能經受高達1700溫度的退火。
  4. The properties of lacamno3 films were enhanced dramatically with a post annealing treatment in high temperature and high oxygen pressure. the films show the highest so far tmi, which reaches the 300k, the transition of resistivity is kept in a narrow temperature range and the temperature coefficient of resistance ( tcr ) is about 5 - 8 %

    以高溫、高氧壓的條件對薄膜進行後退火處理，薄膜性質得到極大改善，轉變溫度點提高到了300k ，電阻?溫度系數也達到了5 - 8 ，不僅提高了轉變溫度點，而且使轉變保持在一個較窄的溫度區間內。
  5. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  6. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  7. The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried

    採用等溫退火法（或稱「一步法」 ）沉積ceo _ 2 ，即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜，再在與沉積溫度相同的溫度下對薄膜進行退火處理，系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。
  8. Foam glass is a new kind of inorganic heat insulating material with a structure of equally closed cells. it is mainly made of glass added with adequate foaming agents after heating and baking in high - temperature tunnel furnace, then annealing and cooling

    泡沫玻璃是一種以玻璃為主要原料，摻入適量發泡劑，通過高溫遂道窯爐加熱焙燒和退火冷卻加工處理后制得，具有均勻的獨立密閉氣隙結構的新型無機絕熱材料。
  9. 5. after high temperature annealing the hardness of the composites did not reduced obviously until 973k, this temperature greatly exceeds that of pure copper ( after cold machining, the temperature is 423k )

    本文制備的材料經高溫退火后的硬度明顯降低溫度點為973k ，大大超過了純銅（冷加工態）的423k ，而且熱穩定性能較好。
  10. The variation principle of wave velocity in different microstructures of 40cr is similar with that of 38crmoal. the velocity in quenching and low temperature tempering structure of gcrlssimn is much lower than the velocity in normalizing, annealing and high temperature tempering structure

    Gcr15simn鋼淬火+低溫回火組織的c _ 1遠大於正火、退火及淬火+高溫回火組織的c _ 1 ；正火、退火及淬火+高溫回火組織的c _ 1比較接近。
  11. The effect of high temperature in rapid thermal process ( rtp ) on the dissolution of oxygen precipitate generated by two - step ( low - high ) annealing is investigated

    摘要通過對已經過兩步（低高）退火的大直徑直拉矽單晶片進行高溫快速熱處理，研究矽中氧沈澱被高溫快速熱處理消融的情況。
  12. S. the composite prepared has excellent heat stability and high - temperature property. during the course of high temperature annealing, the hardness of the composite does not reduce obviously until 973k, while the temperature of pure copper ( after cold machining ) is 423k in the same conditions

    制備的cr _ 2o _ 3 cu復合材料具有良好的熱穩定性及高溫性能，在高溫退火處理過程中，硬度顯著降低點的溫度為973k ，大大高於純銅的硬度降低點。
  13. An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing

    我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。
  14. Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness

    獨特設計的氮氣氛退火及分步退火實驗證明了原注入樣品的缺陷層中氫及氫致缺陷的存在使得在退火過程中加速外界氣氛中的氧擴散進來，並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長，加速了高溫退火中的內部熱氧化過程，從而形成了比傳統相同劑量simoxsoi厚得多的氧化埋層。
  15. As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence

    這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加，同時pl強度在l戶800有一個大的增強。這個結果提示我們，界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。
  16. 2. heating treatment : 1300065002580mm annealing furnace max furnace is 120t, the high temperature is 11500c, 620023001500mm hardening furnace, 11005000mm line - frequency hardening machine tool

    2熱外理： 1300065003580mm退火爐最大裝入量120t最高爐溫11500c 620023001500mm淬火爐11005000mm工頻淬火機床。
  17. Ptmn has practically been used as anti - ferromagnetic layer to pin ferromagnetic layers because of its large exchange bias, high blocking temperature and excellent thermal stability. on the other hand, ptmn films deposited by magnetron sputtering without substrate heating require a relatively high temperature post - deposition annealing in magnetic field to induce a unidirectional exchange field hes

    由於ptmn反鐵磁材料具有大的交換偏置，比較高的blocking溫度和較好的熱穩定性，在自旋閥結構中ptmn已經在實際應用上用來釘扎鐵磁層。
  18. The samples annealed at high temperature exhibit intense green emission, but the spatial distributions of the band edge luminescence and the green emission are not completely complementary as the annealing temperature is increased

    經高溫處理的納米晶zno粉體，綠帶增強，紫外與綠帶譜的空間分佈並非是完全互補的。
  19. That is a hydrolysis procedure of inorganic salts followed by high - temperature annealing process

    這是一個無機鹽水解和高溫退火的過程。
  20. Ito films with low sheet resistance can be obtained by raising the substrate temperature during deposition or annealing in the inert gases at high temperature

    低電阻率的ito膜可以通過提高沉積時的襯底溫度或高溫退火來獲得。
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