high voltage transistor 中文意思是什麼

high voltage transistor 解釋
高壓晶體管
  • high : adj 1 高的〈指物，形容人的身高用 tall〉；高處的；高地的。2 高級的，高等的，高位的，重要的。3 高尚...
  • voltage : n. 【電學】電壓，電壓量，伏特數。 the working voltage （電氣的）耐壓限度。
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. The key parts of barretter are made of irf840 field - effect transistor, the magnetic ring and high frequency choking coil which adopting negative temperature index. such components can provide barretters a wide applicable voltage 160v - 250v. low power consumption, minor temperature rise, stable functions, long life - span

    鎮流器核心元件採用irf840場效應三極體，磁環及高頻扼流圈採用負溫系數，這樣的元件選擇使整流器適用電壓范圍寬160v - 250v ，功耗低，溫升小，性能十分穩定，確保其擁有很長的壽命。
  2. After constructing a 35 - nanometer - high channel between two silica plates and filling it with potassium chloride saltwater, they demonstrated that voltage applied across this nanofluidic transistor could switch potassium ion flow on and off

    他們在兩片硅板之間製作35奈米高的通道，注入氯化鉀溶液，示範在這個奈米流體晶體管上施加的電壓可開啟或阻斷鉀離子流。
  3. With the development of doping technology, the formation of the base region in high - voltage transistor can be made by b diffusion technology, b - a1 paste - layer diffusion technology, close - tube ga - diffusion technology and open - tube gallium - diffusion technology

    隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁塗層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。
  4. The two - transistor forward converter has many advantages, especially its low voltage stress, each power switches need to block only input voltage, so it is widely used in high voltage input application

    雙管正激變換器有很多優點，特別是在電壓應力方面，變換器中的兩個開關器件只需承受輸入電壓，因而在高壓輸入的場合得到了廣泛的應用。
  5. Compared with full - bridge or half - bridge converter, a two - transistor forward converter has no risk of direct break - through in the two transistors of the same leg, it is suitable for high voltage input high power output application

    另外，和全橋變換器或是半橋變換器相比，交錯並聯雙管正激變換器不存在橋臂直通的缺陷，因而比較可靠。因此，它適合於高壓輸入大功率輸出的應用場合。
  6. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  7. To compare with transistor ( complete solid - state ) high - frequency linear power amplifier, there are some disadvantages : bad stability and reliability, low efficiency, high cost for operating, huge cabinet, heavy maintenance work load, low security for high - voltage electricity offering, and to ensure the continuance of tv program, the transmitter must be operating with main frame and spare frame

    它們與晶體管（全固態）高頻線性功率放大器相比，存在著穩定性及可靠性差、效率低、運行費用高、發射機體積大、日常維護工作量大、高壓供電不安全、必須採用主機和備機的運行方式來確保電視節目不停播等缺點。
  8. Semiconductor discrete device. detail specification for type 3dk406 high - voltage and power switching transistor

    半導體分立器件. 3dk406型高壓功率開關晶體管詳細規范
  9. Semiconductor discrete device. detail specification for type 3dk6547 high - voltage and power switching transistor

    半導體分立器件. 3dk6547型高壓功率開關晶體管詳細規范
  10. In this paper, a phase shifting pulse width modulated ( pwm ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi - conductor device - insulated gate bipolar transistor ( igbt )

    本文採用最新的逆變思想與新型的開關器件?絕緣柵型雙極晶體管（ igbt ） ，研製出了移相式pwm軟開關高壓逆變電源。逆變技術發展至今，已經逐漸向大功率方向發展。
  11. Serial - parallel combined two - transistor forward converter is presented for high input voltage and high power application, and the operation principle of the topology is analyzed in this paper. all switches are turned off with zero voltage switching, and the two switches of them are turned on with zero current and zero voltage switching. the difference of input capacitances, conducting voltage drop of switches, duty cycle and windings of the transformer of the combined converter influences the voltage balance of the input capacitors

    本文介紹了雙管正激變換器的兩種穩定工作狀態，詳細分析了帶lcd無損箝位網路的並?並組合式雙管正激變換器的工作原理，該組合式變換器中的開關管實現了零電壓關斷，並介紹了該電路拓撲的特點和lcd網路參數設計，採用pspice軟體進行了模擬和分析，最後，研製出一臺2 . 3kw樣機。
  12. Because of many attractive characteristics, such as low switch voltage stress, inherent anti - break - through capability, high reliability, two - transistor forward converter ( ttfc ) has become one of the most widely used topology

    雙管正激變換器具有開關電壓應力低、內在抗橋臂直通能力和可靠性高等優點，已成為目前比較廣泛應用的拓撲之一。
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