hydrogen transfer 中文意思是什麼
hydrogen transfer
解釋
氫傳遞-
For example, poly ( xylylviologendibromide ) and 4, 5 - bis ( 4 - methoxyphenyl ) - 2 - ( 4 - nitro - pheny ) imidazolium acetate di - hydrate ( c23h20n3o4 + c2h3o2 - 2h2o ), the hydration or dehydration of the crystal structure is related to the color charge of the crystal. the thermochromic schiff bases are the other family of compounds that show a self - isomerization induced by an intramolecular proton transfer from the hydroxyl oxygen to the imine nitrogen through the o - h. . n hydrogen bond, and they were observed thermochromism
利用液相法合成了兩種具有熱色性新的有機水合物， x射線單晶衍射確定了這兩種水合物的結構，利用uv 、 ir 、原位升溫紅外、原位升溫紫外、 tg - dsc探討了它們的變色機理。 -
In the third chapter of this dissertation, based on the physical and chemical properties of hydrogen and the combustion characteristics of hydrogen, the quasi - dimension combustion calculation model of hydrogen ? fueled engine is set up through analyzing the characteristics of turbulence flame and chemical reaction kinetic of hydrogen ? air mixture. the model includes the dual ? area thermodynamics sub - model, quasi - dimensional turbulent entrainment combustion sub ? model, turbulence flame promulgating sub ? model, hydrogen - air mixture chemical kinetic sub - model and loss of heat transfer sub - model and so on
本文從氫燃料的物化特性和燃燒特徵著手，通過分析氫空氣混合氣燃燒的湍流火焰結構和燃燒化學反應動力學，基於雙區燃燒模型，建立了包括雙區熱力學、準維湍流卷吸燃燒、湍流火焰傳播速度、氫空氣混合氣燃燒化學反應動力學以及傳熱損失等模塊的燃燒模型，並給出了相應的計算方法。 -
Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige -
Based on the analysis of the mass transfer of hydrogen ion, it was proved that the agitation operation was negative as to the improvement of sensitivity of the biosensor
本文還對h +的傳質過程進行了分析，結果表明攪拌過程會導致傳感器檢測靈敏度的降低。 -
Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing
經過薄膜後退火處理發現，氮化硅薄膜經熱處理后厚度降低，折射率升高，但溫度達到1000oc時折射率急劇降低；沉積氨化硅薄膜后400oc退火可以促進氫擴散，提高鈍化效果；超過400oc后氫開始逸失，晶體硅材料中的少子壽命急劇下降； rtp （快速熱處理）處理所導致氫的逸失比常規退火處理顯著。 -
The paper has analyzed the performances of heat transfer and flow in the heat exchanger, founded the one - dimension model for heat transfer and flow in the microchannel, fit the hydrogen state and thermodynamic equations in the range of heat exchanger status, analyzed the influence which were raised by inlet flow parameters and structure parameters on the parameters in microchannel at the stable status
本文分析了氫工質在熱交換器內的傳熱流動特性，建立了微通道內傳熱流動的一維模型，擬合了換熱器工況范圍內的氫工質的狀態和熱物性方程，分析了穩態工況下入口流動與結構參數對換熱器內參數分佈的影響。 -
Hydrogen transfer polymerization
氫轉移聚合
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