hydrogenic 中文意思是什麼

hydrogenic 解釋
水成的
  1. Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in - nitrides quantum dots

    族氮化物量子點中類氫施主雜質位置對束縛激子結合能的影響
  2. We creatively apply this way to the bounded polaron in the parabolic quantum well and get the analytical expressions of the ground state energy of an electron bound to a hydrogenic impurity in a parabolic quantum well in an electric field

    我們開創性的把它應用到處理有拋物線量子阱中的束縛極化子，得到了有外電場的量子阱中，類氫雜質中的電子基態能量的解析結果。
  3. Hydrogenic impurities in low dimensional semiconductor structures have been studied extensively. electric field applied perpendicularly to the layer of quantum wells can change the optical properties ( abstraction, reflection and photoluminesce - nce ) of semiconductor quantum well structures

    而在垂直於量子阱平面的方向外加電場可以顯著的改變半導體量子阱結構的光學性質（如吸收、反射、光致發光等） 。
  4. Scaling of hydrogenic impurity binding energy and virial theorem in semiconductor quantum wells and wires

    半導體量子阱和量子線中雜質束縛能的度規法則與維里定理
  5. In the past 20 years, hydrogenic impurities in low dimensional semiconductor structures have been studied extensively. impurities play an important role in the transport properties and optical properties of these structures

    自80年代以來，低維半導體材料中雜質態的各種性質引起了人們的廣泛關注，雜質對于材料中的電子輸運及光學性質都有重要影響。
  6. In this paper, based on the previous works, we study the quality of a hydrogenic impurity in gaas / gai - xalxas rectangular quantum wires in detail. using variational approach, we calculate the binding energy and the photoionization cross - section of the impurity in the system

    本文在前人工作的基礎上，詳細研究了矩形截面gaas ga _ （ 1 - x ） al _ xas （ x = 0 . 3 ）量子阱線中的類氫雜質體系的性質，採用變分技術計算了此體系的束縛能及其光致電離截面。
  7. In the first part, following ref [ 27 ], the expression of the envelop function is obtained. then, considering the dismatch of effective mass between the well and the barrier, using the variational approach, we calculate the binding energy of hydrogenic impurity

    在第一部分，我們按照文獻[ 27 ]中的方法，得到了包絡函數的表達式，並利用變分法計算了類氫雜質的束縛能，其中考慮了阱壘中電子有效質量的失配性。
  8. Weber et al have calculated the density of impurity and energy spectra of hydrogenic impurities in rectangular cross section qwws without considering the effects of external fields

    Weber等人在不考慮外場的情況下討論了矩形量子阱線中類氫雜質的dois和能譜。
  9. In the first part, the scaling rule for the hydrogenic impurity binding energy and the virial theorem value ( potential - to kinetic - energy ) in infinite quantum wells and quantum wires of rectangular cross - section with three different aspect ratios are studied through the variational method

    在第一部分，利用變分法計算了無限深gaas矩形量子線和量子阱中類氫雜質束縛能的度規法則和維里定理值。
  10. Schroedinger ' s equation in three dimensions : central potentials, and introduction to hydrogenic systems

    三維薛丁格方程式:中心位勢以及介紹類氫系統。
  11. In this paper, based on the previous works, we studied the properties of a hydrogenic impurity in the gaas / ga1 - xalxas rectangular single quantum wire in detail. using variational approach, the binding energy and the photoionization cross section of the impurity in the system are calculated

    本文在前人工作的基礎上，研究了方形截面gaas / ga _ （ 1 - x ） al _ xas量子線中類氫雜質體系的性質，採用變分技術計算了此體系的束縛能及其光致電離截面。
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