impurity semiconductor 中文意思是什麼

impurity semiconductor 解釋
雜質半導體
  • impurity : n. 〈常用 pl. 〉1. 不純,不潔。2. 下流,不道德,不貞節,雜質。
  • semiconductor : n. 【物理學】半導體。
  1. When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".

    當半導體中加入了施主感受主雜質,我們就說該物質「摻雜」了。
  2. The major research interest covers a broad range of topics concerned with the fundamental properties of shallow - levels in semiconductors and with impurity related issues of importance to semiconductor physics and technology, e. g., single and multiple donors and acceptors, shallow excited states of deep - level impurities, defect interaction on the atomic scale such as impurity - pair or complex formation

    主要研究方向涵括半導體物理與技術方面有關雜質之重要領域,例如施者與受者雜質、淺與深雜質、雜質能階、雜質光譜、雜質與雜質或缺陷相互間之交互作用,以及復合雜質之形成與特性等。
  3. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體( - al _ 2o _ 3 )不僅由於其色澤艷麗成為人們珍愛的名貴寶石,而且由於它具有的優異性能,被廣泛應用於電工、機械、激光器,光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料,用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料(禁帶寬度3 . 37ev ) ,現已發現具有室溫下受激發射特性,有可能實現室溫下半導體紫外發光。
  4. When the electrical characteristics are dictated by impurity atoms, the semiconductor is said to be extrinsic semiconductors

    如果半導體的電學性質歸因於其中的雜質原子,那麼它將被稱為雜質半導體。
  5. Owing to the exchange and interaction between electrons of based semiconductor gaas and magnetic impurity mn, this kind of material combines the functionality of semiconductors with that of magnetic compounds, which shows particular structural, electrical and magnetic properties. so this material is promising in the application

    由於這類材料中的基質半導體gaas與磁性雜質原子mn中電子之間的相互轉移及相互作用而使得這類材料兼有半導體及磁性化合物的特點,並在結構、電性質及磁性質等方面表現出一些獨特的性質,因而具有巨大的應用潛力。
  6. Scaling of hydrogenic impurity binding energy and virial theorem in semiconductor quantum wells and wires

    半導體量子阱和量子線中雜質束縛能的度規法則與維里定理
  7. In the past 20 years, impurity state in low dimensional semiconductor structures have been studied extensively. impurites play an important role in the transport properties and optical properties of these structures

    自80年代以來,低維半導體材料中雜質態的各種性質引起人們的廣泛關注,雜質對于材料中的電子輸運及光學性質都有重要影響。
  8. Testing of materials for semiconductor technology - determination of impurity content in silicon by infrared absorption - part 1 : oxygen

    半導體工藝材料檢驗.用紅外吸收法測量硅的雜質含量
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