incident energy 中文意思是什麼
incident energy
解釋
入射能-
Ii ) energies of the sputtered atoms vary mainly from several to several teens ev, with few atoms " energy relatively high ; the emitting positions of the sputtered atoms are close to the corresponding incident ions ( in the order of angstrom ) ; the sputtered atoms are emitted mainly normally, and few are slantways ; energy and angular distributions of sputtered atoms are influenced by the energies and incident directions of incident ions, but the angular distributions are not influenced by the incident energy very greatly
Ii ）濺射原子的能量一般集中在幾個到十幾個電子伏特的范圍內，在高能量區域也有所分佈，但數量很少;濺射原子的出射位置就在離子入射位置的附近（埃數量級） ;濺射原子的角度在垂直方向和斜射方向都有所分佈，但以垂直出射為主;濺射原子的能量、角度分佈受到了入射離子能量、角度的影響，但入射離子能量對濺射原子的出射角影響不大。 -
The electron range increases with decreasing atomic number and increasing incident beam energy e0.
電子射程隨著原子序數的減少和入射束能量E0的增加而增加。 -
In calculating, we found the equilibrium processes were dominative and the pre - equilibrium processes were subordinate for reaction processes of n + 112120sn at incident neutron energies below 20 mev. since the recoil effect is taken into account, the energy for whole reaction processes is balance
在計算中我們發現，對于反應n + ~ （ 112120 ） sn當入射中子能量小於20mev時，在整個反應過程中平衡態發射佔主要部分，而預平衡態發射只佔次要部分。 -
Combining the generating method of molecular reflective thermal velocities according to diffuse reflection model, an algorithm named as inverse temperature sampling ( its ) is developed, which enables to evaluate the molecular reflective characteristic temperature from the molecular incident energy and the boundary heat flux
在此基礎上，通過結合壁面漫反射模型下分子反射速度的抽樣方法，發展了一種從邊界熱流求得與壁面碰撞分子的平均反射特徵溫度的逆溫度抽樣演算法。 -
If the incident proton collides with a proton bound in a nucleus, the threshold energy is lower because the target proton is bound.
如果入射質子是與束縛在原子核內的質子相碰撞，那麼閾能會低一些，因為作為靶的質子是束縛著的。 -
Simulation calculation for the energy deposition profile and the transmission fraction of intense pulsed electron beam at various incident angles
不同入射角度下強流脈沖電子束能量沉積剖面和束流傳輸系數模擬計算 -
In the present works, a self - consistent model describing the dynamics of radio - frequency ( rf ) sheath was established. the effects of collisions on the rf sheath dynamics, distributions of ion energy and angle incident on the substrate and the etching profiles were investigated numerically
本文建立了一套自洽的碰撞射頻等離子體鞘層理論模型，系統地研究了碰撞效應對等離子體鞘層的物理特性、離子入射到基板上的能量分佈和角度分佈以及刻蝕剖面的影響。 -
In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask
在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。 -
The number of cascade particles changes according to the incident cosmic ray energy, observation height, etc
到達地面的簇射粒子數目會隨不同因素而改變，包括原初宇宙射線的能量、觀測高度等。 -
The results of simulations are : i ) energies of the incident ions to the target are determined mainly by the voltage across the cathode sheath, with a majority of ions " energy vary around the sheath voltage ; ions nearly normally bombard the target ; ions mainly locate above the sputtering holes because of the influence of the magnetic field, and the incident ions mainly come from the region ; the ions undergo several collisions during transportation, but that do n ' t matter much
主要模擬結果有： ? ）入射離子到達靶面時的能量主要受到了射頻輝光放電中陰極殼層西北工業大學碩士學位論文李陽平電壓的影響，大部分離子的入射能量在陰極殼層電壓值附近，離子濺射時接近於垂直入射;射頻輝光放電受到陰極磁場的影響，等離子體中的離子主要集中在靶面濺射坑的上方，且入射離子主要來自這個區域;入射離子在輸運過程中和背景氣體分子有少量的碰撞，但影響不太大。 -
Imev and the data in which the energy respectively is 166mev 139mev, 104mev, 90mev. on the basis of two wave functions and two optical potentials above mentioned, we have investigated a serie s of knockout reactions : through the comparing of two wave functions and two optical potentials, we find that two a cluster relative vave functions which contribute to the energy sharing results of the reaction sections are very well, especially for the ; that the received spectroscopic factors used vfm ( r ) are better than that used ; that the former not only suits to the elastic scatterings but also to the knockout reactions ; that the a cluster of knockout reactions are its local behaviors of surface. and we further testify that the distorted influences are not neglected if the incidence energies are not very high, but can be used the plane wave impulse approximate method and neglect the effects of the distorted influences if the incident energies are high enough
在利用上述的兩種束縛態波函數和兩種光學勢的基礎上，我們研究了一系列的敲出反應：通過對比兩種束縛態波函數和光學勢，我們得到的結論是：兩種束縛態波函數和光學勢對反應截面的能量分配譜的貢獻都比較好，但尤以波函數_ （ li ） （ r ）為佳；光學勢v _ （ clu ） + （ r ）得到的光譜因子比用woods - saxon勢v _ （ ws ） （ r ）的結果要好，它不僅能適用於彈性散射，且對敲出反應也能得出比較好的結果；集團的敲出反應是集團表面局域性的表現：在中低能的入射條件下，扭曲效應不能忽略，但入射能量較高時，扭曲效應影響較小，可以用平面波沖量近似的方法。 -
In the hipib strengthening experiments, samples of high - speed steel ( w6mo5cr4v2 ) were irradiated by abstract hipib ( cn + = 30 %, h + = 70 %, ion energy 250 kev, ion current density 60 - 180a / cm2, pulse duration 80 - 100 ns ). microstructure investigation and properties characterization of the treated hss samples were carried out to investigate the effect of current density and pulse number of incident hipib on the surface modification treatment. the physical mechanism of the hipib - solid interaction was established based on the experiments
在hipib轟擊材料表面方面，本文選擇成分由c ~ （ n + ） （ 30 ）和h ~ + （ 70 ）組成、加速電壓為250kv 、脈沖寬度為80 100ns的hipib對高速鋼（ w6mo5cr4v2 ）進行表面輻照處理，研究離子束流密度和脈沖次數對高速鋼微觀結構和宏觀性能的影響，探討了hipib與材料表面相互作用的物理機制。 -
The primary incident wave period has a minor effect on the long period oscillations in hwa - lien harbor, and the incident wave energy merely acts as an amplifier affecting the magnitude of the oscillations
顯示其發生機制中，波浪的主頻相關性不大，而波浪能量可能僅是增幅的作用；並非臺風波浪作用才會發生長周期振蕩。 -
The concepts for the long period oscillation improvement in hwa - lien harbor include destroying the wave field structure of the incident waves, reducing the incident wave energy, and dissipating the energy of long period wave in the harbor
至目前為止，有關花蓮港長周期振?多認為集中於?風作用時期，而改善的構想則大致有：破壞入射波的波場結構、削減入射波能、以及消散港內的長波能量。 -
The incident high - energy protons interact with the silicon material in the way that is approximate to the three unrelated mechanisms : nuclear scattering, electronic process and nuclear reaction
高能質子與硅材料的相互作用近似為核散射、電子阻止和核反應三個相互獨立的過程。 -
Nuclear scattering results in the displacement defects in material as well as the deflection of proton from its incident direction ; electronic stopping of protons acts as the most important factor in the degradation of incident proton energy, resulting in electronic effects such as single event upset
核散射是導致入射質子運動方向改變以及缺陷產生的主要因素，入射質子與核外電子云的作用是高能質子在材料中慢化的主要因素。核反應在宇宙高能質子引起的單粒子效應中有重要影響。 -
The electron range increases with decreasing atomic number and increasing incident beam energy e0
電子射程隨著原子序數的減少和入射束能量e0的增加而增加。 -
These experimental results show that < q12 > is independent of the dimuon mass and logitudinal momentum, and imply the scattering of the incident quark within the target nucleus. by means of the glauber model, the difference of the mean transverse momentum squared < qt2 > is studied for the dependence of the incident proton energy and nucleus. the theoretical results are in good agreement with the fnal e772 experimental data
本文利用多重散射的glauber模型，討論了入射夸克在原子核中傳播的多重散射效應，給出了兩個不同的核drell - yan過程產生的末態輕子對橫動量平方平均值的差值對入射粒子能量核靶核的依賴性關系，計算結果與e772組的實驗數據符合甚好。 -
The experiment was performed at the accelerator mass spectrometer ( ams ) beam line on hi - 13 tandem accelerator of ciae using the 64cu off - line rnb, so the beam can be analysed and identified by static deflection technique of ams. limited by the deflection capacity of the electrostatic analyser of ams, the maximum incident energy of 64cu beam had to be restricted to 80 mev in the coulex experiment of 64cu off - line rnb
實驗是在中國原子能科學研究院hil串列加速器加速器質譜（ ams ）管道上完成的，利用ams靜電偏轉技術來分析鑒別束流成份，但是受ams管道靜電分析器偏轉能力的限制，在離線放射性核束中最高只能使用入射能量為80mev的的cu束。 -
An important relationship among the mean incident energy, reflective energy and the wall boundary heat flux is obtained by statistically averaging the energy values of those molecules colliding with wall
通過對與邊界發生碰撞的分子進行統計平均，得到了分子反射能量與入射能量以及邊界熱流密度的關系式。
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