indirect band gap 中文意思是什麼

indirect band gap 解釋
非豎直帶隙
  • indirect : adj. 1. 間接的，第二手的；迂迴的；曲折的。2. 不直截了當的，不坦率的，不誠實的。adv. -ly ,-ness n.
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  • gap : n 1 （墻壁、籬笆等的）裂口，裂縫；豁口，缺口。 【軍事】突破口。2 （意見的）齟齬，分歧；隔閡，距離...
  1. Silicon ( si ) is the leading material of microelectronic devices, but the nature of indirect band gap of si hinders its applications in integrated optoelectronics. to develop si - based optoelectronic integration by coupling the mature technology of si microelectronic integration with si - based light - emitting material will essentially meet the increasing demand of the great progress in the information technology

    硅是微電子器件的主要材料，但硅的間接能隙特性嚴重製約了其在光電子領域的應用，如果能在硅基材料的基礎上制備發光材料，就可利用已有成熟的硅集成技術發展硅光電子集成，從而有可能完全改變信息技術的面貌。
  2. Bulk silicon, with indirect band gap of 1. 12 ev, does n ' t emit visible light at room temperature

    本體硅為間接禁帶半導體，且禁帶寬度比較窄（ 1 . 12ev ） ，在室溫下很難發可見光。
  3. The mechanism of the luminescence has been discussed. bulk silicon, with indirect band gap of 1. 12ev does n ' t emit light at room temperature

    本體硅為間接禁帶半導體，且禁帶寬度較窄，室溫下很難發光。
  4. The results show that the differences between the two composites are very large. although the micrograph of the ni nano - wire and the co nano - wire are nearly the same, as the metal composition increased, the absorption band - edge of the ni / aao composite is small red - shifted ( 13 run ), however, the absorption band - edge of the co / aao composite is strongly red - shifted ( 80 nm ). meanwhile, the ni / aao and co / aao composite exhibit the optical features of the semiconductor with indirect and direct band gap respectively

    或no組份比的增加， ni / aao吸收邊的紅移量僅約13nln ，而co / aao的吸收邊紅移量卻超過了80lun ，分析發現ni / aao復合體系具有間接帶隙半導體的光學特徵，而co從ao復合結構則具有直接帶隙半導體的光學特徵; 5 .實驗研究了a創aao納米有序陣列復合結構的光吸收特性，在其光吸收譜上出現了較強的ag表面等離子體振蕩吸收峰，隨ag沉積量的減少，吸收峰位發生紅移，且逐漸展寬
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