ion dose 中文意思是什麼

The distribution fractions of mutants with higher avermectin titer than the original had correlation with implantation dose. after ion implantation mutation there were many types of morphology of colony, we stdudied the relationship between the colony shape and the ability of yielding, found that gray and protuberant colony had the highest titer

離子注入后阿維鏈黴菌的菌落形態發生了很大的變化，其中灰色，邊緣整齊，中間突出有開裂的菌落和為灰色，邊緣波浪狀，中間突出有放射狀開裂的菌株產量較高。

During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。

With increasing implantation dose, the thickness of the box layer increases while that of the si over - layer decreases. the thickness of the si over - layer is dependent of the ion energy

通過調節注入能量可獲得所需要的不同表層硅厚度的soi結構材料，但為獲得高質量的soi材料，注入能量需要和注入劑量有合適的匹配。

The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。

Because heavy ion has the characters of high - let value and sharp bragg peak for dose distribution

因為重離子具有高傳能線密度（ let ）及劑量分佈呈尖布喇格峰的特點。

For instance, the dwarf character in the plants treated with the dose of 80 x1015 was stable in inheritance in consecutive three generations. thus it can be seen that low - energy ion implantation causes developmental state changes and phenotypic variations and some changes and variations can be inherited stably

以上結果充分顯示低能離子能夠引起生物體dna產生變異，從而導致表型的變異，是一種有效的誘變劑，表明離子柬生物技術是一種非常有效的物理誘變技術，在生產實際中具有廣泛的應用價值。

In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose

本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。

The authour investigate the dosing conditions and effect of the pac to the huanghe water - source, which includes the following four parts : the selection of the pac ; the confirmation of dosing scheme and effect of the pac ; the research of application of potassium permanganate in combination with pac ; the research of the pac ' s modification and the modified effectiveness. the experiment is mainly carried out on the pilot system in the jieyuan water plan of tianjin. the results of the reseach include the following : l ) the pac from zunhua plant is selected as the better carbon for the source water of tianjin through the experiment ; 2 ) through the pilot experiment we conclude that the pac ' s best adding point is the mixing tank and the better dose is 10mg / l, on which the codmn of filtered water can be decreased to 40 % and the effluent have no problem of odour and color ; 3the adsorbing experiment show that pac mainly adsorb the organic matters which molecular wt., distribution between 500 and 3000, and can adsorb organic matters whose molecular wt., distribution are bigger than 6000 if the dose of it is adequent ; 4 ) pac together with potassium permanganate can remove the organic matter more effectively than each of them alone, and reduce the rising trend of turbidity of the flotation ' s effluent due to adding pac ; 5 ) the thesis made a research on the surface properties and the adsorbing capability of the modified carbon by oxidizer : the modified carbon with 20 % h2o2 can remove more organic pollutants than the untreated one by 12 % when we add a higher dose of coagulant ; 6 ) the modification of reduction and loading metal ions are also sttldied, and drow the following conclusions : the modified carbon with 5 % ammonia can enhance the organic matter ' s removal effectiveness by 10 % to the tianjin source water than the untreated one, and the modified one with loading metal ion remove the organic matters from the tianjin source water better ( 8 % ) than the untreated one due to the strong affinity betwween the humic acid and copper ion

本文的實驗主要是在天津芥園水廠的中試系統上完成的，論文的成果和結論主要包括： 1 ）通過靜態實驗選定河北遵化活性炭廠生產的煤質炭為適合天津原水的炭種； 2 ）中試實驗確定粉末活性炭的較佳投加點為混合池投加，較佳投加量為10mg l ，此時可使濾后水的cod _ （ mn ）降低40 ，且可較好地控制濾后水的嗅味和色度； 3 ）初步確定粉末活性炭對原水中有機物的吸附主要集中在分子量在500 - 3000范圍內，投量增大時可吸附部分分子量大於6000的有機物4 ）中試實驗表明：粉末活性炭與高錳酸鉀聯用可取得較兩者單獨應用時對有機物更好的去除效果，且對因投加粉末活性炭而造成的氣浮出水濁度升高有一定的改善作用； 5 ）研究並初步確定氧化改性對粉末活性炭表面性質和有機物的去除效果的影響：粉末活性炭的氧化改性會使其表面的酸性官能團大量增強，表面極性增加；經20的過氧化氫改性的活性炭在增大混凝劑投加量（ fecl _ 3投量為15mg l ）時對有機物的總體去除效果較原活性炭提高12 ， 1次氯酸鈉改性活性炭對有機物的去除效果較原活性炭提高6 ； 6 ）研究並初步確定還原改性、負載金屬離子對原水中有機物的去除效果的影響：經5氨水改性的活性炭可提高天津源水中有機物的去除率達到10 ；負載銅離子后的活性炭可提高對腐殖酸類物質的去除能力，一般可提高8左右。

By means of the afm made in shanghai aijian co., ltd. and digital instruments co., ltd ( u. s. ), the dna strand and their fragments were observed successfully. 2. by comparison with afm experiments of three categories of ion beams, the result has been observed in qualitatively : in the uniform dose, the higher let heavy ions have caused more double strand breaks than the lower let radiation

通過afm對實驗結果的觀測，可以定性地得知：在同等劑量條件下，高let值的重粒子與低let的射線相比， dna雙鏈斷裂的數目要多一些；在相同let條件下，隨劑量增加dsb的片段變短、數量增加。

It would take several hundred days to reach such a high dose by using currently available proton and neutron sources, while only several hours to several ten hours by the energetic heavy ion irradiation

由於輻照劑量高，若用現有的質子或中子源進行輻照需要幾百天時間。採用重離子輻照模擬，僅需幾個小時至幾十個小時即可達到所需的輻照劑量，大大縮短分析測試周期。

In order to verify the reliability and validity of the heavy ion irradiation simulation of neutron and proton irradiations, radiation damage and its thermal annealing behavior in a - al2o3 irradiated at the equivalent dose by 85 mev 19f ions and by en > 1 mev neutrons, respectively, are studied

為驗證重離子模擬輻照的可行性，首先進行了等效劑量下的中子輻照與重離子輻照后- al _ 2o _ 3樣品中輻照損傷及其退火效應研究。

The expression of topoisomerase ii of cultured cells treated low dose ionizing radiation decreased and then returned as time went. and become outstanding as radiation dose and frequency were added. inhibitor of topoisomerase ii could cause chromosome non - dis juction in mitosis and meiosis. and the co - effect of inhibitor of topoisomerase ii and ion

05 ） ，具有隨照射次數增加而增加的趨勢；小劑量電離輻射可以引起拓撲異構酶a表達變化，隨照射后時間延長先下降后回升，隨照射劑量和次數的增加，變化更加明顯；拓撲異構酶11a抑制劑可引起有絲分裂和減數分裂時染色體的不分離；拓撲異構酶a抑制劑和電高輻射的協同作用使染色體不分離更加明顯。

This research has closed relationship with a wide range of cross - science areas, such as basic research on cancer therapy by heavy ion radiation method, radiation danger level evaluation in space and biological damage induced by long term, low - level dose radiation environment, etc. dna is the carrier of biological information and the main target of biological effects induced by ionizing radiations

從重離子治癌的基礎性和先導性的研究，載人航天飛行過程中的太空輻射危險性評估，到長期在低劑量輻照環境下的放射性對機體損傷等等，都與電離輻射所致生物損傷的研究有著密切的關系。 dna （脫氧核糖核酸）是生命信息的載體，也是輻射生物效應的最主要的靶分子。

Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。

Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation

附加電極半徑對空心圓管端點附近離子注入劑量的影響

The surface hardness variations of some kinds of polymers were compared and the influence factors such as ion species, particle energy and dose were analyzed

通過比較幾種不同類型的聚合物材料在注入前後表面硬度的變化，分析注入離子種類、注入能量、注入劑量等工藝參數對聚合物的影響。

An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing

我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。

The absorbed doses are obtained with a uniform state ion chamber that is formed with liftld cavity and lif wall and designed by ourselves. the key problem, the dose to fluence conversion factor of the photon with single energy from 0. 1 mev to 12mev, has been solved by simulating with monte carlo code system egs4

用m - c方法計算了固體電離室對0 . 1mev 12mev的單能光子的單位光子注量? lif吸收劑量的轉換因子，從而解決了由高能光子吸收劑量實測值轉換成光子注量時所面臨的困難問題。

Secondly, the observation of the arabidopsis thaliana seeds which were irradiated by the ion beam through the sem found that with the increase of the ion beam dose, the ion beam mechanical erosion degree of the seeds was deep. and there are many holes and gaps in the surface of the seeds in dose

通過掃描電鏡對離子注入后的擬南芥種子的觀察發現，經離子注入過的種子種皮有明顯的孔洞和裂痕，並且注入離子對干種子表皮的作用程度隨劑量的增大而加深。

In this paper, we used different doping means to prepare the mn - doped gaas material. firstly, we incorporated mn of different dose into gaas by ion implantation, including the couple - ion implantation with mn + and c, then performed rapid thermal annealing in different temperature. furthermore, we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion

本論文利用不同摻雜方法進行了摻mngaas這種dms材料樣品的制備，首先利用離子注入法對砷化鎵（ gaas ）材料進行不同劑量的錳（ mn ~ + ）離子注入，其中包括加碳（ c ）的雙離子注入，然後在不同溫度下進行快速退火處理；此外還利用擴散法對gaas晶片進行不同mn擴散源（純mn 、及mnas ）的摻雜。