irradiation rate 中文意思是什麼

irradiation rate 解釋
輻射率
  • irradiation : n. 1. 照耀；發光。2. 闡明，啟發。3. 【物理學】光滲，照光，輻照。4. 【醫學】照射。5. 擴散。
  • rate : n 1 比率，率；速度，進度；程度；（鐘的快慢）差率。2 價格；行市，行情；估價，評價；費，費用，運費...
  1. At the dose rate of 1 ~ 3 gy / min, their tolerant capacity were ranked from high to low as : one year dormant plant > dry dormant seed > one year shoot > wet cold - stratified seed, their irradiation dose were suggested as 75 - 100gy, 50 ~ 100gy, 30 ~ 50gy, 30 ~ 40gy, respectively

    在劑量率為1 3gy min時，按照耐受性由高到低依次是：一年生休眠植株休眠干種子一年生枝條解除休眠濕種子。它們的適宜輻射劑量分別是：一年生休眠植株， 75 100gy ；休眠干種子， 50 100gy ；一年生枝條， 30 50gy ；解除休眠濕種子， 30 40gy 。
  2. Increasing ultrasound intensity in the range of cavitation threshold and cavitation peak value, decreasing monomer concentration and increasing the temperature make the induction period shorter. under optimized reaction conditions, the conversion of ba can reach 90 % in 11 min at high n2 flow rate the viscosity average molecular weight of the obtained pba reaches 5. 24 106. the molecular weight of pba varies with ultrasonic irradiation time, indicating that the ultrasonic induced emulsion polymerization is dynamic and quite complicated, polymerization of monomer as well as degradation of polymer occurs concomitantly

    一、實現了無常規化學引發劑存在下的超聲輻照引發丙烯酸正丁酯（ ba ）間歇乳液聚合，制備了pba納米粒子，在11min內轉化率達到90 ，分子量達5 . 24 10 ~ 6 ，隨反應時間的延長而降低，表明超聲輻照引發乳液聚合是一個動態的復雜過程，單體的聚合和聚合物的降解同時發生。
  3. ( 2000 ). the neutron irradiation is assumed to derive primarily by the reaction 13c ( a, n ) i60 with a minor contribution from the marginal burning of 22ne through the channel 22ne ( a n ) 23mg in the final, high temprature phase of each flash. and we considered the influence of the various parameters such as the initial core mass, the envelope mass, the mass - loss rate, the overlap factor and the delution factor etc., and we vary their value with the pulse number

    本文採用分叉s -過程反應通道，以~ （ 13 ） c （ ， n ） ~ （ 16 ） o 、 ~ （ 22 ） ne （ ， n ） ~ （ 25 ） mg為雙脈沖中子源，用最新的中子俘獲截面，利用gallino和busso等人給出的agb星三殼層核合成模型，考慮到核心質量、挖掘程度、重疊因子、稀釋因子及星風質量損失率隨脈沖數的變化，詳細計算和研究了各個金屬豐度情況下的3m 。
  4. It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate

    模擬結果表明：退火過程所加柵偏壓的大小以及隧道電子效應與建立的界面態所佔比例的不同影響器件的恢復率。
  5. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  6. Survey on rate and dose of irradiation in the surrounding area of medical x - ray

    線外環境照射量率的調查
  7. Nitrogen dioxide and sulfur dioxide and formaldehyde, three kinds of common contaminating gases, were selected as treatment subject. the influence factors on the rate of photocatalytic degradation such as intensity of uv irradiation, humidity and initial mass concentration were investigated in detail

    實驗選擇比較常見的甲醛、二氧化硫、二氧化氮三種污染氣體為處理對象，主要考察了光強、濕度、初始濃度對其光催化降解速率的影響情況。
  8. Theoretical calculation model for dose rate distribution of 60co irradiation field and its application

    鈷源輻照裝置劑量場分佈的理論計算程序及應用
  9. When irradiation response and dose are linear, total dose radiation and post - irradiation annealing at room temperature are determined for one random by choosing absorbed dose rate, and total dose effect at other absorbed dose rate can be predicted by using linear system theory

    研究結果表明，輻射響應與吸收劑量成線性關系時，在實驗室選用任一特定劑量率進行總劑量輻射和輻照后室溫退火，可以通過線性響應理論模擬其它劑量率輻射下的總劑量效應。
  10. Because of the anatase ' s broad eg ( 3. 2ev ), the absorption thresholds correspond to 380nm for the tio2. consequently, only the ultraviolet fraction of the solar irradiation can be active in the photoexcitation processes using pure tio2 solid. the high recombination rate of charge carrier and low efficiency of quantization are also the deficiencies of pure tio2

    由於tio _ 2的帶隙較寬（約3 . 2ev ） ，半導體的光吸收波長范圍窄（主要在紫外區） ，故其太陽能的利用效率低，且還存在半導體載流子的復合率高，量子化效率低等缺陷。
  11. Moreover, the sio2 / tio2 composite thin film showed the lowest pl intensity due to a decrease in the recombination rate of photo - generated electrons and holes under uv light irradiation, which further confirmed the film with the highest photocatalytic activity at 700 c. when the calcination temperature was higher than 700 c, the decrease in photocatalytic activity was due to the formation of rutile and the sintering and growth of tio2 crystallites resulting in the decrease of surface area

    同時，此時sio _ 2 / tio _ 2復合薄膜的熒光光譜顯示最低的熒光強度，這表明此時薄膜中的光生電子和空穴的復合速率最低，因而更有利於物質的光催化降解。當熱處理溫度高於700時，武漢理工大學碩士學位論文薄膜的光催化活性下降，這是由於薄膜中晶相二氧化欽的燒結和成長導致樣品的表面積下降以及金紅石相的形成。
  12. The experimental results show that dlc film could be deposited on silicon substrate rapidly and uniformly in a large area by means of ablated plasma jet generating on the target surface during hipib irradiation, the instantaneous deposition rate is as high as imm / s and the uniform deposition area covered 40 - 50 cm2

    實驗結果表明，利用hipib燒蝕等離子體在si基體上可以實現快速、大面積、均勻地沉積類金剛石薄膜，薄膜的瞬時沉積速率達到1mm s ，均勻薄膜的面積達到40 ? 50cm ~ 2 。
  13. But different from bipolar transistors, some of them show that the lower the radiation dose rate was applied, the less the devices were damaged, and the damage induced by high dose rate irradiation can be eliminated by a long time anneling at room temperature

    有些電路雖有不同劑量率的輻照損傷差異，但這種差異可通過室溫退火得到消除，因而只是時間相關的效應。
  14. Besides, no distinct difference of the response between 60co y - ray irradiation and electron beam irradiation is found, nor energy and dose rate reliability

    此外，在本實驗范圍內未發現丙氨酸薄膜劑量計對射線和電子束的響應存在明顯的差異，同時未發現明顯的能量和劑量率依賴性。
分享友人
分享到 Line

分享到臉書