junction device 中文意思是什麼

junction device 解釋
接線裝置
  • junction : n. 1. 接合，連接，連絡。2. 接合點，交叉點，（河流的）匯合處，（鐵道的）聯軌點。3. 【電學】中繼線。4. 【物理學】接頭，結。
  • device : n. 1. 設計，計劃；方法，手段。2. 〈pl. 〉意志，慾望。3. 謀略，策略，詭計。4. 器具，器械，設備，裝置。5. 圖案，圖樣；花樣；紋章；標記，商標；（紋章上的）題銘。
  1. The jdf - 2 type case hanging basket guards against automatically falls mainly uses in the direct motor drive hoisting mechanical well type case hanging basket, as the type case hanging basket using of safekeeping of security, it installs in the hanging basket crossbeam both sides, along including guide rail is rising and falling, when the motor drive type case hanging basket in the fluctuation process, meets overweight, overspeed, steel wire attrition and other reasons creates the hoisting cable or the junction device snaps suddenly, when under hanging basket weightlessness falls, guards against falls can automatic brake, thus achieved avoids falling the basket to offend somebody

    Jdf - 2型井字架吊籃自動防墜器主要用於由電動機驅動的卷揚機井字架吊籃，作為井字架吊籃的安全保護之用，它安裝在吊籃橫梁的兩側，沿含著導軌升降，當由電動機驅動的井字架吊籃在升降過程中，遇超重超速鋼絲繩磨損等原因而造成提升鋼絲繩或連接裝置突然破斷，吊籃失重下墜時，防墜器能自動剎車，從而達到避免墜籃傷人重大事故發生的目的。
  2. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件，與普通的pn結二極體相比，它具有正向導通電壓低，響應速度快等優良特性。
  3. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  4. In the design of the device, a kind of junction termination technology, polysilicon field plate was introduced at the edge of source and drain of the device. it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points

    在器件設計過程中，在源端和漏端都採用了多晶場板技術，減小了表面pn結和nn +處的峰值電場，避免了器件在這兩處過早擊穿。
  5. The sensor operation speed can be 64ms / frame ~ 2ms / frame. in the research of photoelectric cell, device physics structure of pixels have been optimized. deep junction depth photodiodes, such as p + / n - well / p - sub structure, have been used and the photo - response of the sensor has been greatly enhanced

    復位信號為sv時的單幀感光動態范圍為60db ，採用改變復位信號頻率的二次掃描方式可將傳感器的總的感光動態范圍擴大到84db ，可對0石10 ， 000lx光照強度的信號進行傳感。
  6. Alloy - junction device

    合金結器件
  7. It is composed of thirteen functin ? components including two 3 - db y - junction power splitter, two directional couplers, two waveguide attenuators and one polarizer of waveguide itself. the prominent feature of the device is that it has a beat detection function with respect to the single y - branch mioc device, and it plays an important role in improving the inertial - grade and the high precision steady - aim system because of the beat detection function. farthermore it has direct influence on the improvement of the high flexibility, shockproof and overload - resistance for the steady - aim system

    器件的工作波長為1 . 3 m ，集分束器、合束器、起偏器/檢偏器、相位調制器、波導吸收器等十三個功能單元於一體，除了單y多功能集成光路器件具備的功能外，它還具有拍頻檢測功能，因而對提高慣導級和高精度穩瞄系統起著重要的作用，並直接影響著穩瞄系統的高機動性、抗沖擊力和過載能力的提高。
  8. This is because it relies on a superconducting device called a josephson junction to produce the qubits, in the form of specially tweaked electrons that are stable only at such low temperatures

    這是因為它依賴於一個名為約瑟夫森結的超導裝置產生量子比特，這種被特別扭曲的電子只有在低溫下才穩定。
  9. In the layout design of the power device, a circular structure was adopted to avoid the spherical junction and reduce the curvature effect

    該功率器件的版圖設計為圓形結構，避免了球面結的形成，有效的降低了曲率效應造成的電場集中。
  10. The superconducting josephson junction array oscillator is one of most potential research subjects in superconducting fields lately. it is of importance to research the device profoundly for designing high - tech novel superconducting device and equipment and improving the science and technique level in superconducting fields and national defense technique level

    超導約瑟夫森結陣列振蕩器是近年來國際超導研究領域中極為活躍的研究課題之一，對這種器件開展深入的研究對于發展高新技術新型超導器件及設備、增強超導研究領域的科學技術水平和國防技術水平都具有十分重要的意義。
  11. Comparing with p - n junction, sbd is a majority carrier device. it has low break - over voltage, and can be used at high frequency

    與p - n結相比，它是一種多子器件，具有正向導通電壓低，使用頻率高等特點。
  12. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ), a novel semiconductor device. this new device has shared the advantages of bjt and mos

    詳細分析了一種新型半導體器件? ?雙極壓控場效應晶體管（ bjmosfet ）的結構特點、工作原理，這種器件擁有bjt和mos兩者的優點。
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