k-electron 中文意思是什麼

k-electron 解釋
k層電子
  • k : (pl Ks K s; ks k s )1 英語字母表第十一字母。2 K字形物體[記號]。3 一個序列中的第十一〈若 J 略去...
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子(學)說。
  1. Z. zhang, m. wollgarten and k. urban, " analysis of dislocations in icosahedral al - cu - fe alloy by transmission electron microscopy ", phil. mag. lett., 61 ( 1990 ) 125 - 131

    「鋁銅鐵二十面體準晶中位錯的透射電子顯微學分析」 , , (英國)
  2. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多,其中溶膠?凝膠( sol - gel )方法可以和集成電路( ic )光刻工藝相互兼容,處理溫度低,有大面積塗敷性能,能精確地控制組分,無需復雜的真空設備,成本低廉,所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜( ito )襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射, sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度,結構和電學性能進行了測試。
  3. A series of experiments were conducted on the salivary gland of female haemaphysalis longicornis neumann, including salivary gland structure, protein concentration and components, na k - atpase activity, as well as their variation during different developmental stages, especially the effects of juvenile hormone analogue farnesol on the structure and secretion of salivary glands, by scanning electron microscope ( sem ), bradford method, sds - page, enzyme microanalysis, topical application etc. the present research will provide foundation for deeply investigations on the important organs in the future

    本文以廣泛分佈於我國的長角血蜱haemaphysalislongicornisneumann為研究對象,利用電鏡技術、 bradford法、 sds ? page和na ~ - 、 k ~ - - atpase活性微量檢測法等現代生物學技術對其唾液腺結構、蛋白含量和成分、 na ~ - 、 k ~ - ? atpase活性及其動態變化,特別是保幼激素類似物法尼醇對唾液腺結構與分泌活性的影響進行了較系統地研究,為深入開展蜱類唾液腺研究提供依據。
  4. If an electron with k state is initially in one miniband, elastic scattering will make the difference of the probability band occupation tend to zero. if electrons initially are located at a single wannier state, elastic scattering will make the difference of the probability band occupation tend to a constant which does not equal zero. the stable distribution in k space is just the same as the average distribution when no scattering

    發現彈性散射會破壞電子間的關聯,使得初始處在某一微帶上的態電子在兩微帶上的佔有幾率趨於一致;初始電子處在實空間的單個瓦尼爾態上時,最後在彈性散射的影響下兩帶佔有幾率差不為零,並且在上的穩定分佈和沒有散射時的平均分佈相同。
  5. Innovative designed k - alpha electron spectrometer

    電子能譜儀
  6. Using of g - csf / gm - csf can mobilize the cec / cep. the amount of cecs / ceps is correlated with the serum level of vegf > vcam - k 1cam - 1 > bfgf, which indicate that these cytokines are related to cec / cep mobilization. the ceps can differentiate into mature endothelial cells in vitro which is testified by electron microscope and immunohistochemistry

    經造血幹細胞動員( g - csf / gm - csf )后,外周血中cec / cep升高,證實生血因子在動員造血幹細胞的同時,對血管內皮干/祖細胞亦有動員作用。
  7. K electron conversion ratio k

    電子轉換系數
  8. Xps shows that the crystal has elements w, k, yb, o, gd from the data of electron energy level and binding energy

    因此,若想生長質量優良的晶體,應盡量減少生長過程中的溫度、濃度及生長速度的波動,保持晶體的穩態生長。
  9. Using the statistical regression model and the electronic industry corporation financial statements data. constructed our country electron industry short - term liquidity synthetic evaluation system, constructed the comprehensive financial risk coefficient of synthetic evaluation enterprise finance condition, and the computation has obtained our country electron industry synthesis finance risk coefficient standard value. using k - s statistics inspection procedure, calculated each appraisal target standard of our country electron industry short - term liquidity, through the actual examination, it is more remarkable to unifies the short - term liquidity and the synthesis finance risk coefficient to analyze enterprise the short - term liquidity, has more reality instruction value, can provide the quite scientific reference for our country electron industry company to analyze the short - term liquidity

    綜合考慮影響短期償債能力的各種因素,運用統計回歸模型和電子行業上市公司財務報表數據,構建了我國電子行業短期償債能力綜合評價體系,構造了綜合評價企業財務狀況的綜合財務風險系數,並計算得出了我國電子行業綜合財務風險系數的標準值;利用k - s統計檢驗方法,計算出了我國電子行業短期償債能力各評價指標的標準,通過實際檢驗可以看出,把綜合財務風險系數和短期償債能力評價指標結合起來分析企業的短期償債能力效果更顯著,更具現實指導價值,能為我國電子行業公司短期償債能力評價提供比較科學的參考。
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